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14 条记录 (耗时 0.016 秒)

    Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
    2.
    发明授权
    Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices 有权
    用于在半导体器件的制造中直接镀铜和填充以形成互连的方法和组合物

    公开(公告)号：US07579274B2

    公开(公告)日：2009-08-25

    申请号：US11708293

    申请日：2007-02-20

    申请人： José Gonzalez ,  Hervé Monchoix

    发明人： José Gonzalez ,  Hervé Monchoix

    IPC分类号： H01L21/44

    CPC分类号： C25D3/38 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76877

    摘要： The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices.According to the invention, this method comprises: providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5; bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath, applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated, removing the substrate from said electrolytic copper bath.

    摘要翻译： 本发明的目的是在半导体器件的制造中直接镀铜和填充以形成互连的方法和组合物。 根据本发明，该方法包括：提供一种在溶剂中含有浓度为45-200mM，优选45-100mM的铜离子源和至少一种铜络合物的铜离子源的电解铜浴 其是具有2至4个胺官能团的脂族多胺，其浓度为30至200mM，优选为60至200mM; 铜/络合剂的摩尔比为0.2至2，优选0.3至1.5; 使所述衬底的所述铜扩散阻挡层与所述电解铜浴接触，向所述衬底施加电偏压持续时间，以根据要电镀的铜的厚度调节，从所述电解铜浴移除衬底。

    Palladium complex salt and use thereof for adjusting palladium concentration of an electrolytic solution for deposit of palladium or one of its alloys
    3.
    发明授权
    Palladium complex salt and use thereof for adjusting palladium concentration of an electrolytic solution for deposit of palladium or one of its alloys 失效
    钯络合盐及其用于调节用于沉积钯或其合金之一的电解液的钯浓度的用途

    公开(公告)号：US06743950B2

    公开(公告)日：2004-06-01

    申请号：US10239862

    申请日：2002-10-03

    申请人： José Gonzalez ,  Lionel Chalumeau ,  Michel Limayrac

    发明人： José Gonzalez ,  Lionel Chalumeau ,  Michel Limayrac

    IPC分类号： C07C21100

    CPC分类号： C25D3/52 ,  C01G55/00

    摘要： A novel complex salt off palladium sulfate and ethylenediamine contains 31 to 41% by weight of palladium and has a molar ratio [SO4]:[Pd] of between 0.9 and 1.15 and a ratio [ethylenediamine ]:[Pd] of between 0.8 and 1.2. The invention further relates to a process for the preparation of this complex salt, and to the use of this complex salt for introducing palladium into an aqueous electrolysis bath of acidic pH for the electrochemical deposition of palladium or one of its alloys, or for adjusting the palladium concentration of such a bath.

    摘要翻译： 硫酸钯和乙二胺的新型复合盐含有31〜41重量％的钯，摩尔比[SO 4]：[Pd]为0.9〜1.15，[乙二胺]：[Pd]的比例为0.8〜1.2 。 本发明还涉及一种制备该复合盐的方法，以及该复合盐用于将钯引入酸性pH的水性电解槽中以用于电化学沉积钯或其合金之一或用于调节 这种浴的钯浓度。

    Electrolytic solution for electrochemical deposit of palladium or its alloys
    4.
    发明授权
    Electrolytic solution for electrochemical deposit of palladium or its alloys 失效
    用于钯或其合金的电解沉积的电解液

    公开(公告)号：US06743346B2

    公开(公告)日：2004-06-01

    申请号：US10239863

    申请日：2002-10-03

    申请人： José Gonzalez ,  Lionel Chalumeau ,  Michel Limayrac

    发明人： José Gonzalez ,  Lionel Chalumeau ,  Michel Limayrac

    IPC分类号： C25D356

    CPC分类号： C25D3/52 ,  C25D3/567

    摘要： An aqueous electrolysis bath of acidic pH for the electrochemical deposition of palladium and its alloys, the bath containing a palladium compound and optionally at least one compound of a secondary metal to be co-deposited in the form of an alloy with the palladium. The bath also contains ethylenediamine as a palladium complexing agent, and an organic brightening agent, 3-(3-pyridyl)acrylic acid, 3-(3-quinolyl)acrylic acid or a salt thereof. The invention is also directed to a process for the electroplating of palladium or a palladium alloy utilizing an electrolysis bath as defined above by using current densities of between 0.5 and 150 A/dm2.

