公开(公告)号：US20070010072A1

公开(公告)日：2007-01-11

申请号：US11482887

申请日：2006-07-07

申请人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

发明人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

IPC分类号： H01L21/20

CPC分类号： C23C16/54 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45504 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

摘要： A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.

摘要翻译： 一批晶片基板设置有每个晶片基板具有表面。 每个表面涂覆有同时施加到每批晶片衬底的表面的一层材料。 该材料层被施加到在整个表面上变化小于四个厚度百分比的厚度，而不是边缘边界，并且晶片到晶片的厚度变化小于3％。 如此施加的材料层是氧化硅，氮化硅或氮氧化硅，其中该材料层不含碳和氯。 氧化硅或氮氧化硅的形成需要包含共反应物。 氮化氮也通过包含硝化共反应物形成。 用于形成这样一批晶片衬底的方法包括将前体进料到含有一批晶片衬底的反应器中，并在足以产生这种材料层的晶片衬底温度，总压力和前体流速下使前体反应。 根据需要通过具有多个孔的垂直管注射器输送前体和共反应物，其中至少一个孔与反应器内的每批晶片基板和出口狭缝对齐，以产生跨过每个晶片的表面的流动 该批次中的衬底提供了晶片内和晶片与晶片之间的均匀性。

公开(公告)号：US20100117203A1

公开(公告)日：2010-05-13

申请号：US11668626

申请日：2007-01-30

申请人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

发明人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

IPC分类号： H01L29/04 ,  H01L21/316 ,  H01L21/26 ,  H01L21/314

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02326 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/67109

摘要： A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

摘要翻译： 提供了一种从硅形成含氧化物的膜的方法，其包括将硅衬底加热至250℃至1100℃的工艺温度，同时进入双原子还原源气体ZZ'的处理室，其中Z和 Z'分别为H，D和T以及稳定的氧化物离子源。 沿着处理室的垂直范围存在多个排气口以在流动上产生反应物。 提供了一批具有多个硅基层的硅衬底，每个硅基层具有暴露的110和100平面，并且在低于600℃的温度下形成与膜相关的膜残余应力。 并且在<100>结晶平面上具有超过100薄膜厚度的<110>薄膜厚度小于20％，或薄膜特征为厚度各向异性小于18％，电击穿场大于10.5MV /厘米。

公开(公告)号：US20050098107A1

公开(公告)日：2005-05-12

申请号：US10947426

申请日：2004-09-21

申请人： Dale Du Bois ,  Cole Porter ,  Martin Mogaard ,  Robert Bailey

发明人： Dale Du Bois ,  Cole Porter ,  Martin Mogaard ,  Robert Bailey

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  F27B20060101 ,  H01L21/00 ,  H01L21/677

CPC分类号： C23C16/4584 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67757

摘要： An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes a cross-flow liner to improve gas flow uniformity across the surface of each substrate. The cross-flow liner of the present invention includes a longitudinal bulging section to accommodate a cross-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.

摘要翻译： 提供了用于热处理保持在载体中的基板的装置。 该装置包括横流衬套，以改善穿过每个衬底表面的气流均匀性。 本发明的横流衬套包括纵向凸起部分以适应横流注入系统。 将衬垫图案化并定尺寸使其与晶片载体保持一致，结果减小衬垫和晶片载体之间的间隙，以减少或消除晶片载体和衬垫内部之间的间隙区域中的涡流和停滞 壁。

公开(公告)号：US20060159847A1

公开(公告)日：2006-07-20

申请号：US11239880

申请日：2005-09-30

申请人： Cole Porter ,  Karl Williams ,  Helmuth Treichel

发明人： Cole Porter ,  Karl Williams ,  Helmuth Treichel

IPC分类号： C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45578

摘要： In one aspect, the present invention provides a method and apparatus configured to form dielectric films or layers at low temperature. In one embodiment dielectric films such as silicon nitride (SixNy) and silicon dioxide (SiO2) are deposited at temperatures equal to or below 550° C. In a further aspect of the present invention, a method and apparatus configured to provide cross flow injection of reactant gases is provided. In one embodiment, reactant gasses (such as a monomolecular precursor and NH3) flow into vertically positioned adjustable injectors that mix reactants prior to injection into the wafer region.

摘要翻译： 一方面，本发明提供一种被配置为在低温下形成介电膜或层的方法和装置。 在一个实施例中，在等于或低于550℃的温度下沉积诸如氮化硅（SixNy）和二氧化硅（SiO 2）之类的电介质膜。在本发明的另一方面，一种方法和 提供了构造成提供反应气体的横流注入的装置。 在一个实施方案中，反应物气体（例如单分子前体和NH 3）流入垂直定位的可调喷射器，其在注入晶片区域之前将反应物混合。

公开(公告)号：US06864466B2

公开(公告)日：2005-03-08

申请号：US10095974

申请日：2002-03-08

申请人： Cole Porter ,  Alan L. Starner

发明人： Cole Porter ,  Alan L. Starner

IPC分类号： F27D11/00 ,  H01L21/00 ,  H05B1/02

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： A system and method of minimizing stress related to the ramp rate of a variable by limiting the ramp rate as a function of the current value of the variable is provided. More specifically, the present invention provides a system and method of maintaining the radial delta temperature of a semiconductor substrate or other heated body below the crystal slip curve by dynamically controlling the temperature ramp rate during processing.

摘要翻译： 提供了通过将斜率作为变量的当前值的函数来限制与变量斜坡率相关的压力最小化的系统和方法。 更具体地，本发明提供一种通过在处理期间动态地控制温度升高速率来将半导体衬底或其他加热体的径向增量温度维持在晶体滑移曲线下方的系统和方法。

公开(公告)号：US07109131B2

公开(公告)日：2006-09-19

申请号：US10456850

申请日：2003-06-06

申请人： Robert B. Herring ,  Cole Porter ,  Travis Dodwell ,  Ed Nazareno ,  Chris Ratliff ,  Anindita Chatterji

发明人： Robert B. Herring ,  Cole Porter ,  Travis Dodwell ,  Ed Nazareno ,  Chris Ratliff ,  Anindita Chatterji

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  C23C16/00

CPC分类号： H01L21/32105 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L29/4941

摘要： The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

摘要翻译： 本发明一般涉及半导体制造。 更具体地，本发明涉及相对于在半导体衬底上形成的另一种材料选择性地氧化一种材料的系统和方法。 提供了一种用于执行该方法的富氢氧化系统，其中包括创新的安全特征以避免在富含氢气氛的情况下固有的人员和设备的危险。

公开(公告)号：US20050121145A1

公开(公告)日：2005-06-09

申请号：US10946849

申请日：2004-09-21

申请人： Dale Du Bois ,  Cole Porter ,  Robert Herring

发明人： Dale Du Bois ,  Cole Porter ,  Robert Herring

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L20060101

CPC分类号： C23C16/4584 ,  C23C16/45508 ,  C23C16/45578

摘要： An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an injection system which provides for selectable injection of gases to the process chamber. The injection system comprises one or more elongated injection tubes having a plurality of injection ports or orifices distributed in the tubes for directing flow of reactant and other gases across the surface of each substrate. The elongated injection tubes are rotatable about an axis in 360 degrees.

摘要翻译： 提供了用于热处理保持在载体中的基板的装置。 该装置包括一个注射系统，其提供可选择地向处理室注入气体。 注射系统包括一个或多个细长注射管，其具有分布在管中的多个注射口或孔，用于引导反应物和其它气体流过每个基底的表面。 细长的注射管可绕360度旋转。