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    Insulated-gate semiconductor device
    1.
    发明授权
    Insulated-gate semiconductor device 失效
    绝缘栅半导体器件

    公开(公告)号：US4213140A

    公开(公告)日：1980-07-15

    申请号：US922371

    申请日：1978-07-06

    申请人： Takeaki Okabe ,  Isao Yoshida ,  Mineo Katsueda ,  Hidefumi Ito ,  Masatomo Furumi ,  Shikayuki Ochi

    发明人： Takeaki Okabe ,  Isao Yoshida ,  Mineo Katsueda ,  Hidefumi Ito ,  Masatomo Furumi ,  Shikayuki Ochi

    IPC分类号： H03F1/52 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H03F1/42

    CPC分类号： H01L27/0251

    摘要： An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.

    摘要翻译： 一种绝缘栅半导体器件，其中第一区域形成在半导体衬底的表面中，所述第一区域具有与衬底的导电类型相反的导电类型，在所述第一区域内形成有两个绝缘栅FET， 第一绝缘栅极FET和第二绝缘栅极FET的漏极共同，漏极电连接到第一区域，第一绝缘栅极FET的栅极和第二绝缘栅极FET的源极，以及 第二绝缘栅FET的栅极和第一绝缘栅FET的源极分别连接，从而防止产生负电阻。

    High-frequency power amplifier module
    3.
    发明授权
    High-frequency power amplifier module 失效
    高频功率放大器模块

    公开(公告)号：US06384688B1

    公开(公告)日：2002-05-07

    申请号：US09673977

    申请日：2000-10-25

    申请人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

    发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

    IPC分类号： H03F304

    CPC分类号： H03F3/72 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/39 ,  H03F2200/429 ,  H04B1/0053 ,  H04B1/0458

    摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive the first frequency f1 and the second frequency f2 (f2=2×f1) is structured as explained below. This radio frequency power amplifier module for dual-band type mobile communication apparatus is comprised of a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit is constituted of a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at the harmonics in the frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at the harmonics in the frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for the matching with f1 and f2. The transmission line is set to terminate at the drain end for the even number order harmonics of f2 with the reactance existing at the drain end and a circuit element constant forming the parallel resonance circuit is set to open at the drain end for the odd number order harmonics of f2 with the series resonance circuit, transmission line and reactance existing at the drain end. With the structure explained above, since harmonics power can be controlled through control of the predetermined harmonics, high efficiency and reduction in size of the radio frequency power amplifier module can be realized.

    摘要翻译： 可以发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的用于双频带型移动通信装置的射频功率放大器模块如下所述地构成。该射频功率放大器模块用于双频 型移动通信装置包括具有匹配电路的具有在f1和f2的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。 输出电路由连接到输出晶体管的漏极端的传输线构成，并联谐振电路与传输线串联连接，以频率f2的频率谐振地谐振，串联谐振电路设置在一个 谐振电路的端部和谐振频率为频率f2的频率的谐波的接地和与并联谐振电路的另一端串联设置以用于与f1和f2匹配的输出匹配电路。 传输线被设置为在漏极端处终止，其中存在于漏极端处的电抗的偶数次谐波为f2，并且形成并联谐振电路的电路元件常数设置为在漏极端处为奇数阶开路 具有串联谐振电路的f2谐波，漏极端存在的传输线和电抗。通过上述结构，由于能够通过控制预定谐波来控制谐波功率，高效率和减小射频功率放大器的尺寸 模块可以实现。

    High frequency/high output insulated gate semiconductor device with reduced and balanced gate resistance
    4.
    发明授权
    High frequency/high output insulated gate semiconductor device with reduced and balanced gate resistance 失效
    具有降低和平衡栅极电阻的高频/高输出绝缘栅极半导体器件

    公开(公告)号：US5719429A

    公开(公告)日：1998-02-17

    申请号：US579288

    申请日：1995-12-27

    申请人： Isao Yoshida ,  Mineo Katsueda ,  Yasuo Maruyama

    发明人： Isao Yoshida ,  Mineo Katsueda ,  Yasuo Maruyama

    IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/7835 ,  H01L29/4238 ,  H01L29/4925 ,  H01L29/0692 ,  H01L29/4175 ,  H01L29/41758

    摘要： An insulated gate semiconductor device, which improves high frequency characteristics by reducing the resistance of a path from a gate bonding portion to each gate and eliminating an unbalance in resistances of respective gates, and which obtain a higher output by eliminating a limitation in current capacity due to the thickness of a first metal layer. In this insulated gate semiconductor device, a first aluminum layer is connected in parallel onto a gate electrode made of polycrystalline silicon. The adjacent gates, each having such a double layer structure, extend outside channel regions and are connected to each other. A lead-out electrode of a second aluminum layer is connected to the center of the connection portion of the adjacent gates through an opening portion. A gate bonding portion is provided at the center of the lead-out electrode. Each of source and drain electrodes is also of a double layer structure having the first aluminum layer and the second aluminum layer.

