Coated polymeric substrates having improved surface smoothness suitable for use in flexible electronic and opto-electronic devices
    1.
    发明授权
    Coated polymeric substrates having improved surface smoothness suitable for use in flexible electronic and opto-electronic devices 有权
    涂覆的聚合物基材具有改善的表面光滑度,适用于柔性电子和光电子器件

    公开(公告)号:US08501300B2

    公开(公告)日:2013-08-06

    申请号:US12640835

    申请日:2009-12-17

    摘要: A method of manufacture of a coated polymeric film which comprises performing in sequence the steps of: (i) forming a substrate layer comprising poly(ethylene naphthalate) having a thickness in a range from 50 μm to 250 μm; (ii) stretching the substrate layer in at least one direction; (iii) heat-setting the substrate layer under dimensional restraint at a tension in the range of about 19 to about 75 kg/m of film width, at a temperature above the glass transition temperature of the poly(ethylene naphthalate) but below the melting temperature thereof; (iv) heat-stabilizing the substrate layer under a tension of less than 5 kg/m of film width, and at a temperature above the glass transition temperature of the poly(ethylene naphthalate) but below the melting temperature thereof; and (v) disposing a coating layer on a surface of the substrate layer by a process comprising applying a planarizing coating composition thereto such that a surface of said coating layer exhibits an Ra value of less than 0.6 nm, and/or an Rq value of less than 0.8 nm; and wherein the coating layer has a dry thickness in a range from 1 μm to 20 μm and the number of surface peaks in the range 300 to 600 nm per 5 cm2 area (N(300-600)) of the film after coating is less than 50.

    摘要翻译: 一种制造涂覆的聚合物膜的方法,其包括以下步骤:(i)形成包含厚度在50μm至250μm之间的聚萘二甲酸乙二醇酯的基材层; (ii)在至少一个方向上拉伸基底​​层; (iii)在高于聚萘二甲酸乙二醇酯的玻璃化转变温度但低于熔融的玻璃化转变温度的温度下,以约19至约75kg / m 2的膜宽度的张力在尺寸限制下热定型基材层 温度; (iv)在低于5kg / m 2膜宽的张力和高于聚萘二甲酸乙二醇酯的玻璃化转变温度但低于其熔融温度的温度下对基材层进行热稳定化; 和(v)通过包括在其上施加平坦化涂料组合物使得所述涂层的表面呈现小于0.6nm的Ra值和/或Rq值的方法在基材层的表面上设置涂层 小于0.8nm; 并且其中所述涂层的干燥厚度为1μm至20μm,并且涂布后的膜的每5cm2面积(N(300-600))在300-600nm范围内的表面峰数量(N(300-600))较小 超过50。

    METROLOGY METHOD
    3.
    发明申请
    METROLOGY METHOD 有权
    计量方法

    公开(公告)号:US20150241210A1

    公开(公告)日:2015-08-27

    申请号:US14429139

    申请日:2013-09-19

    申请人: Karl RAKOS

    发明人: Karl Rakos

    IPC分类号: G01B11/30 G01B11/24

    摘要: An interferometric method for profiling the topography of a sample surface comprises: (i) a first interferometric profiling step at a first magnification M1 to produce a map comprising pixels with planar (X,Y)-coordinates corresponding to the area of the sample surface, (ii) identifying pixel(s) which meet or exceed a Cut-Off Threshold, and meet or exceed a parameter NNAP; (iii) identifying pixel(s) for which no z-coordinate has been recorded; (iv) generating a Low Magnification Frame File (LMFF) which comprises the (X,Y) coordinates of the pixels derived from steps (ii) and (iii); (v) a second interferometric profiling step at a second magnification M2, wherein M2>M1, wherein only selected regions of the sample surface are analysed, said selected regions comprising the features associated with the (X,Y)-coordinates of the pixels in the Low Magnification Frame File; and further comprising a step selected from: (vi) analysing the output of the second interferometric profiling step to differentiate between an intrinsic defect and an extrinsic defect; (vii) assessing whether said sample surface meets one or more quality control standard(s) and/or one or more target property or properties; and (viii) assessing whether said sample surface is suitable as a surface for subsequent coating.

    摘要翻译: 用于对样品表面的形貌进行分析的干涉测量方法包括:(i)在第一放大率M1处的第一干涉测量步骤,以产生包括对应于样品表面的面积的平面(X,Y) - 坐标的像素的图, (ii)识别符合或超过切断阈值的像素,并且满足或超过参数NNAP; (iii)识别没有记录z坐标的像素; (iv)产生包括从步骤(ii)和(iii)导出的像素的(X,Y)坐标的低放大帧文件(LMFF); (v)在第二放大率M2处的第二干涉测量步骤,其中M2> M1,其中仅分析样品表面的选定区域,所述选择的区域包括与所述像素的(X,Y)坐标相关联的特征 低放大帧文件; 并且还包括选自以下的步骤:(vi)分析所述第二干涉测量步骤的输出以区分本征缺陷和非本征缺陷; (vii)评估所述样品表面是否满足一种或多种质量控制标准和/或一种或多种目标性质或性质; 和(viii)评估所述样品表面是否适合作为后续涂层的表面。

    Anti-Microbial Polymeric Film and Method of Manufacture of Said Film
    6.
    发明申请
    Anti-Microbial Polymeric Film and Method of Manufacture of Said Film 审中-公开
    抗微生物聚合物薄膜和所述薄膜的制造方法

    公开(公告)号:US20110081530A1

    公开(公告)日:2011-04-07

    申请号:US12997496

    申请日:2009-06-10

    摘要: A method of manufacture of an anti-microbial polymeric film comprising coextruding a polymeric substrate layer comprising a first layer of a first polymeric material and a second layer of a second polymeric material wherein the crystalline melting temperature (TM2) of said second polymeric material is lower than the crystalline melting temperature (TM1) of the first polymeric material; stretching the coextruded substrate in a first direction; optionally stretching the substrate layer in a second, orthogonal direction; disposing on the surface of the polymeric second layer a composition comprising a particulate antimicrobial compound and a liquid vehicle, and preferably also a surfactant; and heat-setting the stretched film at a temperature above the crystalline melting temperature (TM2) of the second polymeric material but below the crystalline melting temperature (TM1) of the first polymeric material; wherein the composition is applied to the polymeric second layer after the coextrusion step but before the heat-setting step; such that in the final film said second layer comprises said anti-microbial compound in an amount of from about 1 to about 80% by weight of said polymeric material of the second layer is described. Anti-microbial films are also described.

    摘要翻译: 一种制造抗微生物聚合物膜的方法,包括将包含第一聚合物材料的第一层和第二聚合物材料的第二层的聚合物基底层共挤出,其中所述第二聚合物材料的结晶熔融温度(TM2)较低 比第一聚合物材料的结晶熔融温度(TM1)高; 在第一方向上拉伸所述共挤出的基材; 任选地在第二正交方向上拉伸基底​​层; 在聚合物第二层的表面上设置包含颗粒状抗微生物化合物和液体载体的组合物,优选还包括表面活性剂; 以及在高于第二聚合物材料的结晶熔化温度(TM2)但低于第一聚合物材料的结晶熔融温度(TM1)的温度下热定型拉伸膜; 其中所述组合物在共挤出步骤之后但在热定形步骤之前施加到聚合物第二层; 使得在最终膜中所述第二层包含所述抗微生物化合物的量为所述第二层聚合物材料的约1至约80重量%。 还描述了抗微生物膜。