公开(公告)号：US10234435B2

公开(公告)日：2019-03-19

申请号：US15251553

申请日：2016-08-30

申请人： Sunghan Jung ,  Ami Choi ,  JungDae Park ,  Dong-Soo Lee ,  Ji-Won Eom ,  Kyung-Soo Chae ,  Kwang-Shin Lim

发明人： Sunghan Jung ,  Ami Choi ,  JungDae Park ,  Dong-Soo Lee ,  Ji-Won Eom ,  Kyung-Soo Chae ,  Kwang-Shin Lim

IPC分类号： G01N30/64 ,  G01N30/96 ,  B01J20/281

摘要： A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

公开(公告)号：US20140054690A1

公开(公告)日：2014-02-27

申请号：US13920634

申请日：2013-06-18

申请人： Hyun Kwang SHIN

发明人： Hyun Kwang SHIN

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/7827 ,  H01L21/28238 ,  H01L21/28273 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7813

摘要： A semiconductor device and a fabricating method thereof are provided, in which the semiconductor device includes a semiconductor substrate with a trench formed therein, a bottom electrode placed at a lower inner portion of the trench, the bottom electrode having an uneven upper surface, an insulating layer formed on an upper portion of the bottom electrode and on a sidewall of the trench, and a top electrode placed at an upper portion of the bottom electrode inside the trench, the top electrode having a top electrode which is uneven, in which the top electrode is so configured that the top electrode is inclined toward a center portion.

摘要翻译： 提供一种半导体器件及其制造方法，其中半导体器件包括其中形成有沟槽的半导体衬底，设置在沟槽的下部内部的底部电极，底部电极具有不均匀的上表面，绝缘体 形成在所述底部电极的上部和所述沟槽的侧壁上的层，以及设置在所述沟槽内部的所述底部电极的上部的顶部电极，所述顶部电极具有不平坦的顶部电极，其中所述顶部 电极被配置成使得顶部电极朝向中心部分倾斜。

公开(公告)号：US08513705B2

公开(公告)日：2013-08-20

申请号：US12923126

申请日：2010-09-03

申请人： Jong-seob Kim ,  Ki-ha Hong ,  Jae-joon Oh ,  Hyuk-soon Choi ,  In-jun Whang ,  Jai-kwang Shin

发明人： Jong-seob Kim ,  Ki-ha Hong ,  Jae-joon Oh ,  Hyuk-soon Choi ,  In-jun Whang ,  Jai-kwang Shin

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/207 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG channel is an off region where the density of a 2DEG is reduced or zero. The entire upper material layer may be continuous and may have a uniform thickness. A region of the upper material layer under the gate contains an impurity for reducing or eliminating a lattice constant difference between the lower and upper material layers.

摘要翻译： 包括二维电子气体（2DEG）通道的电力电子装置及其制造方法。 电力电子设备包括用于形成2DEG通道的下部和上部材料层，以及与上部材料层的上表面接触的栅极。 2DEG通道的栅极下方的区域是2DEG的密度减小或为零的截止区域。 整个上部材料层可以是连续的并且可以具有均匀的厚度。 在栅极下方的上部材料层的区域包含用于减少或消除下部和上部材料层之间的晶格常数差的杂质。

公开(公告)号：US08487358B2

公开(公告)日：2013-07-16

申请号：US12654349

申请日：2009-12-17

申请人： Ki-ha Hong ,  Jong-seob Kim ,  Jai-kwang Shin

发明人： Ki-ha Hong ,  Jong-seob Kim ,  Jai-kwang Shin

IPC分类号： H01L29/82 ,  H01L29/94

CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F10/1936 ,  H01F10/3254

摘要： Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.

摘要翻译： 提供的是自旋场效应逻辑器件，逻辑器件包括：栅电极; 由栅电极上方的磁性材料形成的沟道，以选择性地透射自旋极化电子; 频道上的来源; 以及沟道上的漏极和输出电极，输出从源极发射的电子。 栅电极可以控制通道的磁化状态，以选择性地将从源引入的电子传输到通道。

公开(公告)号：US08480959B2

公开(公告)日：2013-07-09

申请号：US13065000

申请日：2011-05-02

申请人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

发明人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

IPC分类号： G01N27/04 ,  G01N30/62

CPC分类号： G01N29/036 ,  G01N2291/0257 ,  Y10S977/957

摘要： Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.

摘要翻译： 提供了一种化学传感器，其可以包括在基板上的第一电极，覆盖基板上的第一电极的感测构件和暴露感测构件的表面的感测构件的表面上的多个第二电极。 化学传感器可以被配置为当要感测的化合物吸附在感测构件上时测量电特性的变化。 还提供了包括化学传感器阵列的化学传感器阵列。

公开(公告)号：US08471640B2

公开(公告)日：2013-06-25

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03B17/00

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US08310014B2

公开(公告)日：2012-11-13

申请号：US13317734

申请日：2011-10-27

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L29/78

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

公开(公告)号：US20120112796A1

公开(公告)日：2012-05-10

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03K5/01

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US20120086049A1

公开(公告)日：2012-04-12

申请号：US13222322

申请日：2011-08-31

申请人： In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.

摘要翻译： 根据示例性实施例，高电子迁移率晶体管（HEMT）包括衬底，衬底上的缓冲层，缓冲层上的沟道层以及沟道层上的势垒结构。 缓冲层包括二维电子气（2DEG）。 势垒结构的极化在对应于栅电极的区域中变化。 HEMT还包括栅电极，源电极和屏障结构上的漏电极。

公开(公告)号：US20120037958A1

公开(公告)日：2012-02-16

申请号：US13208671

申请日：2011-08-12

申请人： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

发明人： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/66462

摘要： According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.

摘要翻译： 根据示例性实施例，功率电子器件包括第一半导体层，第一半导体层的第一表面上的第二半导体层以及第二半导体层上的源极，漏极和栅极。 源极，漏极和栅极彼此分开。 电力电子设备还包括在第一半导体层和第二半导体层之间的界面处的二维电子气体（2DEG）区域，栅极上的第一绝缘层和与第一绝缘层相邻的第二绝缘层。 第一绝缘层具有第一介电常数，第二绝缘层具有小于第一介电常数的第二介电常数。