公开(公告)号：US20120101508A1

公开(公告)日：2012-04-26

申请号：US13276354

申请日：2011-10-19

申请人： Seung Wook CHOI ,  Min Kyu Lee ,  Dong Myung Min

发明人： Seung Wook CHOI ,  Min Kyu Lee ,  Dong Myung Min

IPC分类号： A61B19/00 ,  G05B19/02

CPC分类号： B25J9/1697 ,  A61B34/30 ,  A61B34/37 ,  A61B2034/2051 ,  A61B2034/2055 ,  A61B2090/3612 ,  A61B2090/3941

摘要： A movement compensating device of a surgical robot in which a surgical operation processing unit mounted with a surgical instrument is coupled to one end of a body section includes: an image information creating unit that creates image information corresponding to an image signal supplied from a camera unit; a recognition point information analyzing unit that creates analysis information on a distance and an angle between a recognition point recognized from image information pieces corresponding to a predetermined number of image frames and a predetermined reference point; a variation analyzing unit that creates variation information in distance and angle between two analysis information pieces continuously created; and a control command creating and outputting unit that creates and outputs a control command for adjusting the position of the surgical operation processing unit so that the variation in distance and angle included in the variation information be 0 (zero).

摘要翻译： 外科手术机器人的运动补偿装置，其中安装有外科器械的手术操作处理单元联接到身体部分的一端包括：图像信息创建单元，其创建与从相机单元提供的图像信号相对应的图像信息 ; 识别点信息分析单元，其创建关于从与预定数量的图像帧相对应的图像信息中识别的识别点与预定参考点之间的距离和角度的分析信息; 变化分析单元，其创建连续创建的两个分析信息之间的距离和角度的变化信息; 以及控制命令创建和输出单元，其创建并输出用于调整外科手术操作处理单元的位置的控制命令，使得包含在变化信息中的距离和角度的变化为0（零）。

公开(公告)号：US08059461B2

公开(公告)日：2011-11-15

申请号：US12207279

申请日：2008-09-09

申请人： Min Kyu Lee

发明人： Min Kyu Lee

IPC分类号： G11C16/08 ,  G11C8/12

CPC分类号： G11C16/0483 ,  G11C16/08 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524

摘要： The flash memory device includes a block switch, first and second cell strings, first and second source lines, drain contacts, and first and second source contacts. The first cell string is connected to a first bit line and a second cell string is connected to a second bit line. The first and second cell strings each include a drain select transistor, a plurality of cell transistors, and a source select transistor connected in series. The drain contacts connect the first and second bit line to a semiconductor substrate. The first and second source contacts connect the first and second source lines to the semiconductor substrate. The first and second source lines in the same block are not adjacent and separated from each other by a predetermined interval.

摘要翻译： 闪速存储器件包括块开关，第一和第二单元串，第一和第二源极线，漏极触点以及第一和第二源极触点。 第一单元串连接到第一位线，而第二单元串连接到第二位线。 第一和第二单元串均包括漏极选择晶体管，多个单元晶体管和串联连接的源极选择晶体管。 漏极触点将第一和第二位线连接到半导体衬底。 第一和第二源极触点将第一和第二源极线连接到半导体衬底。 同一块中的第一和第二源极线不相邻并且彼此分开预定的间隔。

公开(公告)号：US20110267895A1

公开(公告)日：2011-11-03

申请号：US12982302

申请日：2010-12-30

申请人： Min Kyu LEE

发明人： Min Kyu LEE

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24

摘要： A method of operating a semiconductor memory device includes selecting one of a plurality of word lines, applying a program voltage, gradually dropping from a third level to a first level, to the selected word line, and discharging bit lines whenever a level of the program voltage is changed.

