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    Vitreous silica crucible for pulling silicon single crystal
    2.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal 有权
    硅玻璃坩埚用于拉硅单晶

    公开(公告)号：US08715415B2

    公开(公告)日：2014-05-06

    申请号：US12752374

    申请日：2010-04-01

    申请人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    发明人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/002

    摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.

    摘要翻译： 本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。 石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。 不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上 小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。 包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大 有助于在稍后的拉动阶段坩埚的保温性能。

    Vitreous silica crucible for pulling single-crystal silicon
    4.
    发明授权
    Vitreous silica crucible for pulling single-crystal silicon 有权
    用于拉拔单晶硅的玻璃状硅石坩埚

    公开(公告)号：US08142565B2

    公开(公告)日：2012-03-27

    申请号：US12325033

    申请日：2008-11-28

    申请人： Hiroshi Kishi ,  Minoru Kanda

    发明人： Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10 ,  C30B15/00

    CPC分类号： C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.

    摘要翻译： 一种玻璃状石英玻璃坩埚，其用于拉拔由玻璃状二氧化硅形成的具有有底圆筒形状的单晶硅，其中，在坩埚内表面的液面移动范围内，从对应于液面的位置 在完成拉伸单晶硅时，将单晶硅拉出到对应于硅熔体的液面的位置时的硅熔体的水平，包括OH基的浓度 坩埚的内表面的侵蚀厚度部分的玻璃态二氧化硅的含量高于低于位于液面移动范围以下的液面的范围。

    Silica glass crucible
    5.
    发明授权
    Silica glass crucible 有权
    二氧化硅玻璃坩埚

    公开(公告)号：US08449676B2

    公开(公告)日：2013-05-28

    申请号：US12430311

    申请日：2009-04-27

    申请人： Masanori Fukui ,  Hiroshi Kishi

    发明人： Masanori Fukui ,  Hiroshi Kishi

    IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B15/10 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.

    摘要翻译： 具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层 和在侧壁部和底部构成外层的天然石英玻璃层。 第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。 第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

    Vitreous silica crucible manufacturing apparatus
    6.
    发明授权
    Vitreous silica crucible manufacturing apparatus 有权
    硅玻璃坩埚制造设备

    公开(公告)号：US08240169B2

    公开(公告)日：2012-08-14

    申请号：US12684178

    申请日：2010-01-08

    申请人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

    发明人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

    IPC分类号： C03B19/06 ,  H05B7/22

    CPC分类号： C03B19/095 ,  H05B7/085

    摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

    摘要翻译： 玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME 有权
    用于拉丝硅单晶的耐火二氧化硅巧克力及其制造方法

    公开(公告)号：US20120160159A1

    公开(公告)日：2012-06-28

    申请号：US13394284

    申请日：2010-08-10

    申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    IPC分类号： C30B15/10 ,  C03B20/00

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE
    9.
    发明申请
    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 审中-公开
    用于制造维生素二氧化硅可溶性的装置

    公开(公告)号：US20120141622A1

    公开(公告)日：2012-06-07

    申请号：US13308308

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    IPC分类号： B29C35/02

    CPC分类号： C03B19/095

    摘要： Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

    摘要翻译： 本发明提供一种制造石英玻璃坩埚的装置，其具有能够减少分隔壁与插入形成在隔壁中的通孔的电极之间的间隙的结构，同时使电极移动以调节电弧放电的加热温度。 板状分隔壁15被放置在旋转模具10的上方。用于加热和熔合的电极13被插入穿透厚度方向的通孔16中，并被引导到旋转模具10上。摆动单元40设置在 分隔壁15的上侧并围绕虚拟摇摆轴线P围绕电极13，并且虚拟摇摆轴线P穿过通孔16。

    High purity silica crucible by electrolytic refining, and its production method and pulling method
    10.
    发明授权
    High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
    高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法

    公开(公告)号：US07160387B2

    公开(公告)日：2007-01-09

    申请号：US10781682

    申请日：2004-02-20

    申请人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

    发明人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

    IPC分类号： C30B13/06

    CPC分类号： C03C3/06 ,  C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

    摘要翻译： 本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。 通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，纯度为 通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末 中空旋转模具的内表面。 该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化 二氧化硅粉末层外面。