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18 条记录 (耗时 0.014 秒)

    Method and materials for reverse patterning
    1.
    发明授权
    Method and materials for reverse patterning 有权
    用于反向图案化的方法和材料

    公开(公告)号：US08828252B2

    公开(公告)日：2014-09-09

    申请号：US13386514

    申请日：2010-06-22

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： B44C1/22 ,  H01L21/02 ,  C08G77/18 ,  C08L83/04 ,  H01L21/033 ,  C09D183/04

    CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

    摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。

    Method And Materials For Reverse Patterning
    5.
    发明申请
    Method And Materials For Reverse Patterning 有权
    反向图案的方法和材料

    公开(公告)号：US20120123135A1

    公开(公告)日：2012-05-17

    申请号：US13386514

    申请日：2010-06-22

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： B29B13/08 ,  B29C33/38 ,  B29C59/16 ,  C07F7/18

    CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

    摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。

    Diphenylsiloxane oligomers functionalized at both terminal and method for the preparation thereof
    8.
    发明授权
    Diphenylsiloxane oligomers functionalized at both terminal and method for the preparation thereof 失效
    两末端官能化的二苯基硅氧烷低聚物及其制备方法

    公开(公告)号：US5502229A

    公开(公告)日：1996-03-26

    申请号：US403991

    申请日：1995-03-14

    申请人： Brian R. Harkness ,  Mamoru Tachikawa ,  Kasumi Takeuchi

    发明人： Brian R. Harkness ,  Mamoru Tachikawa ,  Kasumi Takeuchi

    IPC分类号： C07F7/08 ,  C08G77/04 ,  C08G77/38

    CPC分类号： C08G77/045 ,  C07F7/0849 ,  C07F7/0896 ,  C08G77/04

    摘要： There is disclosed a diphenylsiloxane oligomer functionalized at both terminals, and methods for the preparation thereof, said oligomer having the following general formula G-(OSi(Ph).sub.2).sub.m O--G wherein Ph denotes a phenyl radical, m is 3 to 50 and G is has a formula independently selected from the group consisting of ##STR1## in which R.sup.1 is independently selected from the group consisting of hydrogen and a monovalent hydrocarbon group having 2 to 8 carbon atoms, said monovalent hydrocarbon group excluding phenyl, tolyl, xylyl, and ethylphenyl radicals, R is independently selected from the group consisting of R.sup.1, methyl radical and phenyl radical, Q is a divalent hydrocarbon group and n is an integer having a value of 1 to 3.

    摘要翻译： 公开了两端官能化的二苯基硅氧烷低聚物及其制备方法，所述低聚物具有以下通式G-（OSi（Ph）2）mO-G，其中Ph表示苯基，m为3〜50， G具有独立地选自由以下组成的组的式子：其中R 1独立地选自氢和具有2至8个碳原子的一价烃基，所述一价烃基除了苯基，甲苯基，二甲苯基， 和乙苯基，R独立地选自R1，甲基和苯基，Q是二价烃基，n是1〜3的整数。

    Curable Silicone Resin Composition and Cured Body Thereof
    9.
    发明申请
    Curable Silicone Resin Composition and Cured Body Thereof 审中-公开
    可固化硅树脂组合物及其固化体

    公开(公告)号：US20090298980A1

    公开(公告)日：2009-12-03

    申请号：US12300885

    申请日：2007-05-11

    申请人： Makoto Yoshitake ,  Kasumi Takeuchi ,  Takashi Sagawa ,  Koji Nakanishi

    发明人： Makoto Yoshitake ,  Kasumi Takeuchi ,  Takashi Sagawa ,  Koji Nakanishi

    IPC分类号： C08K5/50

    CPC分类号： C08K5/50 ,  C08G77/12 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08L83/04 ,  C08L83/00

    摘要： A hydrosilylation-curable silicone resin composition having a melting point of not less than 5O0 C and a melt-viscosity of not less than 5,000 mPa-s at 15O0 C, which is characterized by having a phosphorous-containing hydrosilylation-reaction retardant; is solid at room temperature, melts with heating, suitable for transfer and injection molding, and, when cured, capable of forming a cured body of high strength and minimal color change under the effect of ultraviolet rays and heat.

    摘要翻译： 一种在150℃下熔点不低于50℃，熔体粘度不低于5,000mPa·s的氢化硅烷化固化性有机硅树脂组合物，其特征在于具有含磷氢化硅烷化反应阻滞剂; 在室温下为固体，加热熔融，适于转印和注射成型，并且在固化时能够在紫外线和热的作用下形成高强度和最小颜色变化的固化体。