摘要翻译： 操作半导体存储器件的方法包括：选择多个字线中的一个，将从第三电平逐渐下降到第一电平的编程电压施加到所选择的字线，以及每当程序电平 电压变化。

公开(公告)号：US20110257661A1

公开(公告)日：2011-10-20

申请号：US13140988

申请日：2010-01-19

申请人： Seung Wook Choi ,  Min Kyu Lee ,  Min Hwa Lee

发明人： Seung Wook Choi ,  Min Kyu Lee ,  Min Hwa Lee

IPC分类号： A61B19/00

CPC分类号： A61B1/05 ,  A61B1/00094 ,  A61B1/00149 ,  A61B34/30 ,  A61B34/76 ,  A61B90/361 ,  A61B2034/2059 ,  A61B2217/005 ,  A61M2202/08

摘要： A liposuction surgical robot is disclosed. The liposuction surgical robot, which includes: a control unit, a robot arm driven by a particular control signal received from the control unit, a cannula mounted on the robot arm and extending in one direction, and a suction unit, which is formed on an end portion of the cannula and which is inserted into a surgical site to suction fat, allows the surgeon to perform liposuction surgery conveniently without exerting too much strength. Also, the liposuction operation can be performed with greater convenience, accuracy, and safety, by automatically controlling the surgical robot using a haptic sensor, angle sensor, etc., analyzing visual information obtained from a vision unit to automatically set surgery range, and by mounting an image-taking camera on a front end of the cannula and automatically controlling the operation of the suction unit by analyzing the obtained visual information.

摘要翻译： 公开了一种吸脂手术机器人。 所述吸脂手术机器人包括：控制单元，由从所述控制单元接收的特定控制信号驱动的机器人手臂，安装在所述机器人手臂上并在一个方向上延伸的套管;以及抽吸单元， 套管的端部并插入外科手术部位以抽吸脂肪，允许外科医生方便地进行抽脂手术，而不会施加太多的强度。 此外，可以通过使用触觉传感器，角度传感器等自动控制外科手术机器人，分析从视觉单元获得的视觉信息来自动设置手术范围，并且通过以下方式自动设置手术范围，从而可以更方便，精确和安全地进行抽脂操作; 将照相机安装在套管的前端，并通过分析获得的视觉信息来自动控制抽吸单元的操作。

公开(公告)号：US07990771B2

公开(公告)日：2011-08-02

申请号：US12425025

申请日：2009-04-16

申请人： Kyung Pil Hwang ,  Hyung Seok Kim ,  Keum Hwan Noh ,  Ju In Kim ,  Min Kyu Lee ,  Seok Jin Joo ,  Sook Kyung Kim

发明人： Kyung Pil Hwang ,  Hyung Seok Kim ,  Keum Hwan Noh ,  Ju In Kim ,  Min Kyu Lee ,  Seok Jin Joo ,  Sook Kyung Kim

IPC分类号： G11C16/06 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34

CPC分类号： G11C16/12 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/3445 ,  G11C16/3459 ,  G11C2211/5621 ,  G11C2211/5642

摘要： A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.

摘要翻译： 一种擦除和编程包括多电平单元（MLC）的闪速存储器件的方法。 选择字线的MLC，并且基于它们的各自的阈值电压是否被包括在第一电压范围中，一些MLC被预先编程。 所选择的MLC以预编程（第一）电压进行预编程; 其余的MLC被禁止进行预编程; 那么连接到所选择的字线的剩余MLC通过应用从预编程电压以所选行的阶梯电压n的比率逐渐上升的程序（第二）电压被编程。

公开(公告)号：US07978532B2

公开(公告)日：2011-07-12

申请号：US12424984

申请日：2009-04-16

申请人： Kyung Pil Hwang ,  Hyung Seok Kim ,  Keum Hwan Noh ,  Ju In Kim ,  Min Kyu Lee ,  Seok Jin Joo ,  Sook Kyung Kim

发明人： Kyung Pil Hwang ,  Hyung Seok Kim ,  Keum Hwan Noh ,  Ju In Kim ,  Min Kyu Lee ,  Seok Jin Joo ,  Sook Kyung Kim

IPC分类号： G11C16/06 ,  G11C16/14 ,  G11C16/10

CPC分类号： G11C16/12 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/3445 ,  G11C16/3459 ,  G11C2211/5621 ,  G11C2211/5642

摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.

