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15 条记录 (耗时 0.009 秒)

    Method for controlling thin film growth of compound semiconductors using mass spectrometer detectors
    1.
    发明授权
    Method for controlling thin film growth of compound semiconductors using mass spectrometer detectors 失效
    使用质谱仪检测器控制化合物半导体薄膜生长的方法

    公开(公告)号：US5400739A

    公开(公告)日：1995-03-28

    申请号：US958888

    申请日：1992-10-09

    申请人： Yung-Chung Kao ,  Francis G. Celii

    发明人： Yung-Chung Kao ,  Francis G. Celii

    IPC分类号： C30B23/02 ,  H01L21/203 ,  H01L21/66 ,  C30B21/00

    CPC分类号： C30B29/40 ,  B24B37/013 ,  C30B23/002 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L22/26

    摘要： A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.

    摘要翻译： 提供分子束外延（MBE）系统（10）以在化合物半导体衬底（40）上生长薄膜，外延层（44,46,48,50）。 质谱仪检测器（95）用于监测和控制来自MBE系统（10）内的所选源（21,23,25,27）的通量。 通过控制相对于衬底（40）的铟通量的温度和时间，可以在半导体衬底（40）上生长均匀的砷化镓镓（46,50）。 产生具有均匀的摩尔分数浓度和减小的晶格应变的砷化铟镓的外延层（46）。

    Method for producing large surface plate or disc-shaped Si crystals with columnar structure
    2.
    发明授权
    Method for producing large surface plate or disc-shaped Si crystals with columnar structure 失效
    用于生产具有柱状结构的大表面板或圆盘状Si晶体的方法

    公开(公告)号：US4341589A

    公开(公告)日：1982-07-27

    申请号：US132115

    申请日：1980-03-20

    申请人： Josef Grabmaier

    发明人： Josef Grabmaier

    IPC分类号： C30B11/00 ,  C30B21/00 ,  C30B29/06 ,  C30B29/64 ,  H01L21/208

    CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B29/60 ,  Y10S438/925

    摘要： Large surface silicon crystal layers with a columnar structure are produced by directing a plurality of spaced-apart cooling gas streams arranged relative to one another to correspond to a desired columnar structure and positioned a relatively short distance above a free surface of a silicon melt surface located below such system so that a spontaneous seed crystal formation occurs at the regions or areas of the melt immediately below each gas stream and thereafter the affected melt surface is solidified, and then removing the so-formed plate or disc-shaped silicon body from the melt. Dopant material can be incorporated within the so-formed plate or disc-shaped silicon crystal so that a pn-juncture parallel to the surface of such plate or disc is attained.

    摘要翻译： 具有柱状结构的大表面硅晶体层通过引导相对于彼此布置的多个间隔开的冷却气体流而产生，以对应于期望的柱状结构并且在位于所述硅熔体表面的自由表面上方定位相对较短的距离 在这种系统之下，使得立即在每个气流下面的熔体的区域或区域处发生自发的晶种形成，然后使受影响的熔体表面固化，然后从熔体中去除如此形成的板或盘状硅体 。 掺杂材料可以被结合到如此形成的板或盘状硅晶体中，从而获得平行于这种板或盘的表面的pn结。

    Method for the production of solar grade silicon
    3.
    发明授权
    Method for the production of solar grade silicon 有权
    生产太阳能级硅的方法

    公开(公告)号：US09039833B2

    公开(公告)日：2015-05-26

    申请号：US13203493

    申请日：2010-02-25

    申请人： Harsharn Tathgar

    发明人： Harsharn Tathgar

    IPC分类号： C30B17/00 ,  C01B33/021 ,  C01B33/037 ,  C30B21/00 ,  C30B29/06

    CPC分类号： C01B33/021 ,  C01B33/037 ,  C30B17/00 ,  C30B21/00 ,  C30B29/06

    摘要： The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy containing silicon, or a refined silicon melt, wherein small silicon crystals are added to the melt and the resulting large silicon crystals are separated from the melt. The separation may be performed by centrifugation or filtration.

