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    Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers
    2.
    发明授权
    Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers 失效
    气相外延 - 氢化物技术，具有用于制备InGaAs层的恒定合金源

    公开(公告)号：US4888303A

    公开(公告)日：1989-12-19

    申请号：US269225

    申请日：1988-11-09

    申请人： Kenneth P. Quinlan

    发明人： Kenneth P. Quinlan

    IPC分类号： C30B25/02

    CPC分类号： C30B25/02 ,  C30B29/40

    摘要： A continouous process of forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique having a pressure controlled source of hydrogen chloride gas to maintain a partial pressure of the gas as a function of time as the amount of gallium is depleted from the alloy source melt of Ga/In during the growth of the epitaxial layer.

    摘要翻译： 使用具有压力控制的氯化氢气体源的气相外延氢化物技术来形成InGaAs的外延层的连续工艺，以保持作为时间的函数的气体的分压，因为镓的量从合金中消耗 在外延层生长期间Ga / In的源熔体。

    Photoelectrochemical etching of p-InP
    4.
    发明授权
    Photoelectrochemical etching of p-InP 失效
    光电化学蚀刻p-InP

    公开(公告)号：US5824206A

    公开(公告)日：1998-10-20

    申请号：US674229

    申请日：1996-06-28

    申请人： Kenneth P. Quinlan

    发明人： Kenneth P. Quinlan

    IPC分类号： C25F3/12 ,  H01L21/306

    CPC分类号： H01L21/30612 ,  C25F3/12

    摘要： Photoelectrochemical etching of p-InP in various nitric acid solutions demonstrates that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a slight decrease with lower potentials. Etch rates exhibit a linear relation with relative light intensity. The values of etch rate for p-InP polarized at -1.0 V vary from 0.07 to 1.24 .mu.m/min. for HNO.sub.3 solutions with concentrations ranging from 1.0 to 5.0 M. Etch rates determined in the 4 M acid range were reproducible within 4%. With acid concentrations greater than 5 M, the etch rates were observed to be inconsistent. XPS studies indicated that these inconsistencies are probably due to the formation of organic nitrogen compounds on the surface of p-InP.

    摘要翻译： 在各种硝酸溶液中对p-InP的光电化学蚀刻表明，半导体在负电位区域以良好的蚀刻速率进行蚀刻。 蚀刻速率随着电位降低而增加到-1.0V，并且随着较低的电位而略微降低。 蚀刻速率与相对光强度呈线性关系。 在-1.0V下极化的p-InP的蚀刻速率值为0.07至1.24μm/ min。 浓度范围为1.0至5.0M的HNO3溶液。在4M酸范围内测定的蚀刻速率可在4％内重现。 当酸浓度大于5M时，观察到蚀刻速率不一致。 XPS研究表明，这些不一致可能是由于在p-InP表面上形成有机氮化合物。

    Ion-sensitive photodetector
    7.
    发明授权
    Ion-sensitive photodetector 失效
    离子敏感光电探测器

    公开(公告)号：US4792836A

    公开(公告)日：1988-12-20

    申请号：US936195

    申请日：1986-12-01

    申请人： Kenneth P. Quinlan

    发明人： Kenneth P. Quinlan

    IPC分类号： H01L31/112 ,  H01L27/14 ,  H01L27/02 ,  H01L31/00

    CPC分类号： H01L31/112 ,  H01L51/428 ,  Y02E10/549

    摘要： A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation (with proton movement) therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input.

    摘要翻译： 使用改进的离子敏感场效应晶体管的光电检测器具有一层光活性材料。 在暴露于光束时，光活性材料在其中产生电荷分离（具有质子运动），其影响漏极电流。 栅极电压的变化使漏极电流稳定是光输入强度的量度。