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    Via structure and method thereof
    4.
    发明授权
    Via structure and method thereof 有权
    其结构及其方法

    公开(公告)号：US08729713B2

    公开(公告)日：2014-05-20

    申请号：US13193313

    申请日：2011-07-28

    申请人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    发明人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    IPC分类号： H01L23/48 ,  H01L27/14 ,  H01L21/30

    CPC分类号： G02B26/0841 ,  B81B7/0006 ,  B81B2201/042 ,  B81B2203/04 ,  B81B2207/096 ,  G02B26/101

    摘要： A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).

    摘要翻译： 用于半导体器件的中间产品中的通气孔前体结构（26）具有精细的结构（27,28），并且所述中间产品具有其中不同于周围压力的压力的空腔（21）。 中间产品包括其中形成有凹部（21）的第一晶片（20）。 第一晶片被结合到包括器件层（23）的第二晶片（22）上，通过蚀刻从该器件层（23）制造结构（27,28）。 具有预定深度的孔或凹槽（26）向下延伸到装置层中，使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过器件层（23）之前被打开以形成结构（27,28 ）。

    Via structure and method thereof
    6.
    发明授权
    Via structure and method thereof 有权
    其结构及其方法

    公开(公告)号：US08592981B2

    公开(公告)日：2013-11-26

    申请号：US13141609

    申请日：2009-12-23

    申请人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Ågren ,  Niklas Svedin

    发明人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Ågren ,  Niklas Svedin

    IPC分类号： H01L29/40

    CPC分类号： G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

    摘要翻译： 本发明涉及分层的微电子和/或微机械结构，其包括在导电层之间具有绝缘层的至少三个交替的导电层。 还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。

    VIA STRUCTURE AND METHOD THEREOF
    7.
    发明申请
    VIA STRUCTURE AND METHOD THEREOF 有权
    通过其结构和方法

    公开(公告)号：US20120018898A1

    公开(公告)日：2012-01-26

    申请号：US13141609

    申请日：2009-12-23

    申请人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    发明人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    IPC分类号： H01L23/498 ,  H01L21/762 ,  H01L21/768

    CPC分类号： G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

    摘要翻译： 本发明涉及分层的微电子和/或微机械结构，其包括在导电层之间具有绝缘层的至少三个交替的导电层。 还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。

    Deflectable microstructure and method of manufacturing the same through bonding of wafers
    8.
    发明授权
    Deflectable microstructure and method of manufacturing the same through bonding of wafers 有权
    可偏转的微结构及其制造方法通过晶片的结合

    公开(公告)号：US07172911B2

    公开(公告)日：2007-02-06

    申请号：US10504714

    申请日：2003-02-14

    申请人： Edvard Kälvesten ,  Thorbjörn Ebefors ,  Niklas Svedin ,  H{dot over (a)}kan Westin

    发明人： Edvard Kälvesten ,  Thorbjörn Ebefors ,  Niklas Svedin ,  H{dot over (a)}kan Westin

    IPC分类号： H01L21/00

    CPC分类号： B81C1/0015 ,  B81B2201/042 ,  B81C1/00142 ,  B81C3/002 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/058

    摘要： A method of making a deflectable, free hanging micro structure having at least one hinge member, the method includes the steps of providing a first sacrificial wafer having a single crystalline material constituting material forming the micro structure. A second semiconductor wafer including necessary components for forming the structure in cooperation with the first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of the wafers at selected locations, the finite areas defining points of connection for joining the wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from the sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.

    摘要翻译： 一种制造具有至少一个铰链构件的可偏转的自由悬挂微结构的方法，所述方法包括以下步骤：提供具有形成微结构的单晶材料构成材料的第一牺牲晶片。 提供了包括与第一晶片协作形成结构的必要部件的第二半导体晶片。 在选定位置的一个或两个晶片上提供结构化接合材料的有限区域，限定用于接合晶片的连接点。 使用热和任选的压力将晶片接合。 牺牲材料被蚀刻离开牺牲晶片，通过光刻来图案化顶部晶片以限定具有铰链的期望的可偏转微结构，并随后进行硅蚀刻以制造结构。

    VIA STRUCTURE AND METHOD THEREOF
    10.
    发明申请
    VIA STRUCTURE AND METHOD THEREOF 有权
    通过其结构和方法

    公开(公告)号：US20120018852A1

    公开(公告)日：2012-01-26

    申请号：US13193313

    申请日：2011-07-28

    申请人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    发明人： Thorbjörn Ebefors ,  Edvard Kälvesten ,  Peter Agren ,  Niklas Svedin

    IPC分类号： H01L23/498 ,  H01L21/30

    CPC分类号： G02B26/0841 ,  B81B7/0006 ,  B81B2201/042 ,  B81B2203/04 ,  B81B2207/096 ,  G02B26/101

    摘要： A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).

    摘要翻译： 用于半导体器件的中间产品中的通气孔前体结构（26）具有精细的结构（27,28），并且所述中间产品具有其中不同于周围压力的压力的空腔（21）。 中间产品包括其中形成有凹部（21）的第一晶片（20）。 第一晶片被结合到包括器件层（23）的第二晶片（22）上，通过蚀刻从该器件层（23）制造结构（27,28）。 具有预定深度的孔或凹槽（26）向下延伸到装置层中，使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过器件层（23）之前被打开以形成结构（27,28 ）。