    摘要翻译： 本发明涉及一种制备太阳能级硅的方法，包括在含有硅的超共晶二元或三元合金或精制硅熔体中结晶大量高纯度硅晶体，其中将小硅晶体加入熔体中， 所得到的大的硅晶体与熔体分离。 分离可通过离心或过滤进行。

    Method for production of spinel single crystal filaments
    7.
    发明授权
    Method for production of spinel single crystal filaments 失效
    尖晶石单晶丝的生产方法

    公开(公告)号：US5650007A

    公开(公告)日：1997-07-22

    申请号：US612804

    申请日：1996-03-11

    申请人： Shoji Kawakami ,  Hideyo Tabata ,  Toyoaki Yamada ,  Shunsaku Sakakibara

    发明人： Shoji Kawakami ,  Hideyo Tabata ,  Toyoaki Yamada ,  Shunsaku Sakakibara

    IPC分类号： C30B21/00 ,  C30B21/04 ,  C30B29/26 ,  C30B29/62

    CPC分类号： C30B21/04

    摘要： Spinel single crystal filaments are produced by a method which consists essentially of solidifying in one direction a melt consisting essentially of 30 to 70% by weight of magnesium oxide, 10 to 45% by weight of aluminum oxide, and 15 to 45% by weight of silicon dioxide, thereby forming a composite texture containing a matrix of forsterite and filaments of spinel dispersed in the matrix, and then separating the filaments of spinel from the composite texture.

    摘要翻译： 尖晶石单晶长丝是通过一种方法生产的，该方法主要包括在一个方向上固化基本上由30至70重量％的氧化镁，10至45重量％的氧化铝和15至45重量％的氧化铝组成的熔体， 从而形成包含分散在基质中的尖晶石的镁橄榄石和长丝的基质的复合结构，然后从复合结构中分离出尖晶石的长丝。

    Low density single crystal super alloy
    8.
    发明授权
    Low density single crystal super alloy 失效
    低密度单晶超合金

    公开(公告)号：US4721540A

    公开(公告)日：1988-01-26

    申请号：US677797

    申请日：1984-12-04

    申请人： Kenneth Harris ,  Gary L. Erickson

    发明人： Kenneth Harris ,  Gary L. Erickson

    IPC分类号： C30B21/00

    CPC分类号： C30B21/00

    摘要： A single crystal nickel alloy is provided having many of the foundry and performance characteristics of the higher density, single crystal, nickel base super alloys from which the vanes and blades are cast for high performance turbine aircraft engines. The lower density of this alloy permits its use for rebuilding and upgrading the performance of older turbine aircraft engines of designs which cannot withstand the centrifugal forces generated by the new state of the art higher density single crystal super alloys. The alloy for the first time provides a lower density single crystal alloy capable of heat treatment to stabilize its microstructure for high temperature, high stress use. It also provides for the first time a lower density alloy having acceptable resistance to the effects of high temperature sulfidation, salt corrosion and also to have good coating life. By significant changes in the alloy composition the resulting alloy has creep rupture and stress rupture performance characteristics similar to that of the high density nickel base super alloys while maintaining a density characteristic of equiaxe alloys.

    摘要翻译： 提供单晶镍合金，其具有许多铸造和性能特征的高密度，单晶，镍基超合金，其中叶片和叶片从其铸造用于高性能涡轮机飞机发动机。 该合金的较低密度允许其用于重建和升级不能承受由新型高密度单晶超级合金产生的离心力的设计的旧涡轮飞机发动机的性能。 该合金首次提供了能够进行热处理的较低密度单晶合金，以稳定其高温，高应力使用的微结构。 它还首次提供对高温硫化，盐腐蚀的影响具有可接受的耐受性的低密度合金，并且还具有良好的涂覆寿命。 通过合金组成的显着变化，所得合金具有类似于高密度镍基超合金的蠕变断裂和应力断裂性能特性，同时保持等轴合金的密度特性。

