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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US08530965B2

    公开(公告)日：2013-09-10

    申请号：US13448850

    申请日：2012-04-17

    申请人： Min-Hwan Kim

    发明人： Min-Hwan Kim

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66681 ,  H01L29/00 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/66689 ,  H01L29/7816

    摘要： A semiconductor device comprising a substrate in which a first region and a second region are defined, a gate line which extends in a first direction and traverses the first region and the second region, a source region including a portion formed in the first region, a first part of a body region which is formed under the portion of the source region in the first region and has a first width, a first well which is formed under the first part of the body region in the first region and has a second width greater than the first width, a second part of the body region which is formed in the second region and has a third width, and a second well which is formed under the second part of the body region in the second region and has a fourth width smaller than the third width.

    SECONDARY BATTERY
    3.
    发明申请
    SECONDARY BATTERY 有权
    二次电池

    公开(公告)号：US20120286719A1

    公开(公告)日：2012-11-15

    申请号：US13469788

    申请日：2012-05-11

    申请人： Seol-Ah LEE ,  So-Ra LEE ,  Do-Hyung PARK ,  Jun-Sik KIM ,  Chong-Hoon LEE ,  Seok-Gyun WOO ,  Jong-Ki LEE ,  Min-Hwan KIM ,  Yoon-Chang KIM ,  Jake KIM

    发明人： Seol-Ah LEE ,  So-Ra LEE ,  Do-Hyung PARK ,  Jun-Sik KIM ,  Chong-Hoon LEE ,  Seok-Gyun WOO ,  Jong-Ki LEE ,  Min-Hwan KIM ,  Yoon-Chang KIM ,  Jake KIM

    IPC分类号： H02J7/00

    CPC分类号： H01M10/425 ,  H01M10/44

    摘要： A piezoelectric element layer is further formed as a package material of a secondary battery, so that the secondary battery can be self-charged using a voltage generated in the piezoelectric element layer according to vibration generated in an electronic device and vibration generated by movement of the electronic device itself. The secondary battery includes a battery case that accommodates an electrode assembly, the battery case having an outer coating layer and a piezoelectric element layer formed on an inner surface of the outer coating layer, and a protection circuit module mounted to an outside of the battery case and electrically connected to the electrode assembly. In the secondary battery, a voltage storage is provided to the protection circuit module, and the piezoelectric element layer converts absorbed vibration into voltage and then stores the voltage in the voltage storage so that the secondary battery is self-charged as occasion demands.

    摘要翻译： 进一步形成压电元件层作为二次电池的封装材料，从而根据电子设备中产生的振动，使用压电元件层中产生的电压，二次电池可以自动充电， 电子设备本身。 二次电池包括容纳电极组件的电池壳体，具有形成在外部涂层的内表面上的外部涂层和压电元件层的电池壳体和安装到电池壳体的外部的保护电路模块 并电连接到电极组件。 在二次电池中，向保护电路模块提供电压存储，并且压电元件层将吸收的振动转换为电压，然后将电压存储在电压存储器中，使得二次电池根据需要自充电。

    APPARATUS AND METHOD FOR MANUFACTURING LED PACKAGE
    5.
    发明申请
    APPARATUS AND METHOD FOR MANUFACTURING LED PACKAGE 审中-公开
    用于制造LED封装的装置和方法

    公开(公告)号：US20120122250A1

    公开(公告)日：2012-05-17

    申请号：US13278887

    申请日：2011-10-21

    申请人： Won Soo JI ,  Choo Ho KIM ,  Sung Hoon OH ,  Min Hwan KIM ,  Beom Seok SHIN

    发明人： Won Soo JI ,  Choo Ho KIM ,  Sung Hoon OH ,  Min Hwan KIM ,  Beom Seok SHIN

    IPC分类号： H01L21/66 ,  B21B15/00

    CPC分类号： H01L22/14 ,  G01R31/2601 ,  G01R31/2635 ,  H01L33/48 ,  H01L2933/0033 ,  H01L2933/005 ,  Y10T29/51

    摘要： An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit.

