利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

87 条记录 (耗时 0.026 秒)

    SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx
    2.
    发明申请
    SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx 审中-公开
    单晶SiOx单晶REO缓冲液

    公开(公告)号：US20130334536A1

    公开(公告)日：2013-12-19

    申请号：US13771514

    申请日：2013-02-20

    申请人： Rytis Dargis ,  Andrew Clark ,  Robin Smith ,  Michael Lebby

    发明人： Rytis Dargis ,  Andrew Clark ,  Robin Smith ,  Michael Lebby

    IPC分类号： H01L29/20

    CPC分类号： H01L29/2003 ,  C30B1/02 ,  C30B25/183 ,  C30B29/22 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/0254

    摘要： A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

    摘要翻译： 一种形成位于稀土氧化物层和硅衬底之间的非晶氧化硅层的方法。 该方法包括在高于约500℃的温度下在缺氧环境中在硅衬底上提供晶体硅衬底和沉积稀土金属层。稀土金属在衬底上形成一层稀土硅化物。 第一层稀土氧化物沉积在稀土硅化物层上，其结构和晶格常数基本上类似于衬底。 该结构在氧气环境中进行退火以将稀土硅化物层转变成非晶硅层和稀土氧化物中间层，在基底和第一稀土氧化物层之间。

    Modification of REO by subsequent III-N EPI process
    4.
    发明授权
    Modification of REO by subsequent III-N EPI process 有权
    随后的III-N EPI过程修改REO

    公开(公告)号：US08501635B1

    公开(公告)日：2013-08-06

    申请号：US13631906

    申请日：2012-09-29

    申请人： Andrew Clark ,  Robin Smith ,  Rytis Dargis ,  Erdem Arkun ,  Michael Lebby

    发明人： Andrew Clark ,  Robin Smith ,  Rytis Dargis ,  Erdem Arkun ,  Michael Lebby

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631

    摘要： A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.

    摘要翻译： 在半导体衬底上生长单晶III-N材料的方法包括提供包括结晶硅或锗中的一种和稀土氧化物层的衬底。 使用在N存在下将稀土氧化物层的温度升高到大约750℃至大约1250℃的范围的方法在衬底上外延生长单层III-N材料层 或含III族的物质，由此将一部分稀土氧化物转变成新的合金。

    LATTICE MATCHED CRYSTALLINE REFLECTOR
    5.
    发明申请
    LATTICE MATCHED CRYSTALLINE REFLECTOR 审中-公开
    尺寸匹配晶体反射器

    公开(公告)号：US20130062610A1

    公开(公告)日：2013-03-14

    申请号：US13232069

    申请日：2011-09-14

    申请人： Andrew Clark ,  Michael Lebby ,  Robin Smith ,  David Williams

    发明人： Andrew Clark ,  Michael Lebby ,  Robin Smith ,  David Williams

    IPC分类号： H01L33/32 ,  H01L33/60

    CPC分类号： H01L33/10

    摘要： A virtual substrate structure with a lattice matched crystalline reflector for a light emitting device including a single crystal rare earth oxide layer deposited on a silicon substrate and substantially crystal lattice matched to the silicon substrate. A reflective layer of single crystal electrically conductive material is deposited on the layer of single crystal rare earth oxide and a layer of single crystal semiconductor material is positioned in overlying relationship to the reflective layer and substantially crystal lattice matched to the reflective layer. A single crystal rare earth oxide layer is optionally deposited between the reflective layer and the layer of semiconductor material.

    摘要翻译： 一种具有用于发光器件的晶格匹配晶体反射器的虚拟衬底结构，其包括沉积在硅衬底上并且与硅衬底基本上晶格匹配的单晶稀土氧化物层。 将单晶导电材料的反射层沉积在单晶稀土氧化物层上，并且单层半导体材料层与反射层和基本上与反射层匹配的晶格位置处于上层关系。 任选地在反射层和半导体材料层之间沉积单晶稀土氧化物层。

    III-N FET ON SILICON USING FIELD SUPPRESSING REO
    6.
    发明申请
    III-N FET ON SILICON USING FIELD SUPPRESSING REO 审中-公开
    使用场效应晶体管的III-N FET

    公开(公告)号：US20130062609A1

    公开(公告)日：2013-03-14

    申请号：US13232059

    申请日：2011-09-14

    申请人： Robin Smith ,  David Williams ,  Rytis Dargis ,  Michael Lebby

    发明人： Robin Smith ,  David Williams ,  Rytis Dargis ,  Michael Lebby

    IPC分类号： H01L29/12 ,  H01L21/20 ,  H01L29/02

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A III-N on silicon substrate with enhanced breakdown voltage including a rare earth oxide structure deposited on the silicon substrate and a layer of single crystal III-N semiconductor material deposited on the rare earth oxide structure. The rare earth oxide has a dielectric constant greater (approximately twice) than the III-N semiconductor material. The rare earth oxide structure is selected to cooperate with the layer of single crystal III-N semiconductor material to reduce the thickness of the layer of single crystal III-N semiconductor material required for a selected breakdown voltage to a value less than a thickness of the layer of single crystal III-N semiconductor material for the selected breakdown voltage without the cooperating single crystal rare earth oxide.

