公开(公告)号：US20130045596A1

公开(公告)日：2013-02-21

申请号：US13428494

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru MATSUI

发明人： Hajime EDA ,  Yukiteru MATSUI

IPC分类号： H01L21/306 ,  B24B29/00 ,  B24B51/00

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/107 ,  B24B37/245 ,  H01L21/31053 ,  H01L21/76224

摘要： According to one embodiment, a semiconductor device manufacturing method is provided. In the semiconductor device manufacturing method, a process target film is formed on a semiconductor substrate, and the surface of the process target film is polished by a CMP method. The CMP method comprises heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature, and bringing the surface of the process target film into contact with the polishing pad heated to the second temperature.

摘要翻译： 根据一个实施例，提供一种半导体器件制造方法。 在半导体器件制造方法中，在半导体衬底上形成工艺靶膜，并且通过CMP方法对工艺靶膜的表面进行抛光。 CMP方法包括将旋转抛光垫从第一温度加热到高于第一温度的第二温度，并使加工目标薄膜的表面与加热到第二温度的抛光垫接触。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US20110076833A1

公开(公告)日：2011-03-31

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/762 ,  H01L21/306

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20110070745A1

公开(公告)日：2011-03-24

申请号：US12775423

申请日：2010-05-06

申请人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

发明人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

IPC分类号： H01L21/3105 ,  B24B1/00 ,  B24B41/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： A polishing method includes performing conditioning process of injecting a conditioning agent onto a surface of a non-foam polishing pad arranged on a polishing table at a predetermined pressure, and polishing a surface of a polishing target while supplying a polishing slurry containing oxide particles and a surfactant onto the polishing pad, wherein an average of a residual cerium amount is equal to or smaller than 0.35 at % when a plurality of measurement regions, each 200 μm□ in area including the surface of the polishing pad, in a cross section of the polishing pad are measured after the conditioning process.

摘要翻译： 抛光方法包括进行将调理剂注入到以预定压力布置在抛光台上的非泡沫抛光垫的表面上的调节过程，并且在提供包含氧化物颗粒的抛光浆料的同时抛光抛光对象的表面， 表面活性剂在抛光垫上，其中当在包括抛光垫的表面的区域中的每个200μm□的多个测量区域中，残余铈量的平均值等于或小于0.35at％ 抛光垫在调理过程后进行测量。

公开(公告)号：US08575030B2

公开(公告)日：2013-11-05

申请号：US13196594

申请日：2011-08-02

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： H01L21/302

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US08114776B2

公开(公告)日：2012-02-14

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20120034846A1

公开(公告)日：2012-02-09

申请号：US13196594

申请日：2011-08-02

申请人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： B24B51/00

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US20090258493A1

公开(公告)日：2009-10-15

申请号：US12403979

申请日：2009-03-13

申请人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

发明人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  B24B37/044 ,  C09G1/02

摘要： A substance to be polished made of a silicon oxide film formed on a semiconductor substrate is chemically and mechanically polished and planarized by bringing the substance to be polished into contact with a polishing pad having a modulus of elasticity within a range of 400 to 600 megapascals and by relatively sliding the substance to be polished and the polishing pad, in a condition that a polishing pressure is within a range of 50 to 200 hectopascals and that a rotation number of the polishing pad is within a range of 10 to 80 rpm, and in a state that a polishing slurry containing cerium oxide particles and an anionic surfactant is supplied to the polishing pad.

摘要翻译： 通过使待研磨物质与400〜600兆帕的范围内的弹性模量的抛光垫接触，对在半导体基板上形成的氧化硅膜进行抛光的物质进行化学机械研磨和平坦化， 通过在抛光压力在50至200百帕斯卡范围内并且抛光垫的转数在10至80rpm的范围内，并且在 将含有氧化铈粒子和阴离子表面活性剂的研磨浆料供给到研磨垫的状态。

公开(公告)号：US20130290365A1

公开(公告)日：2013-10-31

申请号：US13980805

申请日：2011-11-29

申请人： Mitsuteru Tanoue ,  Hajime Eda ,  Yumiko Fujimoto

发明人： Mitsuteru Tanoue ,  Hajime Eda ,  Yumiko Fujimoto

IPC分类号： G06F17/30

CPC分类号： G06F16/24 ,  G06Q10/087 ,  G06Q50/04 ,  Y02P90/265 ,  Y02P90/30

摘要： In order to solve a problem to provide means for facilitating creation and management of a component table, there is provided a component management apparatus which arranges and manages components of a plurality of products, arranges and manages common components that are common in all of the plurality of products and optional components which are different for each product, associates and manages the optional components with specific requirements that are set for each product to determine whether to use the optional components, and manages specific requirements that are associated with each product and set for each product.

摘要翻译： 为了解决提供用于促进组件表的创建和管理的装置的问题，提供了一种组件管理装置，其配置和管理多个产品的组件，布置和管理所有多个公共组件中常见的公共组件 的每个产品不同的产品和可选组件，将可选组件关联并管理为每个产品设置的特定要求，以确定是否使用可选组件，并管理与每个产品相关联的特定要求并为每个产品设置 产品。

公开(公告)号：US20130095661A1

公开(公告)日：2013-04-18

申请号：US13428163

申请日：2012-03-23

申请人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

发明人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC分类号： H01L21/302 ,  B24B53/017 ,  B24B37/015 ,  B24B37/013 ,  B24B37/07

CPC分类号： H01L21/76224 ,  C09G1/02 ,  H01L21/31053

摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.

摘要翻译： 根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。 浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。