摘要翻译： 包括用于增加程序速度的MLC的闪存设备的擦除和编程方法。 在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。 因此，当擦除MLC时，可以减少故障发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。

公开(公告)号：US20110043609A1

公开(公告)日：2011-02-24

申请号：US12720421

申请日：2010-03-09

申请人： Seung Wook CHOI ,  Min Kyu Lee

发明人： Seung Wook CHOI ,  Min Kyu Lee

IPC分类号： H04N13/02 ,  G06K9/00

CPC分类号： G01B11/2513 ,  G06K2209/401 ,  G06T7/521 ,  G06T2207/10068 ,  G06T2207/30004 ,  H04N13/275

摘要： Provided are an apparatus and a method for processing a three dimensional image. The apparatus for processing the three dimensional image includes a lattice pattern projection unit configured to project a reference lattice pattern onto a photographic object; a photographing unit configured to generate an image information by photographing the photographic object onto which the reference lattice pattern is projected; a depth information extraction unit configured to extract a depth information of the photographic object based on comparison between the reference lattice pattern projected onto the photographic object and a modified lattice pattern included in the image information; and a left and right eye information generation unit configured to generate a left and right eye information in correspondence with the depth information, the left and right eye information containing a three dimensional information of the photographic object.

摘要翻译： 提供了一种用于处理三维图像的装置和方法。 用于处理三维图像的装置包括：格子图案投影单元，被配置为将参考网格图案投影到拍摄对象上; 拍摄单元，被配置为通过拍摄投影了参考格子图案的拍摄对象来生成图像信息; 深度信息提取单元，被配置为基于投影到所述摄影对象上的参考网格图案与包括在所述图像信息中的修改的格子图案之间的比较来提取所述摄影对象的深度信息; 以及左，右眼信息生成单元，被配置为根据深度信息生成左眼信息和右眼信息，左眼信息和右眼信息包含摄影对象的三维信息。

公开(公告)号：US07417899B2

公开(公告)日：2008-08-26

申请号：US11557337

申请日：2006-11-07

申请人： Min Kyu Lee

发明人： Min Kyu Lee

IPC分类号： G11C11/34

CPC分类号： G11C16/3454 ,  G11C16/344 ,  G11C16/3445 ,  G11C16/3459

摘要： A method of verifying a flash memory device includes discharging memory cell strings respectively connected to an even bit line and an odd bit line. Next, a voltage is applied to the memory cell strings respectively connected to the even bit line and the odd bit line, thus precharging the memory cell strings. The memory cell string connected to the even bit line are verified as erased by sensing the status of each memory cell string connected to the even bit line, and the memory cell string connected to the odd bit line are verified as erased by sensing the status of the memory cell string connected to the odd bit line.

摘要翻译： 一种验证闪速存储器件的方法包括放电分别连接到偶数位线和奇数位线的存储单元串。 接下来，将电压施加到分别连接到偶数位线和奇数位线的存储单元串，从而对存储单元串进行预充电。 通过感测与偶数位线连接的每个存储单元串的状态来检测连接到偶数位线的存储单元串被擦除，连接到奇数位线的存储单元串被检测为通过感测到 连接到奇数位线的存储单元串。

