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21 条记录 (耗时 0.019 秒)

    Pile lifting device capable of preventing overturning
    2.
    发明授权
    Pile lifting device capable of preventing overturning 有权

    公开(公告)号：US11718507B2

    公开(公告)日：2023-08-08

    申请号：US17753151

    申请日：2020-08-25

    申请人： Kyu Sang Kim

    发明人： Kyu Sang Kim

    IPC分类号： B66C1/66 ,  E02D13/04 ,  E02D11/00

    CPC分类号： B66C1/66 ,  E02D11/00 ,  E02D13/04

    摘要： A pile lifting chuck including a chuck housing which is inserted into an inner diameter of a pile and has extension-installing pockets vertically formed at predetermined intervals to face each other in a radial direction. The pile lifting chuck further includes a pair of extensions which are disposed in the pockets and installed to be movable in the radial direction and a chucking cylinder which has one end connected to any one of the extensions and the other end connected to the other one of the extensions and which is configured to, by using a reaction force on the any one of the extensions, move the other one of the extensions to chuck the pile.

    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
    3.
    发明授权
    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same 失效
    具有晶片结合结构的半导体激光二极管及其制造方法

    公开(公告)号：US07773649B2

    公开(公告)日：2010-08-10

    申请号：US11878347

    申请日：2007-07-24

    申请人： Kyu-sang Kim ,  Kyoung-ho Ha

    发明人： Kyu-sang Kim ,  Kyoung-ho Ha

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S2301/173 ,  H01S2304/12

    摘要： Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.

    摘要翻译： 示例性实施例涉及半导体激光二极管及其制造方法。 半导体激光二极管可以包括形成在第一基板上并且能够发光的第一半导体层，以及能够引导发射的光的第二半导体层，其中第一和第二半导体层彼此接合。 制造半导体激光二极管的方法可以包括在第一衬底上形成能够发光的第一半导体层，在第二衬底上形成能够引导光的第二半导体层，将第一半导体层接合到第二半导体层， 并移除第二基板。 第二半导体层可以在与用于形成第一半导体层的条件不同的条件下单独生长，并且可以随后结合到第一半导体层。

    PILE LIFTING DEVICE CAPABLE OF PREVENTING OVERTURNING
    4.
    发明申请
    PILE LIFTING DEVICE CAPABLE OF PREVENTING OVERTURNING 有权

    公开(公告)号：US20220274807A1

    公开(公告)日：2022-09-01

    申请号：US17753151

    申请日：2020-08-25

    申请人： Kyu Sang KIM

    发明人： Kyu Sang KIM

    IPC分类号： B66C1/66 ,  E02D13/04 ,  E02D11/00

    摘要： The present disclosure provides a pile lifting device capable of preventing the overturning of piles that can lift piles by chucking the piles using hydraulic pressure and prevent the overturning of the piles even when chucking is released during lifting, thus preventing accidents. According to an embodiment of the present disclosure, the pile lifting device capable of preventing the overturning of piles, which is connected to lifting equipment and used to lift piles, includes a balance plate which is connected to the lifting equipment to maintain a horizontal balance and a pile lifting chuck which is connected to the balance plate directly or via a plurality of first lifting cable and inserted into an upper inner diameter portion of the pile to hold the pile using a hydraulic force.

    HYDRAULIC JACK EXPANSION-TYPE ROTARY PENETRATION DEVICE FOR CIRCULAR PIPE
    5.
    发明申请
    HYDRAULIC JACK EXPANSION-TYPE ROTARY PENETRATION DEVICE FOR CIRCULAR PIPE 有权

    公开(公告)号：US20210010219A1

    公开(公告)日：2021-01-14

    申请号：US16500050

    申请日：2018-04-05

    申请人： Kyu Sang KIM

    发明人： Kyu Sang KIM

    IPC分类号： E02D7/22 ,  E02D5/58

    摘要： A hydraulic jack expansion-type rotary penetration device for a circular pipe comprises: a rotating head which receives torque from the outside; one or more hollow shafts arranged in series downward along the central axis of the rotating head; shaft-connection socket which interconnect the first hollow shaft which is connected to the rotating head with the remaining adjacent hollow shafts, to thereby transmit the torque of the rotating head; and one or more clamp modules which are installed in the hollow shafts and pressed against the inner surface of the circular pipe by hydraulic pressure generated in the rotating head to thereby generate clamping force.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120104439A1

    公开(公告)日：2012-05-03

    申请号：US13173392

    申请日：2011-06-30

    申请人： Kyu Sang KIM

    发明人： Kyu Sang KIM

    IPC分类号： H01L33/50

    CPC分类号： H01L33/501 ,  H01L33/08 ,  H01L33/20 ,  H01L33/505 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.

    摘要翻译： 半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 以及波长转换层，形成在由包含荧光体颗粒的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。 半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 以及波长转换层，其形成在由包含荧光体颗粒或量子点的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。