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11 条记录 (耗时 0.013 秒)

    Refreshing ferroelectric capacitors
    1.
    发明授权
    Refreshing ferroelectric capacitors 失效
    刷新铁电电容器

    公开(公告)号：US5270967A

    公开(公告)日：1993-12-14

    申请号：US642022

    申请日：1991-01-16

    申请人： Reza Moazzami ,  James M. Jaffe

    发明人： Reza Moazzami ,  James M. Jaffe

    IPC分类号： G11C11/409 ,  G11C11/22 ,  G11C11/406 ,  G11C14/00 ,  G11C7/00

    CPC分类号： G11C11/22 ,  G11C11/223

    摘要： The endurance of ferroelectric capacitors can be extended by refreshing the ferroelectric material. The ferroelectric material is refreshed by impressing a voltage across the ferroelectric capacitor, which voltage is higher than that which the capacitor experiences during normal operation. A memory array having ferroelectric capacitive cells can be refreshed by first reading the memory cells, temporarily storing the data in associated sense amplifiers, refreshing the memory cells by impressing a higher-than-normal voltage across the ferroelectric cell capacitors, then rewriting the temporarily stored data back into the memory cells. Refresh circuits connected between the drive line and bit line common to a number of cells are driven with voltages which are higher than the memory cell experiences during normal read operations. A V.sub.cc to ground pulse train is applied to the drive line, while an inverted waveform thereof is applied to the bit line during refresh operations.

    High density electrical ceramic oxide capacitor
    2.
    发明授权
    High density electrical ceramic oxide capacitor 失效
    高密度电陶瓷电容器

    公开(公告)号：US5543644A

    公开(公告)日：1996-08-06

    申请号：US410960

    申请日：1995-03-27

    申请人： Norman E. Abt ,  Reza Moazzami ,  Yoav Nissan-Cohen

    发明人： Norman E. Abt ,  Reza Moazzami ,  Yoav Nissan-Cohen

    IPC分类号： H01L21/02 ,  H01L27/115 ,  H01L29/78

    CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/60

    摘要： An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor is fabricated on a semiconductor substrate according to conventional techniques. A diffusion barrier is deposited over the transistor to protect it from subsequent process steps. Metal contacts are formed to contact the active transistor regions in the substrate, and additional barriers are formed to insulate the metal contacts. In a vertical embodiment, the barriers above the metal contacts can serve as bottom electrodes for the capacitor. In a lateral embodiment, the barriers on the side of the metal contacts serve as electrodes for the capacitor. Electrical ceramic oxide material is deposited between the electrode plates.

    摘要翻译： 可以在集成电路存储器件中使用的电陶瓷氧化物电容器及其制造方法。 根据常规技术在半导体衬底上制造晶体管。 扩散阻挡层沉积在晶体管上以保护其免于随后的工艺步骤。 形成金属触点以接触衬底中的有源晶体管区域，并且形成附加的栅极以使金属触点绝缘。 在垂直实施例中，金属触点之上的屏障可以用作电容器的底部电极。 在横向实施例中，金属触头一侧的屏障用作电容器的电极。 电极陶瓷氧化物材料沉积在电极板之间。

    Method of forming a semiconductor structure having an air region
    3.
    发明授权
    Method of forming a semiconductor structure having an air region 失效
    形成具有空气区域的半导体结构的方法

    公开(公告)号：US5324683A

    公开(公告)日：1994-06-28

    申请号：US70613

    申请日：1993-06-02

    申请人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

    发明人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

    IPC分类号： G01P15/08 ,  H01L21/768 ,  H01L23/482 ,  H01L21/76

    CPC分类号： G01P15/0802 ,  H01L21/7682 ,  H01L23/4821 ,  H01L2924/0002 ,  Y10S148/073

    摘要： A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.

