摘要:
A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.
摘要:
A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.
摘要:
An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterised in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018cm−3, where a trapping group is a group having (i) an electron affinity EAX greater than or equal to EAsemicondand/or (ii) a reactive electron affinity EArxngreater than or equal to (EAsemicond. −2eV).
摘要:
An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.
摘要:
A method of forming a polymer device including the steps of: (i) depositing on a substrate a solution comprising a polymer or oligomer and a crosslinking moiety, to form a layer; (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, characterized in that the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 to 5 mol % based on the total number of moles of repeat units of the polymer or oligomer and the crosslinking moiety in the solution.
摘要:
An optical-limiter is disclosed herein. In an embodiment, the optical limiter comprises chemically functionalized graphene substantially spaced apart as single sheets in a substantially transparent liquid cell or solid thin film. A method of fabricating an optical response material is also disclosed.
摘要:
This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
摘要:
A functionalised graphene oxide and a method of making a functionalized graphene oxide comprising: (i) oxidizing graphite to form graphite oxide wherein the graphene sheets which make up the graphite independently of each other have a basal plane fraction of carbon atoms in the sp2-hybridised state between 0.1 and 0.9, wherein the remainder fraction comprises sp3-hybridised carbon atoms which are bonded to oxygen groups selected from hydroxyl and/or epoxy and/or carboxylic acid; and (ii) exfoliating and in-situ functionalizing the graphite oxide surface with one or more functional groups such that fictionalization of the surface is effected at a concentration greater than one functional group per 100 carbon atoms and less than one functional group per six carbon atoms. The functionalized graphene oxide is dispersible at high concentrations in appropriate solvents without aggregating or precipitating over extended periods at room temperature.
摘要:
This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
摘要:
A functionalised graphene oxide and a method of making a functionalised graphene oxide comprising: (i) oxidizing graphite to form graphite oxide wherein the graphene sheets which make up the graphite independently of each other have a basal plane fraction of carbon atoms in the sp2-hybridised state between 0.1 and 0.9, wherein the remainder fraction comprises sp3-hybridised carbon atoms which are bonded to oxygen groups selected from hydroxyl and/or epoxy and/or carboxylic acid; and (ii) exfoliating and in-situ functionalizing the graphite oxide surface with one or more functional groups such that functionalisation of the surface is effected at a concentration greater than one functional group per 100 carbon atoms and less than one functional group per six carbon atoms. The functionalised graphene oxide is dispersible at high concentrations in appropriate solvents without aggregating or precipitating over extended periods at room temperature.