    摘要翻译： 一种用于制造发光二极管（LED）封装的装置，包括：加热单元，其将引线框架状态中的LED封装阵列加热，其中安装多个LED封装件以阵列设置在引线框架上; 测试单元，通过向由加热单元加热的LED封装阵列施加电压或电流来测试LED封装阵列中的每个LED封装的工作状态; 以及切割单元，根据测试单元的测试结果，仅切断被确定为功能产品的LED封装或从引线框确定为缺陷产品的LED封装以将其去除。

    Upper Plenum Structure of Cooled Pressure Vessel for Prismatic Very High Temperature Reactor
    6.
    发明申请
    Upper Plenum Structure of Cooled Pressure Vessel for Prismatic Very High Temperature Reactor 审中-公开
    高温反应堆冷却压力容器的上部结构

    公开(公告)号：US20090252277A1

    公开(公告)日：2009-10-08

    申请号：US12202942

    申请日：2008-09-02

    申请人： Min-Hwan KIM ,  Hong-Sik LIM ,  Dong-Ok KIM ,  Jong-Hwa CHANG ,  Won-Jae LEE

    发明人： Min-Hwan KIM ,  Hong-Sik LIM ,  Dong-Ok KIM ,  Jong-Hwa CHANG ,  Won-Jae LEE

    IPC分类号： G21C15/02 ,  G21C15/28

    CPC分类号： G21C1/00 ,  G21C11/06 ,  G21C15/02 ,  G21C15/22 ,  Y02E30/30 ,  Y02E30/40

    摘要： An upper plenum structure of a cooled pressure vessel for a prismatic very high temperature reactor which secures a space for coolant to supply to a core and also supports an upper reflector located inside a graphite structure on top of the core. The upper plenum structure includes a cavity structure where the coolant goes down in the upper plenum structure, a plurality of upper reflector supports formed with the cavity and supporting the upper reflector located on top thereof, and a plurality of coolant distributing blocks. Each of the coolant distributing blocks is coupled with a bottom portion of a respective one of the upper reflector supports and is located on top of the core in order to distribute the coolant collected in a cavity, formed by the upper reflector support, to the core. The coolant distributing blocks cooperate with the upper reflector supports to define the cavity structure.

    摘要翻译： 用于棱柱形高温反应器的冷却压力容器的上部增压室结构，其固定用于冷却剂供应到芯部的空间，并且还支撑位于芯部顶部的石墨结构内部的上部反射器。 上部气室结构包括空腔结构，其中冷却剂在上部气室结构中向下流动，多个上部反射器支撑件形成有空腔并支撑位于其顶部的上部反射器，以及多个冷却剂分配块。 每个冷却剂分配块与上部反射器支撑件中的相应一个的底部部分联接，并且位于芯部的顶部，以便将收集在由上部反射器支撑件形成的空腔中的冷却剂分配到芯部 。 冷却剂分配块与上反射器支撑件配合以限定空腔结构。

    Long-reach wavelength division multiplexing passive optical networks by using the position adjustment of broadband light source
    7.
    发明授权
    Long-reach wavelength division multiplexing passive optical networks by using the position adjustment of broadband light source 有权
    长距离波分复用无源光网络采用宽带光源位置调整

    公开(公告)号：US07596317B2

    公开(公告)日：2009-09-29

    申请号：US11747164

    申请日：2007-05-10

    申请人： Chang-Hee Lee ,  Sang-Mook Lee ,  Min-Hwan Kim

    发明人： Chang-Hee Lee ,  Sang-Mook Lee ,  Min-Hwan Kim

    IPC分类号： H04J14/00

    CPC分类号： H04J14/02 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0282

    摘要： An optical network system includes a central office (CO) comprising an A-band BLS to be injected into a light source for downstream signals, an A-band BLS coupling device for coupling the A-band BLS, a first wavelength-division multiplexer/demultiplexer connected to the A-band BLS coupling device for multiplexing/demultiplexing, and a plurality of first optical transceivers connected to the first wavelength-division multiplexer/demultiplexer; a remote node (RN) comprising a B-band BLS coupling device and a second wavelength-division multiplexer/demultiplexer connected to the B-band BLS coupling device for multiplexing/demultiplexing, and being connected to the CO through an optical fiber; and a plurality of optical network terminations (ONTs) including a plurality of second optical transceivers connected to the second wavelength-division multiplexer/demultiplexer, wherein either the RN or one of the plurality of ONTs further includes a B-band BLS to be injected to a light source for upstream signals.

