公开(公告)号：US08657957B2

公开(公告)日：2014-02-25

申请号：US12564197

申请日：2009-09-22

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03B19/095 ,  C30B11/002 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98.

摘要翻译： 通过使用设置在模具的旋转轴周围的电极的电弧放电加热熔融成型为模具的玻璃状二氧化硅粉末压块，制造石英坩埚的方法包括以下步骤：将电极布置成环形，并设置 电极前端与玻璃状二氧化硅粉末的表面之间的水平距离W的比W / R与电石加压时的至少一定时间成形为玻璃状二氧化硅粉末的开口半径R的比例为 0.002〜0.98。

公开(公告)号：US08416833B2

公开(公告)日：2013-04-09

申请号：US12563374

申请日：2009-09-21

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

IPC分类号： C03B5/027 ,  C03B19/01 ,  C03B19/06

CPC分类号： H05B7/085 ,  C03B19/095

摘要： An arc discharge method includes the steps of heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in a output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 and 0.9.

摘要翻译： 电弧放电方法包括以下步骤：使用多个碳电极在300〜12000kVA的输出范围内通过电弧放电来加热和熔融非导电物体; 并且在电弧放电开始期间设定碳电极彼此接触的接触位置与前端与碳电极的直径之间的距离的比率在0.001和0.9的范围内。

公开(公告)号：US08053080B2

公开(公告)日：2011-11-08

申请号：US12768904

申请日：2010-04-28

申请人： Masanori Fukui ,  Takahiro Satoh

发明人： Masanori Fukui ,  Takahiro Satoh

IPC分类号： B32B13/04 ,  B32B17/06 ,  A47G19/22

CPC分类号： C30B35/002 ,  C03B19/1065 ,  C03B2201/04 ,  C03B2201/20 ,  C03C1/026 ,  C30B15/10 ,  Y10T117/10 ,  Y10T428/13 ,  Y10T428/131 ,  Y10T428/1317

摘要： A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C.

摘要翻译： 本发明提供可以使石英玻璃制品在熔融时几乎不具有气泡的合成石英粉末的改性方法，以及使用所述改性石英粉末的合成石英粉末和玻璃制品的改性方法， 至少在降温过程中，将合成石英粉保存在氦气氛中，当通过溶胶 - 凝胶法制造的无定形合成石英粉末在真空炉中通过在脱气温度下进行热处理并且小于 烘烤温度，其中氦气氛中的最高温度优选设定为大于700℃至小于1400℃，氦气保持在小于400℃。

公开(公告)号：US20110241068A1

公开(公告)日：2011-10-06

申请号：US13074333

申请日：2011-03-29

申请人： Yuuji WATANABE ,  Masanori FUKUI ,  Michiaki MARUOKA

发明人： Yuuji WATANABE ,  Masanori FUKUI ,  Michiaki MARUOKA

IPC分类号： H01L29/739 ,  H01L21/332

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/47 ,  H01L29/66712 ,  H01L29/7395

摘要： A semiconductor device which can make the generation of gate parasitic oscillations more difficult than a semiconductor device of the related art is provided. The semiconductor device includes: a drift layer which is constituted of a reference concentration layer and a low concentration layer; a gate electrode structure; a pair of source regions, a pair of base regions, and depletion-layer extension regions which are formed in the reference concentration layer below the base regions, wherein the depletion-layer extension regions are formed such that a lower surface of the depletion-layer extension region is deeper than a boundary between the low concentration layer and the reference concentration layer and projects into the low concentration layers, and a dVDS/dt-decreasing diffusion layer which contains an n-type impurity at a concentration higher than the concentration of the impurity which the reference concentration layer contains and decreases dVDS/dt when the semiconductor device is turned off is formed on a surface of the reference concentration layer.

