摘要:
A structured abrasive article comprises an at least translucent film backing and an abrasive layer disposed on the backing. The abrasive layer comprises a plurality of shaped abrasive composites. The shaped abrasive composites comprise abrasive particles dispersed in a binder. The abrasive particles consist essentially of ceria particles having an average primary particle size of less than 100 nanometers. The binder comprises a polyether acid and a reaction product of components comprising a carboxylic(meth)acrylate and a poly(meth)acrylate, and, based on a total weight of the abrasive layer, the abrasive particles are present in an amount of at least 70 percent by weight. Methods of making and using the structured abrasive article are also disclosed.
摘要:
The present invention is directed to a method of modifying a wafer surface comprising providing a first abrasive article comprising a first three-dimensional fixed abrasive element and a first subpad generally coextensive with the first fixed abrasive element, contacting a surface of the first three-dimensional fixed abrasive element with a wafer surface, and relatively moving the first abrasive article and the wafer. The method additionally provides providing a second abrasive article comprising a second three-dimensional fixed abrasive element and a second subpad generally coextensive with the second fixed abrasive element, contacting a surface of the second three-dimensional fixed abrasive element with the wafer surface, and relatively moving the second abrasive article and the wafer. Wherein the first subpad has a deflection less than the deflection of the second subpad when measured 1.5 cm from the edge of a 1 kg weight, the weight having a contact area of 1.9 cm diameter.
摘要:
This invention pertains to a coated, bonded or non-woven abrasive article containing precisely shaped particles and a binder. These precisely shaped particles can contain abrasive grits, fillers, grinding aids and lubricants. The binder is preferably a mixture of a resole phenolic resin and a free radical curable resin, resulting in improved cutting and life span. Also disclosed is a method of forming the coated, bonded or non-woven abrasive article.
摘要:
An abrasive article including (i) an embossed isolation layer defining inversely contoured first and second surfaces with a plurality of peaks on the first surface producing a plurality of pockets on the second surface, (ii) grinding aid-containing protrusions positioned within the pockets, and (iii) a coating of abrasive particles adhered to the contoured first surface of the isolation layer.
摘要:
An abrasive article includes a support pad, a first abrasive element, a second abrasive element and a fixation mechanism. The support pad has a first major surface, a second major surface, a first edge, a second edge and a channel. The channel is formed within the first major surface and extends from the first edge to the second edge. The first and second abrasive elements are each positionable over a portion of the support pad. The fixation mechanism is positioned within the channel ad secures an edge of the first abrasive element and an edge of the second abrasive element to the support pad.
摘要:
The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.
摘要:
Structured fixed abrasive articles including a multiplicity of three-dimensional abrasive composites fixed to the abrasive article, the abrasive composites further including a multiplicity of ceria abrasive particles having a volume mean diameter from 100 to 500 nanometers (nm) in a matrix material, the matrix material further including a polymeric binder and a multiplicity of surface treated ceria filler particles having a volume mean diameter less than 100 nm. Also provided are methods of making and using structured fixed abrasive articles according to the disclosure.
摘要:
An abrasive article, and methods of making and using same, containing an inorganic metal orthophosphate salt. The abrasive article including a coated abrasive article having a size or supersize coating layer containing an alkali metal or alkaline earth metal orthophosphate salt devoid of hydrogen. The inventive abrasive article reduces the grinding energy required while improving abrading efficiency in some cases.
摘要:
An abrasive article including (i) a first backing, (ii) a plurality of protrusions attached to the first surface of the first backing and including a grinding aid, wherein the first surface of the first backing is contoured by the protrusions so as to define a plurality of peaks and valleys, and (iii) a coating of abrasive particles adhered to the contoured first surface of the first backing so as to cover at least a portion of both the peaks and the valleys.
摘要:
A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution including at least one polyelectrolyte and a surfactant. In certain embodiments, the wafer polishing composition can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive Chemical Mechanical Polishing (CMP) process. Also disclosed is a CMP method and a process for polishing a wafer using the polishing composition.