    摘要翻译： 用于电化学沉积钯及其合金的酸性电解浴，所述浴含有钯化合物和任选的至少一种二次金属化合物，以与钯合金的形式共沉积。 该浴还含有乙二胺作为钯络合剂，和有机增白剂3-（3-吡啶基）丙烯酸，3-（3-喹啉基）丙烯酸或其盐。 本发明还涉及使用上述通过使用0.5至150A / dm 2的电流密度定义的电解浴来电镀钯或钯合金的方法。

    Method of preparing an electrically insulating film and application for the metallization of vias
    5.
    发明授权
    Method of preparing an electrically insulating film and application for the metallization of vias 有权
    制备电绝缘膜的方法和金属化通孔的应用

    公开(公告)号：US08119542B2

    公开(公告)日：2012-02-21

    申请号：US12495137

    申请日：2009-06-30

    申请人： Vincent Mevellec ,  José Gonzalez ,  Dominique Suhr

    发明人： Vincent Mevellec ,  José Gonzalez ,  Dominique Suhr

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02118 ,  C25D7/123 ,  C25D13/18 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/76843 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate.According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits.

    摘要翻译： 本发明基本上涉及在诸如硅衬底的电导体或半导体衬底的表面上制备电绝缘膜的方法。 根据本发明，该方法包括：a）使所述表面与包含质子溶剂的液体溶液接触; 至少一种重氮盐; 至少一种可聚合并可溶于所述质子溶剂的单体; 至少一种足够量的酸以通过将所述溶液的pH调节至小于7，优选小于2.5的值来稳定所述重氮盐; b）根据电位或电流脉冲模式的所述表面的极化持续足够长的时间以形成厚度为至少60纳米，优选为80至500纳米的膜。 应用：通孔的金属化，特别是3D集成电路的金属化。

    Electroplating Composition for Coating a Substrate Surface with a Metal
    6.
    发明申请
    Electroplating Composition for Coating a Substrate Surface with a Metal 有权
    用金属涂覆基材表面的电镀组合物

    公开(公告)号：US20090183993A1

    公开(公告)日：2009-07-23

    申请号：US11992323

    申请日：2006-09-20

    申请人： Jérôme Daviot ,  José Gonzalez

    发明人： Jérôme Daviot ,  José Gonzalez

    IPC分类号： C25D5/24 ,  H01L21/288

    CPC分类号： C25D5/54 ,  C25D3/38 ,  C25D5/34 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76873

    摘要： The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits.According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5. Application: microelectronics field

    摘要翻译： 本发明的目的是一种电镀组合物，其特别用于在制造用于集成电路的互连件中涂覆铜扩散阻挡层。 根据本发明，该组合物在浓度为0.4至40mM之间的溶剂溶液中包含铜离子源; 选自伯脂族胺，仲脂族胺，叔脂族胺，芳族胺，氮杂环和肟的至少一种铜络合剂; 铜/络合剂的摩尔比在0.1和2.5之间，优选在0.3和1.3之间; 并且所述组合物的pH小于7，优选3.5至6.5。 应用：微电子领域

    COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION
    9.
    发明申请
    COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION 审中-公开
    铜电镀组合物和使用该组合物在半导体衬底中填充空穴的方法

    公开(公告)号：US20130168255A1

    公开(公告)日：2013-07-04

    申请号：US13703515

    申请日：2011-06-09

    申请人： Nadia Frederich ,  Frédéric Raynal ,  José Gonzalez

    发明人： Nadia Frederich ,  Frédéric Raynal ,  José Gonzalez

    IPC分类号： C25D3/38

    CPC分类号： C25D7/12 ,  C25D3/38 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76898

    摘要： The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a “through-via” structure for the production of interconnects in three-dimensional integrated circuits.According to the invention, this composition comprises in solution in a solvent: copper ions in a concentration lying between 45 and 1500 mM; a complexing agent for the copper consisting of at least one compound chosen from aliphatic polyamines having 2 to 4 amino groups, preferably ethylenediamine, in a concentration lying between 45 and 3000 mM; the molar ratio between the copper and said complexing agent lying between 0.1 and 5; thiodiglycolic acid in a concentration lying between 1 and 500 mg/l; and optionally a buffer system, in particular ammonium sulfate, in a concentration lying between 0.1 and 3M.

    摘要翻译： 本发明的主题是特别旨在通过铜的电镀来填充诸如“通孔”结构的半导体衬底中的空腔的组合物，用于在三维集成电路中制造互连。 根据本发明，该组合物在溶剂中包含浓度在45和1500mM之间的铜离子; 由至少一种选自具有2-4个氨基的脂族多胺，优选乙二胺的化合物组成的铜络合剂，其浓度介于45和3000mM之间; 铜和络合剂之间的摩尔比在0.1和5之间; 浓度在1至500mg / l之间的硫二甘醇酸; 和任选的浓度在0.1和3M之间的缓冲系统，特别是硫酸铵。