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14 条记录 (耗时 0.014 秒)

    Monolithically integrated IR imaging using rare-earth up conversion materials
    1.
    发明授权
    Monolithically integrated IR imaging using rare-earth up conversion materials 有权
    使用稀土向上转换材料的单片整合红外成像

    公开(公告)号：US08178841B2

    公开(公告)日：2012-05-15

    申请号：US12510977

    申请日：2009-07-28

    申请人： Andrew Clark ,  Robin Smith ,  Richard Sewell ,  Scott Semans

    发明人： Andrew Clark ,  Robin Smith ,  Richard Sewell ,  Scott Semans

    IPC分类号： G01J1/58

    CPC分类号： H01L31/055 ,  B82Y20/00 ,  H01L31/035254 ,  H01L31/056 ,  Y02E10/52

    摘要： Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.

    摘要翻译： 长于硅带隙能量（> 1100nm）的波长的红外成像通常需要由化合物半导体（InSb或HgCdTe）制造的昂贵的焦平面阵列或使用较慢的硅微测辐射热技术。 此外，这些技术具有相对较小的阵列尺寸，而硅焦平面阵列容易获得，具有10百万像素或更多的阵列尺寸。 公开了一种新的技术来将红外光上转换成可由硅焦平面阵列或其他检测器技术检测的波长，从而实现低成本，高像素数红外成像系统。

    Photovoltaic up conversion and down conversion using rare earths
    6.
    发明申请
    Photovoltaic up conversion and down conversion using rare earths 有权
    使用稀土的光伏上变换和下变频

    公开(公告)号：US20100038521A1

    公开(公告)日：2010-02-18

    申请号：US12408297

    申请日：2009-03-20

    申请人： ANDREW CLARK ,  ROBIN SMITH ,  SCOTT SEMANS ,  RICHARD SEWELL

    发明人： ANDREW CLARK ,  ROBIN SMITH ,  SCOTT SEMANS ,  RICHARD SEWELL

    IPC分类号： H01L31/00

    CPC分类号： H01L31/055 ,  B82Y20/00 ,  H01L31/035254 ,  H01L31/056 ,  Y02E10/52

    摘要： The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.

    摘要翻译： 使用稀土（REO，N，P）基材料将长波长光子隐藏在可以吸收在可吸收一个或多个光伏器件的光伏器件（上转换）和（REO，N，P））材料中的较短波长光子上 公开了短波长光子并重新发射一个（降档）或更长波长的光子。 阳光的宽光谱范围与稀土材料中的大量能量过渡重叠，从而提供多个上转换途径。 稀土材料与硅的折射率对比使得具有> 90％峰反射率和大于150nm的阻带的DBR。

    Photovoltaic up conversion and down conversion using rare earths
    9.
    发明授权
    Photovoltaic up conversion and down conversion using rare earths 有权
    使用稀土的光伏上变换和下变频

    公开(公告)号：US08039736B2

    公开(公告)日：2011-10-18

    申请号：US12408297

    申请日：2009-03-20

    申请人： Andrew Clark ,  Robin Smith ,  Scott Semans ,  Richard Sewell

    发明人： Andrew Clark ,  Robin Smith ,  Scott Semans ,  Richard Sewell

    IPC分类号： H01L31/055 ,  H01L31/028

    CPC分类号： H01L31/055 ,  B82Y20/00 ,  H01L31/035254 ,  H01L31/056 ,  Y02E10/52

    摘要： The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.

    摘要翻译： 使用稀土（REO，N，P）基材料将长波长光子隐藏在可以吸收在可吸收一个或多个光伏器件的光伏器件（上转换）和（REO，N，P））材料中的较短波长光子上 公开了短波长光子并重新发射一个（降档）或更长波长的光子。 阳光的宽光谱范围与稀土材料中的大量能量过渡重叠，从而提供多个上转换途径。 稀土材料与硅的折射率对比使得具有> 90％峰反射率和大于150nm的阻带的DBR。