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    Terminal structures of an ion implanter having insulated conductors with dielectric fins
    1.
    发明授权
    Terminal structures of an ion implanter having insulated conductors with dielectric fins 有权
    离子注入机的端子结构具有绝缘导体和介质翅片

    公开(公告)号：US07842934B2

    公开(公告)日：2010-11-30

    申请号：US11845441

    申请日：2007-08-27

    申请人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    发明人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    IPC分类号： G21K5/00

    CPC分类号： H01J37/3171 ,  H01J37/16 ,  H01J2237/038 ,  H01J2237/08

    摘要： Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.

    摘要翻译： 公开了具有绝缘导体和绝缘鳍片的离子注入机的端子结构。 在一个特定的示例性实施例中，离子注入机的端子结构可以用具有一个或多个介质翅片的绝缘导体来实现。 例如，离子注入机可以包括被配置为提供离子束的离子源。 离子注入机还可以包括限定空腔的端子结构，其中离子源可以至少部分地设置在空腔内。 离子注入机还可以包括绝缘导体，其具有靠近端子结构的外部部分设置的至少一个介电鳍片，以修改电场。

    Contamination reduction during ion implantation
    2.
    发明授权
    Contamination reduction during ion implantation 失效
    离子注入过程中污染减少

    公开(公告)号：US07544958B2

    公开(公告)日：2009-06-09

    申请号：US11728020

    申请日：2007-03-23

    申请人： Russell John Low

    发明人： Russell John Low

    IPC分类号： H01J37/317

    CPC分类号： H01J37/05 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31705

    摘要： A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

    摘要翻译： 一种方法包括产生具有处于第一充电状态的离子的离子束，将处于第一充电状态的离子加速到最终能量，将一些所述离子的第一充电状态改变为第二充电状态，第二充电状态小于 第一充电状态，提供具有处于第二充电状态的离子的离子束和具有不同于第二充电状态的充电状态的离子的寄生子束，将具有处于第二充电状态的离子的离子束引向晶片，并引导 寄生的子束远离晶片。 还提供了具有电荷交换装置的离子注入机。

    Techniques for detecting ion beam contamination in an ion implantation system and interlocking same
    3.
    发明授权
    Techniques for detecting ion beam contamination in an ion implantation system and interlocking same 有权
    用于检测离子注入系统中的离子束污染并互锁的技术

    公开(公告)号：US07586110B1

    公开(公告)日：2009-09-08

    申请号：US11694304

    申请日：2007-03-30

    申请人： Russell John Low

    发明人： Russell John Low

    IPC分类号： H01L21/425 ,  H01J37/317 ,  G21K5/08

    CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/0225 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/3045

    摘要： Techniques for detecting ion beam contamination in an ion implantation system and interlocking same are disclosed. An ion beam is generated. One or more ion detectors located at trajectories off of that of the ion beam. Ion current levels detected by the one or more off-trajectory detectors are used to calculate a level of ion beam charge contamination. If contamination exceeds a predetermined level, process interlock may occur to prevent dosimetry errors.

    摘要翻译： 公开了用于检测离子注入系统中的离子束污染和互锁的技术。 产生离子束。 一个或多个离子检测器位于距离离子束离子束的轨迹处。 使用由一个或多个偏离轨迹检测器检测的离子电流水平来计算离子束电荷污染的水平。 如果污染物超过预定水平，可能发生过程互锁以防止剂量误差。

    Contamination reduction during ion implantation
    4.
    发明申请
    Contamination reduction during ion implantation 失效
    离子注入过程中污染减少

    公开(公告)号：US20080230724A1

    公开(公告)日：2008-09-25

    申请号：US11728020

    申请日：2007-03-23

    申请人： Russell John Low

    发明人： Russell John Low

    IPC分类号： G21K5/04

    CPC分类号： H01J37/05 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31705

    摘要： A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

    摘要翻译： 一种方法包括产生具有处于第一充电状态的离子的离子束，将处于第一充电状态的离子加速到最终能量，将一些所述离子的第一充电状态改变为第二充电状态，第二充电状态小于 第一充电状态，提供具有处于第二充电状态的离子的离子束和具有不同于第二充电状态的充电状态的离子的寄生子束，将具有处于第二充电状态的离子的离子束引向晶片，并引导 寄生的子束远离晶片。 还提供了具有电荷交换装置的离子注入机。