    摘要翻译： 一种用于形成覆盖在基底层（12）上的空气区域或空气桥的方法。 空气区域（20a，20b，28a和48）形成在基底层（12）上，以提供相邻导电层的改进的介电隔离，提供空气隔离的导电互连和/或形成许多其它微结构或微器件。 通过选择性地去除牺牲隔离物（16a和16b）或通过选择性地除去牺牲层（28,40）来形成空气区域（20a，20b，28a和48）。 空气区域（20a，20b，28a和48）通过选择性生长过程或通过非保形沉积技术被密封，封闭或隔离。 空气区域（20a，20b，28a和48）可以在任何压力，气体浓度或加工条件（即温度等）下形成。 空气区域（20a，20b，28a和48）可以形成在集成电路内的任何级别。

    Ferroelectric nonvolatile dynamic random access memory device
    4.
    发明授权
    Ferroelectric nonvolatile dynamic random access memory device 失效
    铁电非易失性动态随机存取存储器件

    公开(公告)号：US5768182A

    公开(公告)日：1998-06-16

    申请号：US437537

    申请日：1995-05-09

    申请人： Chenming Hu ,  Reza Moazzami

    发明人： Chenming Hu ,  Reza Moazzami

    IPC分类号： H01L27/108 ,  H01L27/115 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/11502 ,  H01L27/10805

    摘要： A dynamic random access memory cell is described which can operate either in volatile or nonvolatile mode. When operating in a volatile mode, the memory cell operates in the same manner as a conventional dynamic random access memory cell, that is, with charge being stored and discharged from a capacitor in the memory cell. Upon receipt of a suitable signal, however, the cell can be switched to a nonvolatile mode of operation. In this mode of operation, a pulse applied to the capacitor can place a ferroelectric film in the desired polarization state to represent the binary data. The ferroelectric film will hold its polarization state until the data is recalled and the cell reverts to operating in a volatile mode.

    摘要翻译： 描述了可以以易失性或非易失性模式操作的动态随机存取存储器单元。 当以易失性模式操作时，存储单元以与常规动态随机存取存储器单元相同的方式运行，即，存储单元中的电容器被存储和放电。 然而，在接收到合适的信号时，可以将单元切换到非易失性操作模式。 在这种操作模式中，施加到电容器的脉冲可以将铁电体膜置于所需的极化状态以表示二进制数据。 铁电薄膜将保持其极化状态，直到数据被调用并且电池恢复为在易失性模式下操作。

    Process for forming a capacitor having a metal-oxide dielectric
    5.
    发明授权
    Process for forming a capacitor having a metal-oxide dielectric 失效
    用于形成具有金属氧化物电介质的电容器的工艺

    公开(公告)号：US5583068A

    公开(公告)日：1996-12-10

    申请号：US430680

    申请日：1995-04-28

    申请人： Robert E. Jones, Jr. ,  Papu D. Maniar ,  Andrew C. Campbell ,  Reza Moazzami

    发明人： Robert E. Jones, Jr. ,  Papu D. Maniar ,  Andrew C. Campbell ,  Reza Moazzami

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L27/10808 ,  H01L28/55

    摘要： A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

    摘要翻译： 具有金属氧化物电介质层的电容器形成有电连接到下面的电路元件的上电极层。 电容器可用于形成用于DRAM和NVRAM单元的存储电容器。 在形成诸如晶体管的源极/漏极区域的底层电路元件之后，在电路元件上形成金属氧化物电容器。 通过电容器形成开口并延伸到电路元件。 形成绝缘间隔物，并且形成将电路元件与金属氧化物电容器的上电极层电连接的导电部件。 公开了包括DRAM和NVRAM单元的器件及其形成方法。

    Semiconductor structure having an air region and method of forming the semiconductor structure
    6.
    发明授权
    Semiconductor structure having an air region and method of forming the semiconductor structure 失效
    具有空气区域的半导体结构和形成半导体结构的方法

    公开(公告)号：US5510645A

    公开(公告)日：1996-04-23

    申请号：US383908

    申请日：1995-01-17

    申请人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

    发明人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

    IPC分类号： G01P15/08 ,  H01L21/768 ,  H01L23/482 ,  H01L29/00

    CPC分类号： G01P15/0802 ,  H01L21/7682 ,  H01L23/4821 ,  H01L2924/0002 ,  Y10S148/073

    摘要： A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.