    摘要翻译： 光网络系统包括：中心局（CO），包括要注入下行信号的光源的A波段BLS，用于耦合A波段BLS的A波段BLS耦合设备，第一波分多路复用器/ 连接到用于复用/解复用的A波段BLS耦合装置的解复用器以及连接到第一波分多路复用器/解复用器的多个第一光收发器; 一个远程节点（RN），包括一个B频带BLS耦合装置和一个连接到B频带BLS耦合装置的第二波分多路复用器/解复用器，用于复用/解复用，并通过光纤连接到CO; 以及包括连接到第二波分复用器/解复用器的多个第二光收发器的多个光网络终端（ONT），其中RN或多个ONT中的一个进一步包括要注入到B 上游信号的光源。

    METHOD FOR ISOTHERMAL AMPLIFICATION OF NUCLEIC ACIDS AND METHOD FOR DETECTING NUCLEIC ACIDS USING SIMULTANEOUS ISOTHERMAL AMPLIFICATION OF NUCLEIC ACIDS AND SIGNAL PROBE
    8.
    发明申请
    METHOD FOR ISOTHERMAL AMPLIFICATION OF NUCLEIC ACIDS AND METHOD FOR DETECTING NUCLEIC ACIDS USING SIMULTANEOUS ISOTHERMAL AMPLIFICATION OF NUCLEIC ACIDS AND SIGNAL PROBE 审中-公开
    用于核酸的同位素放大的方法和使用核酸和信号探针的同时同位素放大来检测核酸的方法

    公开(公告)号：US20090130677A1

    公开(公告)日：2009-05-21

    申请号：US12090196

    申请日：2006-09-08

    申请人： Min Hwan Kim ,  Ji Won Jeong ,  Un Ok Kim

    发明人： Min Hwan Kim ,  Ji Won Jeong ,  Un Ok Kim

    IPC分类号： C12Q1/68 ,  C12P19/34

    CPC分类号： C12Q1/6853 ,  C12Q1/6846 ,  C12Q1/6865 ,  C12Q2537/143 ,  C12Q2537/1376 ,  C12Q2521/101

    摘要： The present invention relates to a method for isothermal amplification of nucleic acids and a method for detecting nucleic acids, which comprises characterized in simultaneous isothermal amplification of nucleic acids and a signal probe to a method for isothermal amplification of target nucleic acids using an external primer set and RNA/DNA hybrid primer set, and a method for detecting amplification products by amplifying nucleic acids and a signal probe simultaneously using an external primer set, RNA-DNA hybrid primer set and DNA-RNA-DNA hybrid probe. The method according to the present invention is convenient compared with the conventional method, it is possible to amplify the target nucleic acids rapidly and exactly without a risk of contamination, and it can simultaneously amplify a signal probe, so that it can be applied to various genome project, such as detection and identification of a pathogen, detection of gene modification causing predetermined phenotype, detection of hereditary diseases or determination of sensibility to diseases, estimation of gene expression and apply to genome project, thus being useful for molecular biological studies and disease diagnosis.

    摘要翻译： 本发明涉及核酸的等温扩增方法和核酸检测方法，其特征在于将核酸同时等温扩增和信号探针用于使用外部引物组等位扩增靶核酸的方法 和RNA / DNA杂交引物组，以及通过使用外部引物组，RNA-DNA杂交引物组和DNA-RNA-DNA杂交探针同时扩增核酸和信号探针来检测扩增产物的方法。 根据本发明的方法与常规方法相比是方便的，可以快速准确地扩增靶核酸而没有污染的风险，并且可以同时放大信号探针，从而可以应用于各种 基因组计划，如病原体的检测和鉴定，检测导致预期表型的基因修饰，遗传性疾病的检测或疾病敏感性的测定，基因表达的估计和应用于基因组计划，因此可用于分子生物学研究和疾病 诊断。

    LONG-REACH WAVELENGTH DIVISION MULTIPLEXING PASSIVE OPTICAL NETWORKS BY USING THE POSITION ADJUSTMENT OF BROADBAND LIGHT SOURCE
    9.
    发明申请
    LONG-REACH WAVELENGTH DIVISION MULTIPLEXING PASSIVE OPTICAL NETWORKS BY USING THE POSITION ADJUSTMENT OF BROADBAND LIGHT SOURCE 有权
    通过使用宽带光源的位置调整来实现长距离波长多路复用无源光网络

