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    MAGNETIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    磁性随机访问存储器件及其制造方法

    公开(公告)号：US20160155934A1

    公开(公告)日：2016-06-02

    申请号：US14887506

    申请日：2015-10-20

    申请人： Kyu-Man HWANG ,  Shi-Jung KIM ,  Mi-Lim PARK ,  Jun-Soo BAE ,  Seung-Woo LEE

    发明人： Kyu-Man HWANG ,  Shi-Jung KIM ,  Mi-Lim PARK ,  Jun-Soo BAE ,  Seung-Woo LEE

    IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/12

    摘要： Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.

    摘要翻译： 磁性随机存取存储器（MRAM）器件及其制造方法包括在衬底上的至少一个第一磁性材料图案，至少一个第一磁性材料图案上的至少一个第二磁性材料图案，以及至少一个隧道 所述至少一个第一磁性材料图案和所述至少一个第二磁性材料图案之间的阻挡层图案。 所述至少一个第一磁性材料图案的顶表面的宽度可以小于所述至少一个第二磁性材料图案的底表面的宽度。

    Probe card and test apparatus including the same
    2.
    发明授权
    Probe card and test apparatus including the same 有权
    探针卡和测试仪器包括它们

    公开(公告)号：US08581612B2

    公开(公告)日：2013-11-12

    申请号：US12817826

    申请日：2010-06-17

    申请人： Hideki Horii ,  Young-kuk Kim ,  Mi-lim Park

    发明人： Hideki Horii ,  Young-kuk Kim ,  Mi-lim Park

    IPC分类号： G01R31/20

    CPC分类号： G01R31/2889

    摘要： A probe card and a test apparatus including the probe card for improving test reliability. The probe card may include a first input terminal Microelectromechanical Systems (MEMS) switch that connects a first input terminal and a first input probe pin, wherein the first input terminal MEMS switch comprises a control portion that receives an operation signal and a connection portion that connects the first input terminal and the first input probe pin. The probe card may further include a first output terminal MEMS switch that connects a first output terminal and a first output probe pin, wherein the first output terminal MEMS switch comprises a control portion that receives the operation signal and a connection portion that connects the first output terminal and the first output probe pin.

    摘要翻译： 探针卡和测试装置，包括用于提高测试可靠性的探针卡。 探针卡可以包括连接第一输入端和第一输入探针的第一输入端微机电系统（MEMS）开关，其中第一输入端MEMS开关包括接收操作信号的控制部分和连接 第一输入端和第一输入探针。 探针卡还可以包括连接第一输出端和第一输出探针的第一输出端MEMS开关，其中第一输出端MEMS开关包括接收操作信号的控制部分和连接第一输出端 端子和第一个输出探针。

    METHOD OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE
    3.
    发明申请
    METHOD OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE 有权
    测量电阻记忆装置电阻的方法

    公开(公告)号：US20110051497A1

    公开(公告)日：2011-03-03

    申请号：US12872396

    申请日：2010-08-31

    申请人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    发明人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0007

    摘要： A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse.

    摘要翻译： 可以通过向电阻式存储器件的选定单元施加数据写脉冲来提供测量电阻式存储器件中的存储单元的电阻的方法，该电阻读取脉冲在从 施加数据写入脉冲的时间，当对所选择的单元施加电阻读取脉冲时，响应于脉冲波形输出来测量单元上的下降电压，使用下降电压和测试的内部电阻测量通过电池的总电流 耦合到所述单元的装置，以及使用所述总电流和所述电阻读取脉冲的电压来确定所述电阻性存储器件的电阻。

    PROBE CARD AND TEST APPARATUS INCLUDING THE SAME
    6.
    发明申请
    PROBE CARD AND TEST APPARATUS INCLUDING THE SAME 有权
    探针卡和测试装置，包括它们

    公开(公告)号：US20110121852A1

    公开(公告)日：2011-05-26

    申请号：US12817826

    申请日：2010-06-17

    申请人： Hideki Horii ,  Young-kuk Kim ,  Mi-lim Park

    发明人： Hideki Horii ,  Young-kuk Kim ,  Mi-lim Park

    IPC分类号： G01R31/02 ,  G01R13/34 ,  G01R31/00

    CPC分类号： G01R31/2889

    摘要： A probe card and a test apparatus including the probe card for improving test reliability. The probe card may include a first input terminal Microelectromechanical Systems (MEMS) switch that connects a first input terminal and a first input probe pin, wherein the first input terminal MEMS switch comprises a control portion that receives an operation signal and a connection portion that connects the first input terminal and the first input probe pin. The probe card may further include a first output terminal MEMS switch that connects a first output terminal and a first output probe pin, wherein the first output terminal MEMS switch comprises a control portion that receives the operation signal and a connection portion that connects the first output terminal and the first output probe pin.