    摘要翻译： 一种绝缘栅极半导体器件，其通过降低从栅极接合部到每个栅极的路径的电阻并且消除各个栅极的电阻的不平衡来改善高频特性，并且通过消除电流容量的限制而获得更高的输出 相对于第一金属层的厚度。 在该绝缘栅极半导体器件中，第一铝层并联连接到由多晶硅制成的栅电极上。 每个具有这种双层结构的相邻栅极延伸到沟道区外部并彼此连接。 第二铝层的引出电极通过开口部连接到相邻门的连接部分的中心。 栅极接合部设置在引出电极的中心。 源极和漏极中的每一个也是具有第一铝层和第二铝层的双层结构。

    Insulated gate field effect transistor with source field shield extending over multiple region channel
    5.
    发明授权
    Insulated gate field effect transistor with source field shield extending over multiple region channel 失效
    绝缘栅场效应晶体管，源场屏蔽延伸到多个区域通道

    公开(公告)号：US4172260A

    公开(公告)日：1979-10-23

    申请号：US853548

    申请日：1977-11-21

    申请人： Takeaki Okabe ,  Isao Yoshida ,  Shikayuki Ochi ,  Hidefumi Itoh ,  Masatomo Furumi ,  Toru Toyabe ,  Mineo Katsueda ,  Yukio Shirota

    发明人： Takeaki Okabe ,  Isao Yoshida ,  Shikayuki Ochi ,  Hidefumi Itoh ,  Masatomo Furumi ,  Toru Toyabe ,  Mineo Katsueda ,  Yukio Shirota

    IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/73 ,  H01L29/78

    CPC分类号： H01L29/404 ,  H01L29/7835

    摘要： In an insulated gate field effect transistor having a source region and a drain region of the P-conductivity type which are disposed in surface portions of a semiconductor substrate of the N-conductivity type in a manner to be spaced apart from each other, a gate electrode being disposed through an insulating film on the substrate between the source region and the drain region, an insulated gate field effect transistor wherein said drain region is disposed apart from said gate electrode, two regions of an intermediate region and a high resistance region which are of the P-conductivity type and which successively extend from said drain region towards the side of said gate electrode are disposed in surface portions of the substrate situated between said drain region and said gate electrode, said intermediate region having an impurity concentration lower than that of said drain region, said high resistance region having an impurity concentration lower than that of said intermediate region, and a source electrode extends over and beyond said gate electrode and said high resistance region through said insulating film and terminates over said intermediate region.

    摘要翻译： 在绝缘栅场效应晶体管中，具有P导电类型的源区和漏区，它们以相互间隔开的方式设置在N-导电类型的半导体衬底的表面部分中，栅极 电极通过源极区域和漏极区域之间的衬底上的绝缘膜设置，绝缘栅极场效应晶体管，其中所述漏极区域与所述栅电极隔开，中间区域和高电阻区域的两个区域是 的P导电类型并且从所述漏极区域朝向所述栅电极的侧面依次延伸设置在位于所述漏极区域和所述栅电极之间的衬底的表面部分中，所述中间区域的杂质浓度低于 所述漏极区，所述高电阻区的杂质浓度低于所述中间区的杂质浓度 并且源电极通过所述绝缘膜延伸超过所述栅电极和所述高电阻区域，并且终止于所述中间区域上。

    High-frequency power amplifier module
    7.
    发明授权
    High-frequency power amplifier module 失效
    高频功率放大器模块

    公开(公告)号：US06535069B2

    公开(公告)日：2003-03-18

    申请号：US10084364

    申请日：2002-02-28

    申请人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

    发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

    IPC分类号： H03F304

    CPC分类号： H03F3/72 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/39 ,  H03F2200/429 ,  H04B1/0053 ,  H04B1/0458

    摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f1 and second frequency f2 (f2=2×f1). It includes a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f1 and f2.

    摘要翻译： 一种能够发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的双频带型移动通信装置的射频功率放大器模块。 它包括具有匹配电路的f1和f2处的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。 输出电路具有连接到输出晶体管的漏极端的传输线，串联连接到传输线的并联谐振电路，以使谐振频率为频率f2的两倍的频率，串联谐振电路设置在 谐振电路和接地谐振频率为频率f2的频率的谐波，以及与并联谐振电路的另一端串联设置的与f1和f2匹配的输出匹配电路。