    摘要翻译： 具有提高的击穿电压的硅衬底上的III-N，包括沉积在硅衬底上的稀土氧化物结构和沉积在稀土氧化物结构上的单晶III-N半导体材料层。 稀土氧化物的介电常数比III-N半导体材料大（大约两倍）。 选择稀土氧化物结构以与单晶III-N半导体材料层配合，以将所选击穿电压所需的单晶III-N半导体材料层的厚度减小到小于 用于所选击穿电压的单晶III-N半导体材料层，而没有配合的单晶稀土氧化物。

    Monolithically integrated IR imaging using rare-earth up conversion materials
    7.
    发明授权
    Monolithically integrated IR imaging using rare-earth up conversion materials 有权
    使用稀土向上转换材料的单片整合红外成像

    公开(公告)号：US08178841B2

    公开(公告)日：2012-05-15

    申请号：US12510977

    申请日：2009-07-28

    申请人： Andrew Clark ,  Robin Smith ,  Richard Sewell ,  Scott Semans

    发明人： Andrew Clark ,  Robin Smith ,  Richard Sewell ,  Scott Semans

    IPC分类号： G01J1/58

    CPC分类号： H01L31/055 ,  B82Y20/00 ,  H01L31/035254 ,  H01L31/056 ,  Y02E10/52

    摘要： Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.

    摘要翻译： 长于硅带隙能量（> 1100nm）的波长的红外成像通常需要由化合物半导体（InSb或HgCdTe）制造的昂贵的焦平面阵列或使用较慢的硅微测辐射热技术。 此外，这些技术具有相对较小的阵列尺寸，而硅焦平面阵列容易获得，具有10百万像素或更多的阵列尺寸。 公开了一种新的技术来将红外光上转换成可由硅焦平面阵列或其他检测器技术检测的波长，从而实现低成本，高像素数红外成像系统。

    COMPENSATION FOR THE GOUY PHASE SHIFT IN QUASI-PHASE MATCHING
    9.
    发明申请
    COMPENSATION FOR THE GOUY PHASE SHIFT IN QUASI-PHASE MATCHING 有权
    对相位匹配中的GOUY相位移的补偿

    公开(公告)号：US20110063719A1

    公开(公告)日：2011-03-17

    申请号：US12864297

    申请日：2009-01-16

    申请人： Corin Barry Edmund Gawith ,  Peter George Robin Smith ,  Huw Edward Major

    发明人： Corin Barry Edmund Gawith ,  Peter George Robin Smith ,  Huw Edward Major

    IPC分类号： G02F1/35 ,  G02F1/37 ,  G02F1/39 ,  B29C65/00

    CPC分类号： G02F1/3544 ,  G02F1/3775 ,  G02F1/39

    摘要： A sample of nonlinear optical material for use in a nonlinear optical device contains a grating comprising alternating regions of inverted and non-inverted nonlinear coefficient of the material, with the regions separated by boundaries positioned such that the grating can provide quasi-phase matching of a selected nonlinear optical interaction, and compensate for phase mismatch arising from the Gouy phase shift of one or more focused optical beams involved in the interaction. The boundary positions can be calculated for second harmonic generation or optical parametric generation and oscillation.

    摘要翻译： 用于非线性光学器件的非线性光学材料的样本包含光栅，其包括材料的反相和非反相非线性系数的交替区域，其中由边界分隔的区域定位成使得光栅可以提供准相位匹配 选择的非线性光学相互作用，并且补偿由相互作用中涉及的一个或多个聚焦光束的Gouy相移引起的相位偏移。 可以计算二次谐波产生或光参量产生和振荡的边界位置。

    Mitoquinone derivatives used as mitochondrially targeted antioxidants
    10.
    发明授权
    Mitoquinone derivatives used as mitochondrially targeted antioxidants 有权
    用作线粒体靶向抗氧化剂的线粒体衍生物

    公开(公告)号：US07888334B2

    公开(公告)日：2011-02-15

    申请号：US10568654

    申请日：2004-08-23

    申请人： Michael Patrick Murphy ,  Robin Smith

    发明人： Michael Patrick Murphy ,  Robin Smith

    IPC分类号： A61K31/715 ,  A61K31/66

    CPC分类号： G01N33/5079 ,  C07F9/5442

    摘要： This invention relates to methods to screen for, identify, select and synthesise amphiphilic mitochondrially targeted antioxidant compounds, and compositions, dosage forms and methods reliant on said compounds. The exemplified compounds are all mitoquinone derivatives, being methoxyphenyl alkyl triphenylphosphonium or methoxy dioxocyclohexadiene alkyl triphenylphosphonium derivatives. The compounds, compositions, dosage forms and methods are useful in, for example, the treatment of diseases or conditions associated with oxidative stress.

    摘要翻译： 本发明涉及筛选，鉴定，选择和合成两亲线粒体靶向抗氧化剂化合物的方法，以及依赖于所述化合物的组合物，剂型和方法。 所示的化合物全部是线型醌衍生物，甲氧基苯基烷基三苯基鏻或甲氧基二环己二烯烷基三苯基鏻衍生物。 化合物，组合物，剂型和方法可用于例如治疗与氧化应激相关的疾病或病症。