公开(公告)号：US07169670B2

公开(公告)日：2007-01-30

申请号：US10880691

申请日：2004-06-30

申请人： Min Kyu Lee ,  Hee Hyun Chang ,  Jum Soo Kim ,  Jung Ryul Ahn

发明人： Min Kyu Lee ,  Hee Hyun Chang ,  Jum Soo Kim ,  Jung Ryul Ahn

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/11534 ,  Y10S438/981

摘要： Provided is related to a method of forming a semiconductor device comprises steps of: providing a semiconductor substrate having a low voltage region and a high voltage region; forming a pad oxide layer and a pad nitride layer in sequence on the semiconductor substrate; removing the pad nitride layer and the pad oxide layer on the semiconductor substrate of the high voltage region, wherein a surface of the semiconductor substrate of the high voltage region is exposed and recessed; forming a sacrificial oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the sacrificial layer; forming a first gate oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the pad oxide layer and the pad nitride layer left on the semiconductor substrate of the low voltage region, wherein a surface of the semiconductor substrate of the low voltage region is exposed and recessed; and forming a second gate oxide layer on the first gate oxide layer and the surface of the semiconductor substrate of the low voltage region.

摘要翻译： 提供一种形成半导体器件的方法，包括以下步骤：提供具有低电压区域和高电压区域的半导体衬底; 在半导体衬底上依次形成焊盘氧化物层和焊盘氮化物层; 去除高电压区域的半导体衬底上的衬垫氮化物层和衬垫氧化物层，其中高压区域的半导体衬底的表面被暴露和凹陷; 在高电压区域的半导体衬底的表面上形成牺牲氧化物层; 去除牺牲层; 在所述高电压区域的半导体衬底的表面上形成第一栅氧化层; 去除低电压区域的半导体衬底上留下的衬垫氧化物层和衬垫氮化物层，其中低电压区域的半导体衬底的表面露出并凹陷; 以及在所述第一栅极氧化物层和所述低电压区域的所述半导体衬底的表面上形成第二栅极氧化物层。

公开(公告)号：US06339006B1

公开(公告)日：2002-01-15

申请号：US09609337

申请日：2000-06-30

申请人： Min Kyu Lee ,  Hee Hyun Chang ,  Hee Youl Lee ,  Dong Kee Lee

发明人： Min Kyu Lee ,  Hee Hyun Chang ,  Hee Youl Lee ,  Dong Kee Lee

IPC分类号： H01L21331

CPC分类号： H01L29/7887 ,  G11C11/5621 ,  G11C16/0458 ,  G11C2211/5612 ,  H01L21/28273

摘要： The invention relates to a flash EEPROM cell and method of manufacturing the same. The method of manufacturing a flash EEPROM cell includes sequentially forming a tunnel oxide film, a polysilicon layer for a floating gate and a hard mask layer on a semiconductor substrate; patterning the hard mask layer and then forming a hard mask layer spacer at the etching side of the patterned hard mask layer; removing the exposed portion of the polysilicon layer for the floating gate by etching process using the patterned hard mask layer and the hard mask layer spacer as etching masks thus to form first and second patterns that are separated in two; removing the patterned hard mask layer and the hard mask layer spacer and then depositing a dielectric film and a polysilicon layer for a control gate on the entire structure, thus forming a first floating gate, a second floating gate and a control gate by self-aligned etching process; and forming a drain junction and a source junction by cell source/drain ion implantation process. Thus, the present invention can prevent lower of the quality of the tunnel oxide film and thus increase the coupling ratio.

摘要翻译： 本发明涉及一种快闪EEPROM单元及其制造方法。 制造快闪EEPROM单元的方法包括在半导体衬底上依次形成隧道氧化膜，浮栅的多晶硅层和硬掩模层; 图案化硬掩模层，然后在图案化硬掩模层的蚀刻侧形成硬掩模层间隔物; 通过使用图案化的硬掩模层和硬掩模层间隔物作为蚀刻掩模的蚀刻工艺去除用于浮置栅极的多晶硅层的暴露部分，从而形成两个分离的第一和第二图案; 去除图案化的硬掩模层和硬掩模层间隔物，然后在整个结构上沉积用于控制栅极的电介质膜和多晶硅层，从而通过自对准形成第一浮栅，第二浮栅和控制栅 蚀刻工艺; 以及通过电池源/漏离子注入工艺形成漏极结和源极结。 因此，本发明可以防止隧道氧化膜的质量降低，从而增加耦合比。