摘要翻译： 提供了可以使栅极寄生振荡的产生比现有技术的半导体器件困难的半导体器件。 半导体器件包括：漂移层，其由参考浓度层和低浓度层构成; 栅电极结构; 一对源极区域，一对基极区域和耗尽层延伸区域，其形成在基极区域下方的参考浓度层中，其中形成耗尽层延伸区域，使得耗尽层的下表面 延伸区域比低浓度层和参考浓度层之间的边界深，并且投入到低浓度层中，并且含有浓度高于低浓度层的浓度的n型杂质的dVDS / dt减小扩散层 在参考浓度层的表面上形成半导体器件截止时参考浓度层包含并降低dVDS / dt的杂质。

公开(公告)号：US07905112B2

公开(公告)日：2011-03-15

申请号：US10628350

申请日：2003-07-29

申请人： Masanori Fukui ,  Masaru Satoh

发明人： Masanori Fukui ,  Masaru Satoh

IPC分类号： C03B19/00

CPC分类号： C03B32/00 ,  C03B19/095 ,  C03B29/02 ,  C30B15/10

摘要： A reforming process of a quartz glass crucible in which the quartz glass crucible is reformed by an arc discharge generated by electrodes positioned around a rotational axis and configured to heat an inside surface of the crucible while the crucible is rotated. The process includes arranging electrodes in an electrode structure such that neighboring electrodes are positioned at regular intervals in a ring-like configuration; forming a stable ring-like arc between the neighboring electrodes, without generating a continuous arc between electrodes facing each other across a central portion of the ring-like configuration; heating the inside surface of the crucible; and removing a foreign substance located on the inside surface of the crucible or a bubble located under the inside surface of the crucible.

摘要翻译： 一种石英玻璃坩埚的重整工艺，其中石英玻璃坩埚通过由位于旋转轴线周围的电极产生的电弧放电而重构，并且构造成在坩埚旋转的同时加热坩埚的内表面。 该方法包括在电极结构中布置电极，使得相邻的电极以规定的间隔以环状构造定位; 在相邻电极之间形成稳定的环状电弧，而不会在环状构造的中心部分彼此面对的电极之间产生连续的电弧; 加热坩埚的内表面; 并且去除位于坩埚内表面上的异物或位于坩埚内表面下方的气泡。

公开(公告)号：US20100326349A1

公开(公告)日：2010-12-30

申请号：US12786911

申请日：2010-05-25

申请人： Masanori FUKUI ,  Hideki WATANABE ,  Nobumitsu TAKASE

发明人： Masanori FUKUI ,  Hideki WATANABE ,  Nobumitsu TAKASE

IPC分类号： C30B15/20 ,  C30B15/16 ,  C30B15/10

CPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06

摘要： Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring change of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside a vitreous silica crucible; devitrifying an inner surface of the vitreous silica crucible as supplying voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period; and growing a silicon single crystal by slowly pulling the seed crystal as supplying voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period.

摘要翻译： 监测硅熔体的泄漏，并检测硅熔体中的晶种的接触，此外，长时间拉伸和降低硅单晶的杂质浓度可以耐久的石英玻璃坩埚的增强可以是 预期。 提供了制造硅单晶的方法。 该方法包括：通过使用坩埚侧作为负极并且线侧作为正极​​来提供电压V1，并通过监视电压的变化来检测硅熔体处的晶种的触摸状态 导线的末端触及石英玻璃坩埚内的硅熔体; 在温度控制期间，使用坩埚侧作为正极​​而将作为负极的线侧作为供给电压V2而使玻璃状石英玻璃坩埚的内表面失透; 并且通过在坩埚侧作为负极并且在温度控制周期之后将线侧作为正极​​，通过缓慢地拉晶晶体作为供给电压V3来生长硅单晶。

公开(公告)号：US20100212582A1

公开(公告)日：2010-08-26

申请号：US12768904

申请日：2010-04-28

申请人： Masanori FUKUI ,  Takahiro SATOH

发明人： Masanori FUKUI ,  Takahiro SATOH

IPC分类号： C30B35/00

CPC分类号： C30B35/002 ,  C03B19/1065 ,  C03B2201/04 ,  C03B2201/20 ,  C03C1/026 ,  C30B15/10 ,  Y10T117/10 ,  Y10T428/13 ,  Y10T428/131 ,  Y10T428/1317

摘要： A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C.

