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27 条记录 (耗时 0.045 秒)

    Confinement of E-fields in high density ferroelectric memory device structures
    4.
    发明授权
    Confinement of E-fields in high density ferroelectric memory device structures 失效
    限制高密度铁电存储器件结构中的电场

    公开(公告)号：US06511856B2

    公开(公告)日：2003-01-28

    申请号：US09893155

    申请日：2001-06-27

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    IPC分类号： H01L2100

    CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/28568 ,  H01L28/55

    摘要： A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element. Such E-fields confinement may be effected by fabrication of the device structure including: (a) patterning the stack capacitor, and depositing a non-ferroelectric, high &egr; material layer over and on the sides of the stack capacitor; (b) forming the stack capacitor without patterning the ferroelectric material and rendering a portion of the material non-ferroelectric in character; or (c) forming the ferroelectric stack capacitor with an aspect ratio, of effective lateral dimension d of the ferroelectric capacitor material element to thickness t of the ferroelectric capacitor material element, that is greater than 5, with d and t being measured in same dimensional units.

    摘要翻译： 一种强电介质电容器器件结构，包括铁电堆叠电容器，该铁电体堆叠电容器包括位于绝缘体层下方的包含埋入晶体管电路的衬底上的铁电材料电容器元件，所述绝缘体层具有其中包含导体插塞到晶体管电路的通孔，其中电场被结构地局限于 铁电电容材料元件。 这样的电场限制可以通过制造器件结构来实现，该器件结构包括：（a）图案化叠层电容器，以及在堆叠电容器的两侧和之上沉积非铁电的高ε材料层; （b）形成堆叠电容器，而不对铁电材料进行构图，并使材料的一部分非铁电性能; 或（c）形成强电介质电容器材料元素的有效横向尺寸d与铁电电容器材料元件的厚度t的长宽比大于5的铁电堆叠电容器，其中d和t以相同的尺寸被测量 单位。

    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
    5.
    发明授权
    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer 失效
    液体输送系统，用于液体输送系统的加热器装置和蒸发器

    公开(公告)号：US5882416A

    公开(公告)日：1999-03-16

    申请号：US878616

    申请日：1997-06-19

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Ralph J. Carl, Jr.

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Ralph J. Carl, Jr.

    IPC分类号： C23C16/448 ,  H01L21/31 ,  C23C16/00 ,  H05B3/00 ,  H05B3/40

    CPC分类号： C23C16/448

    摘要： A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system. The liquid delivery system includes: (a) an elongate vaporization fluid flow passage defining a longitudinal axis and bounded by an enclosing wall to define a cross-section of the fluid flow passage transverse to the longitudinal axis; (b) a vaporization element contained within the fluid flow passage transverse to the longitudinal axis; a source reagent liquid feed passage having a terminus arranged to discharge liquid in a direction perpendicular to a facing surface of the vaporization element; (d) a heating means for heating the vaporization element to a temperature for vaporization of the liquid reagent; and (e) a manifold for flowing vapor formed by vaporization of the liquid reagent on the vaporization element from the fluid flow passage to the chemical vapor deposition reactor, in which the manifold including a diverting means to prevent non-volatile residue from flowing to the chemical vapor deposition reactor. A heater assembly may be employed for heating a component of the liquid delivery system, and the system may utilize a replaceable vaporizer cap removably engageable with the vaporization chamber.

    摘要翻译： 一种液体输送系统，用于将蒸发的初始液体试剂输送到与液体输送系统成蒸汽接收关系的化学气相沉积反应器。 液体输送系统包括：（a）细长的蒸发流体流动通道，其限定纵向轴线并由封闭壁限定，以限定横向于纵向轴线的流体流动通道的横截面; （b）流体流动通道内包含的横向于纵向轴线的蒸发元件; 源试剂液体供给通道，其具有设置成沿垂直于汽化元件的相对表面的方向排出液体的末端; （d）加热装置，用于将蒸发元件加热到液体试剂的蒸发温度; 和（e）用于流动由蒸发元件上的液体试剂从流体流动通道蒸发到化学气相沉积反应器而形成的蒸汽的歧管，其中歧管包括转移装置，以防止非挥发性残余物流向 化学气相沉积反应器。 可以使用加热器组件来加热液体输送系统的部件，并且系统可以使用可移除地与蒸发室接合的可更换的蒸发器盖。

    HIGH-K PEROVSKITE MATERIALS AND METHODS OF MAKING AND USING THE SAME
    6.
    发明申请
    HIGH-K PEROVSKITE MATERIALS AND METHODS OF MAKING AND USING THE SAME 审中-公开
    高K薄膜材料及其制造和使用方法

    公开(公告)号：US20140134823A1

    公开(公告)日：2014-05-15

    申请号：US14128043

    申请日：2012-06-19

    申请人： Bryan C. Hendrix ,  Steven M. Bilodeau ,  Ing-Shin Barry Chen ,  Jeffrey F. Roeder ,  Gregory T. Stauf

    发明人： Bryan C. Hendrix ,  Steven M. Bilodeau ,  Ing-Shin Barry Chen ,  Jeffrey F. Roeder ,  Gregory T. Stauf

    IPC分类号： H01L49/02 ,  H01L27/108

    CPC分类号： H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

    摘要： High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material-forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

    摘要翻译： 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与具有比形成钙钛矿材料的金属前体中的金属物质更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; Sr（Sn，Ru）O3; 和Sr（Sn，Ti）O 3。

    PRECURSORS FOR SILICON DIOXIDE GAP FILL
    10.
    发明申请
    PRECURSORS FOR SILICON DIOXIDE GAP FILL 有权
    硅二氧化硅填料的前身

    公开(公告)号：US20100164057A1

    公开(公告)日：2010-07-01

    申请号：US12665929

    申请日：2008-06-27

    申请人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    发明人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC分类号： H01L29/06 ,  C09D7/00 ,  H01L21/762

    CPC分类号： H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    摘要： A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译： 一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底和沟槽中的完整填充质量的二氧化硅，其中二氧化硅具有基本上无空隙的特性，并且在其整个体积中具有基本均匀的密度 质量 描述了制造半导体产品的相应方法，其涉及使用特定的硅前体组合物，用于完全填充微电子器件衬底的沟槽，其中二氧化硅前体组合物被处理以进行水解和缩合反应，以形成基本上 在沟槽中的无空隙和基本均匀的密度二氧化硅材料。 填充过程可以用包括硅和锗的前体填充组合物进行，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，例如甲醇，以消除或最小化固化沟槽填充材料中的接缝形成。