公开(公告)号：US11972830B2

公开(公告)日：2024-04-30

申请号：US17865303

申请日：2022-07-14

申请人： Nantero, Inc.

发明人： Jia Luo

IPC分类号： G11C5/06 ,  G11C5/14 ,  G11C11/56 ,  G11C13/00 ,  G11C13/02

CPC分类号： G11C5/06 ,  G11C5/147 ,  G11C11/5614 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0011 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C13/0097 ,  G11C13/025 ,  G11C2213/77

摘要： Devices and methods for accessing resistive change elements in a resistive change element array to determine resistive states of the resistive change elements are disclosed. According to some aspects of the present disclosure the devices and methods access resistive change elements in a resistive change element array through a variety of operations. According to some aspects of the present disclosure the devices and methods supply an amount of current tailored for a particular operation. According to some aspects of the present disclosure the devices and methods compensate for circuit conditions of a resistive change element array by adjusting an amount of current tailored for a particular operation to compensate for circuit conditions of the resistive change element array.

公开(公告)号：US20220148652A1

公开(公告)日：2022-05-12

申请号：US17583740

申请日：2022-01-25

申请人： Nantero, Inc.

发明人： Jia Luo ,  Lee E. Cleveland ,  Ton Yan Tony Chan

IPC分类号： G11C11/56 ,  H01L27/28 ,  G11C13/00 ,  H01L45/00 ,  H01L51/00 ,  H01L51/05 ,  H01L27/24

摘要： The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

公开(公告)号：US20210319812A1

公开(公告)日：2021-10-14

申请号：US16847570

申请日：2020-04-13

申请人： Nantero, Inc.

发明人： Takao Akaogi

IPC分类号： G11C7/06 ,  G11C7/20 ,  G11C7/10 ,  G11C16/12 ,  G11C16/04

摘要： The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.

公开(公告)号：US11136239B2

公开(公告)日：2021-10-05

申请号：US16413746

申请日：2019-05-16

申请人： Nantero, Inc.

发明人： Joseph James McDermott ,  Jennifer Black ,  Rahul Sen ,  David A. Roberts ,  Billy Smith

IPC分类号： C01B32/158 ,  B82Y40/00 ,  B82Y30/00 ,  H01B1/04 ,  G11C13/02

摘要： Methods for forming a nanotube fabric with a controlled surface roughness (or smoothness) and a selected degree of rafting are disclosed by adjusting the concentration levels of a selected ionic species within a nanotube formulation used to form the nanotube fabric. In one aspect, the present disclosure provides a nanotube formulation roughness curve (and methods for generating such a curve) that can be used to select a utilizable range of ionic species concentration levels that will provide a nanotube fabric with a desired surface roughness (or smoothness) and degree of rafting. In some aspects of the present disclosure, such a nanotube formulation roughness curve can be used adjust nanotube formulation prior to a nanotube formulation deposition process to provide nanotube fabrics that are relatively smooth with a low degree of rafting.

公开(公告)号：US11117289B2

公开(公告)日：2021-09-14

申请号：US15653808

申请日：2017-07-19

申请人： Nantero, Inc.

发明人： Billy Smith ,  David Cook ,  David A. Roberts ,  Thomas R. Bengtson

IPC分类号： B29B13/00 ,  B65D41/04 ,  B65D41/62 ,  B29C41/24 ,  B05D1/00 ,  B65D47/12 ,  B05D3/00 ,  B65D51/18 ,  B65D51/16 ,  B65D81/24 ,  B05C1/00 ,  B29L7/00

摘要： The present disclosure provides methods for stabilizing a colloidal dispersion during transport for low defect tolerance applications. The methods involve eliminating fluid interfaces within a dispersion, storing the dispersion in an environment of inert gas, and degassing the dispersion. Several bottle closure devices are described which may be ideal for use with these methods, being able to seal a container filled with a dispersion, permit the removal of headspace and rapidly empty the contained dispersion. In one aspect, the device includes a vented cap and semi-permeable membrane, which allows the passage of gas into and out of the container, and a dispenser nozzle integrated with the device to allow a stored dispersion to be dispensed without removing the device from the container. In another aspect, the bottle closure device includes an attachment point for a removable downtube and dispenser nozzle.

公开(公告)号：US10937498B2

公开(公告)日：2021-03-02

申请号：US17007735

申请日：2020-08-31

申请人： Nantero, Inc.

发明人： Claude L. Bertin

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C23/00 ,  G11C29/02 ,  H03K19/17728 ,  H03K19/17736 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/17796 ,  B82Y10/00 ,  G11C13/02 ,  G11C7/14

摘要： A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

公开(公告)号：US20200262701A1

公开(公告)日：2020-08-20

申请号：US16866912

申请日：2020-05-05

申请人： Nantero, Inc.

发明人： Rahul SEN ,  Billy SMITH ,  J. Thomas KOCAB ,  Ramesh SIVARAJAN ,  Peter SITES ,  Thomas RUECKES ,  David A. ROBERTS

IPC分类号： B82Y30/00 ,  D21H15/02 ,  D21H21/52 ,  D04H1/4242 ,  D21H13/50 ,  D04H1/732 ,  H01H1/00

摘要： The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.

公开(公告)号：US10741761B2

公开(公告)日：2020-08-11

申请号：US16510952

申请日：2019-07-14

申请人： Nantero, Inc.

发明人： C. Rinn Cleavelin ,  Claude L. Bertin ,  Thomas Rueckes

IPC分类号： H01L45/00 ,  H01L27/24

摘要： Methods for scaling dimensions of resistive change elements, resistive change element arrays of scalable resistive change elements, and sealed resistive change elements are disclosed. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements and the resistive change element arrays of scalable resistive change elements reduce the impact of overlapping materials on the switching characteristics of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include sealing surfaces of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include forming barriers to copper migration in a copper back end of the line.

公开(公告)号：US10661304B2

公开(公告)日：2020-05-26

申请号：US15648868

申请日：2017-07-13

申请人： Nantero, Inc.

发明人： David A. Roberts ,  Hao-Yu Lin ,  Thomas Bengtson ,  Thomas Rueckes ,  Karl Robinson ,  H. Montgomery Manning ,  Rahul Sen ,  Michel P. Monteiro

IPC分类号： B05D1/40 ,  C01B32/168 ,  B05D1/32 ,  D04H1/4391 ,  B05D1/28 ,  B05D1/18 ,  D04H1/74 ,  D04H1/4382 ,  D04H1/4242 ,  B05D1/00 ,  B05D1/02 ,  B81B1/00 ,  B82Y30/00 ,  B82Y40/00 ,  B01L3/00

摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

公开(公告)号：US10204682B2

公开(公告)日：2019-02-12

申请号：US15707724

申请日：2017-09-18

申请人： Nantero, Inc.

发明人： Claude L. Bertin ,  Eliodor G. Ghenciu ,  Thomas Rueckes ,  H. Montgomery Manning

IPC分类号： H01L29/06 ,  G11C13/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C13/02 ,  H01L27/102 ,  H01L29/12 ,  H01L29/16 ,  H01L51/00 ,  H01L27/115 ,  H01L29/861 ,  H01L21/822 ,  H01L23/525 ,  H01L27/06 ,  H01L27/12

摘要： A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.