公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US08779410B2

公开(公告)日：2014-07-15

申请号：US13355692

申请日：2012-01-23

申请人： Motoyuki Sato ,  Yoshiaki Asao ,  Takashi Obara ,  Takashi Nakazawa

发明人： Motoyuki Sato ,  Yoshiaki Asao ,  Takashi Obara ,  Takashi Nakazawa

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L27/22

CPC分类号： H01L27/228

摘要： According to one embodiment, a resistance change memory includes resistance change elements, vias and sidewall insulating layers, the elements and the vias provided alternately in a first direction and a second direction orthogonal to the first direction, and the sidewall insulating layers provided on sidewalls of the elements. The elements are provided in a lattice pattern having a constant pitch. A thickness of each of the sidewall insulating layers in a direction orthogonal to the sidewalls is a value for contacting the sidewall insulating layers each other or more to form holes between the sidewall insulating layers. The vias are provided in the holes respectively.

摘要翻译： 根据一个实施例，电阻变化存储器包括电阻变化元件，通路和侧壁绝缘层，沿与第一方向正交的第一方向和第二方向上交替设置的元件和通孔，以及设置在第二方向上的侧壁绝缘层 元素。 元件以具有恒定间距的格子图案提供。 每个侧壁绝缘层在与侧壁正交的方向上的厚度是用于使侧壁绝缘层彼此接触或接触以在侧壁绝缘层之间形成孔的值。 通孔分别设置在孔中。

公开(公告)号：US08754465B2

公开(公告)日：2014-06-17

申请号：US13603704

申请日：2012-09-05

申请人： Motoyuki Sato

发明人： Motoyuki Sato

IPC分类号： H01L29/788

CPC分类号： H01L29/788 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883

摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate, a tunnel insulating film on the semiconductor substrate, a first floating gate electrode on the tunnel insulating film, an inter-floating gate insulating film on the first floating gate electrode, a second floating gate electrode on the inter-floating gate insulating film, an inter-electrode insulating film on the second floating gate electrode, and a control gate electrode on the inter-electrode insulating film. The inter-floating gate insulating film includes a main insulating film, and a first fixed charge layer between the main insulating film and the second floating gate electrode and having negative fixed charges.

摘要翻译： 根据一个实施例，半导体器件包括半导体衬底，半导体衬底上的隧道绝缘膜，隧道绝缘膜上的第一浮栅，第一浮栅上的浮置浮栅绝缘膜，第二浮置 互栅极绝缘膜上的栅电极，第二浮栅上的电极间绝缘膜，以及电极间绝缘膜上的控制栅电极。 互浮栅极绝缘膜包括主绝缘膜和主绝缘膜和第二浮栅之间的第一固定电荷层，并具有负固定电荷。

公开(公告)号：US08037384B2

公开(公告)日：2011-10-11

申请号：US12340549

申请日：2008-12-19

申请人： Takumi Hasegawa ,  Motoyuki Sato ,  Tomoji Nakamura ,  Nobuo Konami ,  Jun Matsushima

发明人： Takumi Hasegawa ,  Motoyuki Sato ,  Tomoji Nakamura ,  Nobuo Konami ,  Jun Matsushima

IPC分类号： G01R31/28

CPC分类号： G01R31/318533

摘要： A semiconductor device includes a test target circuit; scan chains that enable scanning of the test target circuit; a first random number generation circuit that forms test patterns supplied to the scan chains; a second random number generation circuit that is provided separately from the first random number generation circuit; and a random number control circuit that uses the random numbers generated by the second random number generation circuit to change the random numbers generated by the first random number generation circuit. In a test of the semiconductor device, since a period of a clock of a scan chain does not need to be longer than that of a clock of a pattern generator, the number of clocks of the pattern generator needed for a test can be prevented from increasing. Accordingly, a test time can be prevented from increasing.