摘要翻译： 本发明提供可以使石英玻璃制品在熔融时几乎不具有气泡的合成石英粉末的改性方法，以及使用所述改性石英粉末的合成石英粉末和玻璃制品的改性方法， 至少在降温过程中，将合成石英粉保存在氦气氛中，当通过溶胶 - 凝胶法制造的无定形合成石英粉末在真空炉中通过在脱气温度下进行热处理并且小于 烘烤温度，其中氦气氛中的最高温度优选设定为大于700℃至小于1400℃，氦气保持在小于400℃。

公开(公告)号：US20100178855A1

公开(公告)日：2010-07-15

申请号：US12687264

申请日：2010-01-14

申请人： Masanori FUKUI ,  Minoru SHIRAKAWA ,  Tadashi NEMOTO ,  Tadashi SATO

发明人： Masanori FUKUI ,  Minoru SHIRAKAWA ,  Tadashi NEMOTO ,  Tadashi SATO

IPC分类号： B24B5/14 ,  B24B5/36

CPC分类号： C03B19/095 ,  B24B19/16 ,  H05B7/085

摘要： A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode.

摘要翻译： 用于使电弧放电碳电极的前端成形的碳电极研磨装置设置有前端研磨刀片，其被配置为研磨碳电极的前端表面，侧面研磨刀片被构造成从前端表面研磨表面到 碳电极的基端，以及旋转装置，被配置为围绕与碳电极的轴线重合的旋转轴线旋转并驱动前端研磨刀片和侧面研磨刀片。

公开(公告)号：US20100095881A1

公开(公告)日：2010-04-22

申请号：US12253500

申请日：2008-10-17

申请人： Masanori FUKUI ,  Koichi SUZUKI ,  Takeshi FUJITA

发明人： Masanori FUKUI ,  Koichi SUZUKI ,  Takeshi FUJITA

IPC分类号： C30B15/00 ,  C25B11/12 ,  C30B15/10

CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032

摘要： The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm3 to 1.80 g/cm3, and variability in density among the carbon electrodes is 0.2 g/cm3 or less. The carbon particles that constitute the carbon electrodes preferably have a particle diameter of 0.3 mm or less.

摘要翻译： 电弧放电装置包括连接到用于加热二氧化硅粉末的电源的各相的多个碳电极，并且通过在碳电极之间产生电弧放电使其熔化。 所有碳电极的密度范围为1.30g / cm 3至1.80g / cm 3，碳电极之间的密度变化率为0.2g / cm 3以下。 构成碳电极的碳粒子的粒径优选为0.3mm以下。

公开(公告)号：US06911080B2

公开(公告)日：2005-06-28

申请号：US10682112

申请日：2003-10-10

申请人： Hiroshi Kishi ,  Minoru Kanda ,  Masanori Fukui

发明人： Hiroshi Kishi ,  Minoru Kanda ,  Masanori Fukui

IPC分类号： C03B20/00 ,  C30B15/10 ,  C30B15/20 ,  C30B15/22 ,  C30B29/06 ,  C30B35/00 ,  G01N33/38

CPC分类号： C30B15/10 ,  C30B35/002 ,  G01N33/386 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1032 ,  Y10T428/131 ,  Y10T428/1314

摘要： A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.

摘要翻译： 在石英玻璃坩埚中保存的硅熔体表面的振动水平的评价过程通过在真空炉中放置，将石英玻璃试样从石英玻璃坩埚切出，熔化少量硅 在所述玻璃片上测量硅熔体的振动周期。 此外，还提供了不引起保持在石英玻璃坩埚中的硅熔体表面的振动的石英玻璃坩埚，其中坩埚侧壁的石英玻璃的振动周期被控制在大于1/6 秒。