    Directionally solidified eutectic reinforcing fibers and fiber reinforced composites containing the fibers
    9.
    发明授权
    Directionally solidified eutectic reinforcing fibers and fiber reinforced composites containing the fibers 失效
    定向凝固的共晶增强纤维和含纤维的纤维增强复合材料

    公开(公告)号：US5468548A

    公开(公告)日：1995-11-21

    申请号：US100879

    申请日：1993-08-02

    申请人： Anthony F. Giamei ,  Earl R. Thompson

    发明人： Anthony F. Giamei ,  Earl R. Thompson

    IPC分类号： C30B29/60 ,  C04B35/622 ,  C30B13/00 ,  C30B21/00 ,  D04H1/00 ,  D02G3/00 ,  C04B35/48

    CPC分类号： C30B13/00 ,  C04B35/62231 ,  C04B35/62236 ,  C30B29/16 ,  C30B29/20 ,  Y10S428/902 ,  Y10S428/903 ,  Y10T428/249924 ,  Y10T428/249927 ,  Y10T428/249928 ,  Y10T428/2929

    摘要： Directionally Solidified Eutectic Reinforcing FibersEutectic reinforcing fibers for high temperature composites include eutectic mixtures such as Al.sub.2 O.sub.3 --Y.sub.2 O.sub.3, Cr.sub.2 O.sub.3 --SiO.sub.2, MgO--Y.sub.2 O.sub.3, CaO--NiO, and CaO--MgO. The fibers may be made by several solidification processes. The edge defined film fed growth process (EFG), however, may be especially appropriate. In this process, a seed having a known composition contacts the surface of a eutectic melt in a crucible and forms a molten film. In the present invention, the composition of the seed may be equal to the composition of the eutectic melt. As the seed is pulled upward, the molten film solidifies to form a eutectic fiber. Directional solidification occurs toward the melt.

    摘要翻译： 定向凝固共晶增强纤维高温复合材料的共晶增强纤维包括共晶混合物，如Al2O3-Y2O3，Cr2O3-SiO2，MgO-Y2O3，CaO-NiO和CaO-MgO。 纤维可以通过几种固化方法制成。 然而，边缘定义的膜进料生长过程（EFG）可能是特别合适的。 在该方法中，具有已知组成的种子与坩埚中的共晶熔体的表面接触并形成熔融膜。 在本发明中，种子的组成可以等于共晶熔体的组成。 当种子被向上拉时，熔融的膜固化形成共晶纤维。 向熔体发生定向凝固。

    Seed and method for epitaxial solidification
    10.
    发明授权
    Seed and method for epitaxial solidification 失效
    种子和外延凝固方法

    公开(公告)号：US4289570A

    公开(公告)日：1981-09-15

    申请号：US969129

    申请日：1978-12-13

    申请人： Bruce E. Terkelsen

    发明人： Bruce E. Terkelsen

    IPC分类号： C30B19/00 ,  B22D27/04 ,  C30B11/00 ,  C30B11/14 ,  C30B21/00 ,  C30B21/02 ,  C30B29/52 ,  C30B17/00

    CPC分类号： C30B11/14 ,  B22D27/045 ,  C30B11/00 ,  C30B29/52

    摘要： A seed and method for epitaxial solidification of materials, a preferred seed having at least a portion with a melting point 20.degree.-45.degree. C. depressed from that of the alloy being solidified into an article. Boron and silicon are preferably added to nickel superalloys seeds when directionally solidified columnar grain and single crystal articles are formed. Improved seeds also have surface compositions which promote the dissolution of surface contamination films that interfere with epitaxy.

    摘要翻译： 用于外延固化材料的种子和方法，优选的种子具有至少一部分熔点为20°-45℃的部分，该合金的熔点低于合金固化成制品。 当形成定向凝固的柱状晶粒和单晶制品时，硼和硅优选加入到镍超合金种子中。 改良的种子还具有表面组合物，其促进干扰外延的表面污染膜的溶解。