摘要翻译： 半导体器件包括测试目标电路; 可扫描测试目标电路的扫描链; 形成提供给扫描链的测试图案的第一随机数生成电路; 与第一随机数生成电路分开设置的第二随机数生成电路; 以及使用由第二随机数生成电路产生的随机数来改变由第一随机数生成电路产生的随机数的随机数控制电路。 在半导体器件的测试中，由于扫描链的时钟周期不需要长于模式发生器的时钟周期，因此可以防止测试所需的模式发生器的时钟数 增加。 因此，可以防止测试时间增加。

公开(公告)号：US20100003813A1

公开(公告)日：2010-01-07

申请号：US12585334

申请日：2009-09-11

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/28

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

公开(公告)号：US07521309B2

公开(公告)日：2009-04-21

申请号：US11948344

申请日：2007-11-30

申请人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

发明人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28097 ,  H01L21/3215 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66507

摘要： A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method has: forming a gate insulating film; forming a first gate electrode layer, and forming a second gate electrode layer; forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer; forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer; forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.

摘要翻译： 一种制造具有第一导电类型的MOSFET的半导体器件的方法和形成在半导体衬底上的与第一导电类型不同的第二导电类型的MOSFET，该方法具有：形成栅极绝缘膜; 形成第一栅电极层，形成第二栅电极层; 在所述第一栅电极层和所述第二栅电极层上形成第一含金属层; 形成用于防止金属在所述第一金属含有层上的扩散的第二含金属层; 在所述第二栅电极层上形成第三金属含有层，从所述第二金属含有层和所述第二金属含有层被选择性地除去，所述第三金属含有层的厚度与所述第一金属含有层的厚度不同 其中所述第三含金属层包含与所述第一含金属层中所含的金属或合金相同的金属或合金; 并进行热处理，从而使包含在所述第一金属含有层中的金属与所述第一栅极电极层之间产生反应，将所述第一栅电极层转换成合金，并引起所述第三金属含有层中含有的金属与所述 第二栅极电极层，以将所述第二栅电极层转换成合金，从而形成不同组成的栅电极。

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US5508616A

公开(公告)日：1996-04-16

申请号：US150680

申请日：1993-11-20

申请人： Motoyuki Sato ,  Hiroaki Niitsuma ,  Jun Fuziwara ,  Makoto Miyairi

发明人： Motoyuki Sato ,  Hiroaki Niitsuma ,  Jun Fuziwara ,  Makoto Miyairi

IPC分类号： G01V3/18 ,  G01V3/28

CPC分类号： G01V3/28

摘要： At least one transmitting coil 1 and at least one receiving coil 2 are disposed along the bore axis 18 of a borehole 7 such that these coils are inclined and face each other, thus causing these coils to have directivity for examining electric characteristics of a formation around the borehole. More specifically, a method of and an apparatus for directional induction logging are provided, which permit measurement of the electric conductivity distribution of a formation in the circumferential direction in a range of several meters around the borehole and also imaging reflecting the electric conductivity.

摘要翻译： 至少一个发射线圈1和至少一个接收线圈2沿着钻孔7的孔轴线18设置，使得这些线圈彼此倾斜并相对，从而使这些线圈具有用于检查周围的地层的电特性的方向性 钻孔。 更具体地说，提供了一种用于定向感应测井的方法和装置，其允许在围绕钻孔的几米范围内测量地层在圆周方向上的电导率分布，并且还可以反映电导率。

公开(公告)号：US4922115A

公开(公告)日：1990-05-01

申请号：US213931

申请日：1988-06-30

申请人： Yasushi Mawatari ,  Toru Ikegami ,  Motoyuki Sato ,  Bertram Burgkhardt ,  Ernst Piesch ,  Hans-Gerd Rober

发明人： Yasushi Mawatari ,  Toru Ikegami ,  Motoyuki Sato ,  Bertram Burgkhardt ,  Ernst Piesch ,  Hans-Gerd Rober