    公开(公告)号：US20070206948A1

    公开(公告)日：2007-09-06

    申请号：US11747164

    申请日：2007-05-10

    申请人： Chang-Hee Lee ,  Sang-Mook Lee ,  Min-Hwan Kim

    发明人： Chang-Hee Lee ,  Sang-Mook Lee ,  Min-Hwan Kim

    IPC分类号： H04J14/00

    CPC分类号： H04J14/02 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0282

    摘要： An optical network system includes a central office (CO) comprising an A-band BLS to be injected into a light source for downstream signals, an A-band BLS coupling device for coupling the A-band BLS, a first wavelength-division multiplexer/demultiplexer connected to the A-band BLS coupling device for multiplexing/demultiplexing, and a plurality of first optical transceivers connected to the first wavelength-division multiplexer/demultiplexer; a remote node (RN) comprising a B-band BLS coupling device and a second wavelength-division multiplexer/demultiplexer connected to the B-band BLS coupling device for multiplexing/demultiplexing, and being connected to the CO through an optical fiber; and a plurality of optical network terminations (ONTs) including a plurality of second optical transceivers connected to the second wavelength-division multiplexer/demultiplexer, wherein either the RN or one of the plurality of ONTs further includes a B-band BLS to be injected to a light source for upstream signals.

    摘要翻译： 光网络系统包括：中心局（CO），包括要注入下行信号的光源的A波段BLS，用于耦合A波段BLS的A波段BLS耦合设备，第一波分多路复用器/ 连接到用于复用/解复用的A波段BLS耦合装置的解复用器以及连接到第一波分多路复用器/解复用器的多个第一光收发器; 一个远程节点（RN），包括一个B频带BLS耦合装置和一个连接到B频带BLS耦合装置的第二波分多路复用器/解复用器，用于复用/解复用，并通过光纤连接到CO; 以及包括连接到第二波分复用器/解复用器的多个第二光收发器的多个光网络终端（ONT），其中RN或多个ONT中的一个进一步包括要注入到B 上游信号的光源。

    DMOS transistor having a high reliability and a method for fabricating the same
    10.
    发明授权
    DMOS transistor having a high reliability and a method for fabricating the same 有权
    具有高可靠性的DMOS晶体管及其制造方法

    公开(公告)号：US06252279B1

    公开(公告)日：2001-06-26

    申请号：US09376710

    申请日：1999-08-17

    申请人： Min Hwan Kim

    发明人： Min Hwan Kim

    IPC分类号： H01L2976

    CPC分类号： H01L29/7816 ,  H01L29/0619 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41758

    摘要： A power DMOS transistor having an improved current driving capability and improved reliability is provided. A fabrication method thereof is also provided. The DMOS transistor includes a semiconductor substrate having a first conductivity type and a semiconductor region having a second conductivity type formed on the semiconductor substrate. A drain having a second conductivity type is formed on the semiconductor region. A high-concentration buried impurity layer having a second conductivity type is formed on the semiconductor region under the drain. A body region having a first conductivity type is formed in the semiconductor substrate spaced a predetermined distance from the semiconductor region. A source having a second conductivity type is formed on the body region. A gate electrode is formed on the semiconductor substrate having a gate insulative film formed thereon. A source electrode and a drain electrode coupled respectively to the source and the drain are formed on the resultant structure.

    摘要翻译： 提供了具有改进的电流驱动能力和改进的可靠性的功率DMOS晶体管。 还提供了其制造方法。 DMOS晶体管包括具有第一导电类型的半导体衬底和形成在半导体衬底上的具有第二导电类型的半导体区域。 在半导体区域上形成具有第二导电类型的漏极。 在漏极下面的半导体区域上形成具有第二导电类型的高浓度掩埋杂质层。 在与半导体区域隔开预定距离的半导体衬底中形成具有第一导电类型的体区。 在身体区域上形成具有第二导电类型的源。 在其上形成有栅极绝缘膜的半导体衬底上形成栅电极。 在所得结构上形成分别与源极和漏极耦合的源电极和漏电极。