公开(公告)号：US20150187625A1

公开(公告)日：2015-07-02

申请号：US14145680

申请日：2013-12-31

申请人： Matthew J. Busche ,  Vijay De. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Matthew J. Busche ,  Vijay De. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H05K7/20

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05K7/20218

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节来描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流通风室联接到冷却区域以从冷却区域排出冷却剂，并且多个流量控制阀定位在供应压力室和相应的一个冷却区域之间，以控制从供气室到冷却区的冷却剂的流量 冷却区。

公开(公告)号：US20170213754A1

公开(公告)日：2017-07-27

申请号：US15481183

申请日：2017-04-06

申请人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05K7/20218

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, a method for adjusting coolant flow in an electrostatic chuck includes heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer. Heat is detected at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck. A plurality of valves are adjusted to control coolant flow into the coolant chambers based on the detected heat.

公开(公告)号：US09622375B2

公开(公告)日：2017-04-11

申请号：US14145680

申请日：2013-12-31

申请人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H05K7/20 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05K7/20218

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

公开(公告)号：US09520315B2

公开(公告)日：2016-12-13

申请号：US14145702

申请日：2013-12-31

申请人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  Y10T137/0318

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节来描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流室连接到冷却区以从冷却区排出冷却剂。 多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区域的冷却剂流量。

公开(公告)号：US20150187626A1

公开(公告)日：2015-07-02

申请号：US14145702

申请日：2013-12-31

申请人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  Y10T137/0318

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流室连接到冷却区以从冷却区排出冷却剂。 多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区的冷却剂的流量。

公开(公告)号：US20090162647A1

公开(公告)日：2009-06-25

申请号：US12004907

申请日：2007-12-21

申请人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

发明人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

IPC分类号： B32B15/04 ,  B05D3/00

CPC分类号： C23C16/4404 ,  H01J37/32467 ,  H01J37/32477

摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.

摘要翻译： 描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。 该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。 氧化物涂层的结构本质上是柱状的。 构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩 涂层和金属或金属合金基材。 通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

公开(公告)号：US20090056745A1

公开(公告)日：2009-03-05

申请号：US11845620

申请日：2007-08-27

申请人： JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

发明人： JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

IPC分类号： C23G1/02

CPC分类号： C23C16/4407 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0047 ,  C11D11/0064

摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.

摘要翻译： 当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。 将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。 该部件在水中冲洗。 清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。

公开(公告)号：US06949203B2

公开(公告)日：2005-09-27

申请号：US10379439

申请日：2003-03-03

申请人： Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin ,  Jennifer Sun ,  Senh Thach ,  Lee Luo ,  Claes H. Bjorkman

发明人： Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin ,  Jennifer Sun ,  Senh Thach ,  Lee Luo ,  Claes H. Bjorkman

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76832 ,  H01J37/32458 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76807

摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.

摘要翻译： 在具有第一和第二蚀刻室的多室衬底处理系统中执行的集成原位蚀刻工艺。 在一个实施例中，第一室包括已经被粗糙化至少100个的内表面，而第二室包括具有小于约32μm的粗糙度的内表面， / SUB>。 该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模，电介质层，阻挡层和衬底中的特征的衬底，以接触第一室，其中介电层被刻蚀在鼓励聚合物的过程中 在室的粗糙内表面上形成。 然后在真空条件下将衬底从第一室转移到第二室，并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。 在光致抗蚀剂掩模被剥离之后，通过阻止在第二室的相对光滑的内表面上聚合物形成的工艺，阻挡层被蚀刻到多室基板处理系统的第二室中以接触的特征。 所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。 在一些实施例中，第一室的内表面具有在100和200之间的粗糙度，而在其它实施例中，第一室的内表面的粗糙度在110和160之间， SUB>。

公开(公告)号：US20100156054A1

公开(公告)日：2010-06-24

申请号：US12640496

申请日：2009-12-17

申请人： Jennifer Y. Sun ,  Senh Thach ,  Ren-Guan Duan

发明人： Jennifer Y. Sun ,  Senh Thach ,  Ren-Guan Duan

IPC分类号： H01L21/683 ,  C09J5/06 ,  C08L83/06 ,  H02N13/00

CPC分类号： H01L21/6833 ,  C08K3/22 ,  C08K3/28 ,  C08K2003/2227 ,  C08K2003/282 ,  C09D183/04 ,  C09J11/04 ,  C09J183/04 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23 ,  Y10T279/34

摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

摘要翻译： 本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。 在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。 硅基聚合物材料可以是具有低分子量（LMW）含量＆Sgr的分子量的聚二甲基硅氧烷（PDMS）结构。 D3-D10小于约500ppm。 在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。 在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。 在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

公开(公告)号：US20100140222A1

公开(公告)日：2010-06-10

申请号：US12632712

申请日：2009-12-07

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Senh Thach ,  Li Xu

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Senh Thach ,  Li Xu

IPC分类号： C08K3/10 ,  C08K3/16 ,  C08K3/28 ,  C08K3/08 ,  C08K3/34 ,  C08K3/22 ,  B32B7/12 ,  C23F1/02 ,  C23F1/08

CPC分类号： C09K3/10 ,  Y10T428/2857

摘要： A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN, SiC or Si3N4 and rare earth oxides. In an embodiment, the composition is utilized as a bonding adhesive for electrostatic chuck, bonding adhesive for shower head, bonding adhesive for liner, sealing material, O-ring, or plastic component.

摘要翻译： 公开了具有改善的等离子体电阻的填充聚合物组合物。 该组合物包括分散在聚合物基质中的颗粒填料。 颗粒填料可以是Nb2O5，YF3，AlN，SiC或Si3N4和稀土氧化物。 在一个实施方案中，组合物用作静电卡盘的粘合剂，用于喷头的粘合剂，衬垫的粘合剂，密封材料，O形环或塑料组分。