    摘要翻译： 一种用于形成覆盖在基底层（12）上的空气区域或空气桥的方法。 空气区域（20a，20b，28a和48）形成在基底层（12）上，以提供相邻导电层的改进的介电隔离，提供空气隔离的导电互连和/或形成许多其它微结构或微器件。 通过选择性地去除牺牲隔离物（16a和16b）或通过选择性地除去牺牲层（28,40）来形成空气区域（20a，20b，28a和48）。 空气区域（20a，20b，28a和48）通过选择性生长过程或通过非保形沉积技术被密封，封闭或隔离。 空气区域（20a，20b，28a和48）可以在任何压力，气体浓度或加工条件（即温度等）下形成。 空气区域（20a，20b，28a和48）可以形成在集成电路内的任何水平处。

    Capacitor having a metal-oxide dielectric
    8.
    发明授权
    Capacitor having a metal-oxide dielectric 失效
    具有金属氧化物电介质的电容器

    公开(公告)号：US5696394A

    公开(公告)日：1997-12-09

    申请号：US664327

    申请日：1996-06-14

    申请人： Robert Edwin Jones, Jr. ,  Papu D. Maniar ,  Andrew C. Campbell ,  Reza Moazzami

    发明人： Robert Edwin Jones, Jr. ,  Papu D. Maniar ,  Andrew C. Campbell ,  Reza Moazzami

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92

    CPC分类号： H01L27/10808 ,  H01L28/55

    摘要： A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

    摘要翻译： 具有金属氧化物电介质层的电容器形成有电连接到下面的电路元件的上电极层。 电容器可用于形成用于DRAM和NVRAM单元的存储电容器。 在形成诸如晶体管的源极/漏极区域的底层电路元件之后，在电路元件上形成金属氧化物电容器。 通过电容器形成开口并延伸到电路元件。 形成绝缘间隔物，并且形成将电路元件与金属氧化物电容器的上电极层电连接的导电部件。 公开了包括DRAM和NVRAM单元的器件及其形成方法。

    Method for forming a ceramic oxide capacitor having barrier layers
    10.
    发明授权
    Method for forming a ceramic oxide capacitor having barrier layers 失效
    形成具有阻挡层的陶瓷氧化物电容器的方法

    公开(公告)号：US5401680A

    公开(公告)日：1995-03-28

    申请号：US837271

    申请日：1992-02-18

    申请人： Norman E. Abt ,  Reza Moazzami ,  Yoav Nissan-Cohen

    发明人： Norman E. Abt ,  Reza Moazzami ,  Yoav Nissan-Cohen

    IPC分类号： H01L21/02 ,  H01L27/115 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/60

    摘要： An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor is fabricated on a semiconductor substrate according to conventional techniques. A diffusion barrier is deposited over the transistor to protect it from subsequent process steps. Metal contacts are formed to contact the active transistor regions in the substrate, and additional barriers are formed to insulate the metal contacts. In a vertical embodiment, the barriers above the metal contacts can serve as bottom electrodes for the capacitor. In a lateral embodiment, the barriers on the side of the metal contacts serve as electrodes for the capacitor. Electrical ceramic oxide material is deposited between the electrode plates.

    摘要翻译： 可以在集成电路存储器件中使用的电陶瓷氧化物电容器及其制造方法。 根据常规技术在半导体衬底上制造晶体管。 扩散阻挡层沉积在晶体管上以保护其免于随后的工艺步骤。 形成金属触点以接触衬底中的有源晶体管区域，并且形成附加的栅极以使金属触点绝缘。 在垂直实施例中，金属触点之上的屏障可以用作电容器的底部电极。 在横向实施例中，金属触头一侧的屏障用作电容器的电极。 电极陶瓷氧化物材料沉积在电极板之间。