Abstract:
FIG. 1 is a perspective view of a mousetrap, showing my new design; FIG. 2 is another perspective view thereof; FIG. 3 is a front view thereof; FIG. 4 is a rear view thereof; FIG. 5 is a left side view thereof; FIG. 6 is a right side view thereof; FIG. 7 is a top plan view thereof; and, FIG. 8 is a bottom plan thereof. The broken line showing of portions of the mousetrap is included for the purpose of illustrating only and forms no part of the claimed design.
Abstract:
A least decentralized fund trading system includes a money pool database and a fund transaction processing system. The money pool database includes an accommodator account and participant accounts. The fund transaction processing system includes a fund matching module, a clearing and settlement module and an encrypted packaging module. The fund matching module matches the transaction-term orders and generates bid/ask matching information. The clearing and settlement module is to perform a clearing process and a settlement process upon the bid/ask matching information with respect to corresponding transaction-term orders and the corresponding participant accounts. The encrypted packaging module bases on a time series of the transaction record to record the transaction receipt or the balance receipt into ledger information, and the encrypted packaging module performs an encryption process upon the ledger information so as to obtain a total root encryption value. In addition, a least decentralized fund trading method is provided.
Abstract:
A stanchion capable of providing prompted information comprises a post and a prompt device disposed in the post. The prompt device senses the queuing state and outputs the prompted information corresponding to the queuing state. Hence, the stanchion offers information favorable for the queue such as waiting time and other helpful functions available for being applied to prompt people in the queue as well in addition to partitioning the moving line of the queue.
Abstract:
In accordance with embodiments disclosed herein, there are provided apparatuses, systems and methods for implementing upstream power control for DSL communications. For example, such a system may include means for: dividing a plurality of DSL lines into a first group of DSL lines and a second group of DSL lines based on characteristics common to each of the DSL lines within the respective first and second groups; determining attainable upstream data rates for the first and second groups of DSL lines according to the characteristics of each group; selecting upstream power control parameters to apply to each of the first and second groups of DSL lines based on the attainable upstream data rates determined; and instructing the DSL lines of the first and second groups to adopt the selected upstream power control parameters. Other related embodiments are disclosed.
Abstract:
Methods and apparatus for detecting errors in real time in CMP processing. A method includes disposing a semiconductor wafer onto a wafer carrier in a tool for chemical mechanical polishing (“CMP”); positioning the wafer carrier so that a surface of the semiconductor wafer contacts a polishing pad mounted on a rotating platen; dispensing an abrasive slurry onto the rotating polishing pad while maintaining the surface of the semiconductor wafer in contact with the polishing pad to perform a CMP process on the semiconductor wafer; in real time, receiving signals from the CMP tool into a signal analyzer, the signals corresponding to vibration, acoustics, temperature, or pressure; and comparing the received signals from the CMP tool to expected received signals for normal processing by the CMP tool; outputting a result of the comparing. A CMP tool apparatus is disclosed.
Abstract:
A manufacture includes a substrate, a reinforcement layer over the substrate, and abrasive particles over the substrate. The abrasive particles are partially buried in the reinforcement layer. Upper tips of the abrasive particles are substantially coplanar.
Abstract:
Provided is a method and structure for utilizing advance channel substrate materials in semiconductor manufacturing. Advanced channel substrate materials such as germanium and Group III-V channel substrate materials, are advantageously utilized. One or more capping films including at least a nitride layer are formed over the channel substrate prior to patterning, ion implantation and the subsequent stripping and wet cleaning operations. With the capping layers intact during these operations, attack of the channel substrate material is prevented and the protective films are easily removed subsequently. The films are dimensioned in conjunction with the ion implantation operation to enable the desired dopant profile and concentration to be formed in the channel substrate material.
Abstract:
Disclosed are systems, methods and computer program products for traffic volume reporting during radio access network (RAN) connection setup. In one aspect, the RAN broadcasts an indicator that it accepts traffic volume measurements (TVM) from access terminals (ATs) and an associated TVM threshold. An AT measures its traffic volume before requesting a connection with the RAN. If the traffic volume is above the threshold, AT transmits to the RAN a connection request containing a TVM indicator that the measured traffic volume from the AT is above the threshold. If the traffic volume is below the threshold, AT transmits to the RAN a connection request containing a TVM indicator that the traffic volume is below the threshold.
Abstract:
An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.