利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.011 秒)

    Double flip semiconductor device and method for fabrication
    2.
    发明申请
    Double flip semiconductor device and method for fabrication 审中-公开
    双层半导体器件及其制造方法

    公开(公告)号：US20080197369A1

    公开(公告)日：2008-08-21

    申请号：US11708990

    申请日：2007-02-20

    申请人： Max Batres ,  James Ibbetson ,  Nicholas W. Medendorp ,  Julio A. Garceran

    发明人： Max Batres ,  James Ibbetson ,  Nicholas W. Medendorp ,  Julio A. Garceran

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： A double flip-chip semiconductor device formed by a double flip fabrication process. Epitaxial layers are grown on a substrate in the normal fashion with the n-type layers grown first and the p-type layers grown subsequently. The chip is flipped a first time and mounted to a sacrificial layer. The original substrate is removed, exposing the n-type layer, and various additional layers and treatments are added to the device. Because the n-type layer is exposed during fabrication, the layer may be processed in various ways including adding a reflective element, texturing the surface or adding microstructures to the layer to improve light extraction. The chip is flipped a second time and mounted to a support element. The sacrificial layer is then removed and additional layers and treatment are added to the device. The finished device features a configuration in which the layers maintain the same orientation with respect to the support element that they had with the original substrate on which they were grown. Processing the n-type layers, rather than the p-type layers as in a single flip process, provides greater design flexibility when selecting features to add to the device. Thus, previously unavailable processes and reflective elements may be utilized, enhancing the external quantum efficiency of the device.

    摘要翻译： 通过双层翻转制造工艺形成的双倒装芯片半导体器件。 以正常方式在衬底上生长外延层，其中首先生长n型层，随后生长p型层。 芯片首次翻转并安装到牺牲层。 去除原始基底，暴露n型层，并将各种附加层和处理添加到该装置中。 因为n型层在制造过程中被曝光，所以该层可以以各种方式加工，包括添加反射元件，使表面纹理化或者向层中添加微结构以改善光提取。 芯片第二次翻转并安装在支撑元件上。 然后去除牺牲层，并向设备添加附加层和处理。 完成的装置具有这样的构造，其中层相对于它们与其生长在其上的原始基底所具有的支撑元件保持相同的取向。 在单次翻转过程中处理n型层而不是p型层，在选择要添加到设备中的特征时，提供更大的设计灵活性。 因此，可以利用先前不可用的处理和反射元件，增强器件的外部量子效率。

    LIGHTING APPARATUS WITH ENCODED INFORMATION
    3.
    发明申请
    LIGHTING APPARATUS WITH ENCODED INFORMATION 审中-公开
    带有编码信息的照明设备

    公开(公告)号：US20110248836A1

    公开(公告)日：2011-10-13

    申请号：US12758007

    申请日：2010-04-11

    申请人： George R. Brandes ,  Julio A. Garceran

    发明人： George R. Brandes ,  Julio A. Garceran

    IPC分类号： G08B5/00

    CPC分类号： H01L25/167 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13033 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A solid state emitter or emitter package has an associated information containing element including machine readable encoded information that may be indicative of or enable retrieval of information useful for operation and/or control of at least one emitter An information containing element may be dynamically updateable, and may receive signals from at least one sensor arranged to sense a condition or characteristic of an emitter device. Operation of at least one emitter may be adjusted responsive to sensed values and predeveloped operating settings correlated to such values to mitigate degradation of output characteristics. A lighting device such as a lamp or light fixture may include an information exchange element arranged to communicate with an information containing element of an emitter or emitter package. Operation of a lighting device may depend on authentication of an emitter by a lighting.

    摘要翻译： 固态发射器或发射器封装具有关联的信息包含元件，其包括机器可读编码信息，其可以指示或使得能够检索对于至少一个发射器的操作和/或控制有用的信息。包含信息的元件可以是动态可更新的，以及 可以从布置成感测发射器装置的状态或特性的至少一个传感器接收信号。 至少一个发射器的操作可以响应于与这些值相关联的感测值和预先开发的操作设置而被调整，以减轻输出特性的劣化。 诸如灯或灯具的照明装置可以包括被布置为与发射器或发射器封装的信息容纳元件通信的信息交换元件。 照明装置的操作可以取决于通过照明对发射器的认证。