IPC分类号： G01T1/06 ,  G01T1/10

CPC分类号： G01T1/06 ,  G01T1/10

摘要： A fluorescent glass dosimeter comprises a glass element holder including inner and outer envelopes. Each of the inner and outer envelopes has a mask frame used for covering the peripheral portions of the corresponding fluorescent detection surface of a fluorescent glass element. The fluorescent glass dosimeter further comprises upper and lower cases. The upper case serves as a pivotable lock member and includes a lock portion, the locking condition of which can be released by means of a magnet. The lower case is adapted to receive the glass element holder. The upper and lower cases are engageable with each other at their slide portions. The glass element holder includes an integral index plate havig an identification hole code at a predetermined location. A direction regulating member is provided for the lower case, and a portion engageable with the direction regulating member is provided for the glass element holder. The fluorescent glass holder is positioned as a result of the engagement between the direction regulating member and the engageable portion of the glass element holder. A filter, used for adjusting energy dependency upon a radiation exposure, is located on the inner side of the upper wall of each of the upper and lower cases. A filter, used for adjusting direction dependency upon an incident radiation, is located on the inner side of the side wall of the lower case.

摘要翻译： 荧光玻璃剂量计包括玻璃元件保持器，其包括内包封和外封套。 内包封和外包封中的每一个具有用于覆盖荧光玻璃元件的相应荧光检测表面的周边部分的掩模框架。 荧光玻璃剂量计还包括上壳体和下壳体。 上壳体用作可枢转的锁定构件，并且包括锁定部分，其锁定状态可以通过磁体释放。 下壳体适于容纳玻璃元件支架。 上壳体和下壳体在其滑动部分处可彼此接合。 玻璃元件保持器包括在预定位置处的识别孔代码的整体折射板。 一个方向调节件被设置用于下壳体，并且与该方向调节件接合的部分设置用于玻璃元件保持器。 荧光玻璃保持器由于方向调节构件和玻璃元件保持器的可接合部分之间的接合而定位。 用于调节对辐射照射的能量依赖性的过滤器位于每个上壳体和下壳体的上壁的内侧。 用于调整入射辐射的方向依赖性的滤光器位于下壳体的侧壁的内侧。

公开(公告)号：US4880986A

公开(公告)日：1989-11-14

申请号：US250245

申请日：1988-09-28

申请人： Junji Yamada ,  Yasushi Mawatari ,  Toru Ikegami ,  Koichi Nishio ,  Motoyuki Sato ,  Bertram Burgkhardt ,  Ernst Piesch ,  Siegfried Ugi

发明人： Junji Yamada ,  Yasushi Mawatari ,  Toru Ikegami ,  Koichi Nishio ,  Motoyuki Sato ,  Bertram Burgkhardt ,  Ernst Piesch ,  Siegfried Ugi

IPC分类号： G01T1/06 ,  G01T1/10 ,  G01T1/115 ,  G01T7/08

CPC分类号： G01T1/06 ,  G01T1/10 ,  G01T7/08

摘要： A radiation dose measuring system using fluorescent dosemeters comprises fluorescent dosemeters including fluorescent glass elements having a fluorescent detection surface, a magazine capable of holding a predetermined number of fluorescent dosemeters, a magazine conveying device for conveying a magazine of a plurality of magazines fed one by one such that is predetermined segment is located to a take-out position, a fluorescent dosemeter take-out device for taking the fluorescent dosemeter from the magazine located in a predetermined position, a fluorescent glass element setting device for moving the fluorescent glass element to a predetermined measuring position and a dose measuring device for subjecting the fluorescent glass element which is set to a measuring position to an ultraviolet ray and for measuring an intensity of fluorescent light which is emitted from an excited glass element.

摘要翻译： 使用荧光剂量计的放射剂量测量系统包括荧光剂量计，包括具有荧光检测表面的荧光玻璃元件，能够保持预定数量的荧光剂量计的储器;用于输送一个接一个地供给的多个杂志的杂志的杂志传送装置 使得预定片段位于取出位置，用于从位于预定位置的盒中取出荧光剂量计的荧光剂量计取出装置，用于将荧光玻璃元件移动到预定位置的荧光玻璃元件调节装置 测量位置和剂量测量装置，用于对设置在测量位置的荧光玻璃元件进行紫外线测量并测量从激发的玻璃元件发射的荧光强度。