    摘要翻译： 探针卡和测试装置，包括用于提高测试可靠性的探针卡。 探针卡可以包括连接第一输入端和第一输入探针的第一输入端微机电系统（MEMS）开关，其中第一输入端MEMS开关包括接收操作信号的控制部分和连接 第一输入端和第一输入探针。 探针卡还可以包括连接第一输出端和第一输出探针的第一输出端MEMS开关，其中第一输出端MEMS开关包括接收操作信号的控制部分和连接第一输出端 端子和第一个输出探针。

    Method of measuring a resistance of a resistive memory device
    7.
    发明授权
    Method of measuring a resistance of a resistive memory device 有权
    测量电阻式存储器件电阻的方法

    公开(公告)号：US08144507B2

    公开(公告)日：2012-03-27

    申请号：US12872396

    申请日：2010-08-31

    申请人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    发明人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0007

    摘要： A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse.

    摘要翻译： 可以通过向电阻式存储器件的选定单元施加数据写脉冲来提供测量电阻式存储器件中的存储单元的电阻的方法，该电阻读取脉冲在从 施加数据写入脉冲的时间，当对所选择的单元施加电阻读取脉冲时，响应于脉冲波形输出来测量单元上的下降电压，使用下降电压和测试的内部电阻测量通过电池的总电流 耦合到所述单元的装置，以及使用所述总电流和所述电阻读取脉冲的电压来确定所述电阻性存储器件的电阻。

    Resistance variable memory device and operating method thereof
    8.
    发明授权
    Resistance variable memory device and operating method thereof 有权
    电阻变量存储器件及其操作方法

    公开(公告)号：US07787278B2

    公开(公告)日：2010-08-31

    申请号：US12229341

    申请日：2008-08-22

    申请人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    发明人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    IPC分类号： G11C17/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004

    摘要： Provided is a resistance variable memory device and a method for operating same. The resistance variable memory device has a phase change material between a top electrode and a bottom electrode. In the method for operating a resistance variable memory, the write current is applied in a direction from the top electrode to the bottom electrode, and the read current is applied in a direction from the bottom electrode to the top electrode. The phase change material is programmed by applying the write current, and a resistance drift of the phase change material is restrained by applying the read current.

    摘要翻译： 提供一种电阻变量存储装置及其操作方法。 电阻可变存储器件在顶部电极和底部电极之间具有相变材料。 在用于操作电阻可变存储器的方法中，写入电流沿从顶部电极到底部电极的方向施加，并且读取电流沿着从底部电极到顶部电极的方向施加。 通过施加写入电流来编程相变材料，并且通过施加读取电流来抑制相变材料的电阻漂移。

    Resistance variable memory device and operating method thereof
    9.
    发明申请
    Resistance variable memory device and operating method thereof 有权
    电阻变量存储器件及其操作方法

    公开(公告)号：US20090052236A1

    公开(公告)日：2009-02-26

    申请号：US12229341

    申请日：2008-08-22

    申请人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    发明人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004

    摘要： Provided is a resistance variable memory device and a method for operating same. The resistance variable memory device has a phase change material between a top electrode and a bottom electrode. In the method for operating a resistance variable memory, the write current is applied in a direction from the top electrode to the bottom electrode, and the read current is applied in a direction from the bottom electrode to the top electrode. The phase change material is programmed by applying the write current, and a resistance drift of the phase change material is restrained by applying the read current.

    摘要翻译： 提供一种电阻变量存储装置及其操作方法。 电阻可变存储器件在顶部电极和底部电极之间具有相变材料。 在用于操作电阻可变存储器的方法中，写入电流沿着从顶部电极到底部电极的方向施加，并且读取电流沿着从底部电极到顶部电极的方向施加。 通过施加写入电流来编程相变材料，并且通过施加读取电流来抑制相变材料的电阻漂移。

    SYSTEM OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE
    10.
    发明申请
    SYSTEM OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE 审中-公开
    测量电阻记忆装置电阻的系统

    公开(公告)号：US20120147658A1

    公开(公告)日：2012-06-14

    申请号：US13399469

    申请日：2012-02-17

    申请人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    发明人： Young-Kuk Kim ,  Mi-Lim Park ,  Hori Ihideki ,  Dong-Seok Suh

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0007

    摘要： A system for measuring a resistance of a memory cell in a resistive memory device can include a pulse generator configured to apply a data write pulse and a resistance read pulse to the resistive memory device with a delay time. A connecting member can be connected between the pulse generator and the resistive memory device. A test measurement device can be connected to the resistive memory device outputting a pulse waveform and a data-processing member can be configured to determine the resistance of the resistive memory device using the pulse waveform and an internal resistance of the test measurement device.

    摘要翻译： 用于测量电阻式存储器件中的存储单元的电阻的系统可以包括被配置为以延迟时间向阻性存储器件施加数据写入脉冲和电阻读取脉冲的脉冲发生器。 连接构件可以连接在脉冲发生器和电阻性存储器件之间。 可以将测试测量装置连接到输出脉搏波形的电阻式存储器件，并且数据处理部件可以被配置为使用脉搏波形和测试测量装置的内部电阻来确定电阻性存储器件的电阻。