摘要:
A memory device may include a memory cell array, a bloom-filter circuit, a cache memory circuit, and a selecting circuit. The bloom-filter circuit may be configured to output a determination result signal that indicates that there is a possibility that a received address is one of failed addresses corresponding to failed cells of the memory cell array. The cache memory circuit may be configured to, store the failed addresses and a first set of data corresponding to the respective failed addresses, and configured to, when the determination result signal indicates a possibility, provide a comparison result signal by determining whether received address coincides with one of the failed addresses. The selecting circuit may be configured to output either first data of the first set of data or second data of the memory cell array corresponding to the received address based on determination result signal and comparison result signal.
摘要:
Address transforming methods are provided. The methods may include generating a power-up signal when a semiconductor memory device is powered-up. The methods may further include generating a randomized output signal in response to the power-up signal. The methods may additionally include transforming bits of a first address in response to the randomized output signal to generate a second address.
摘要:
A testing apparatus for testing an organic light-emitting display apparatus including: a test chamber for retaining a first substrate having a plurality of exposed cells, each cell including an organic emission unit; a stage in the test chamber, the stage configured to support the first substrate; a plurality of probe bars, each of the probe bars including a plurality of probe blocks for respectively contacting the exposed plurality of cells of the first substrate to supply an external signal to the exposed plurality of cells; a probe bar moving unit coupled to the probe bar; and a probe bar supply unit including the plurality of probe bars, wherein the probe bar moving unit is configured to move a probe bar to and from the stage and to and from the supply unit to obtain and unload a probe bar.
摘要:
A high voltage generating circuit may include a pulse signal generator, a counter, a plurality of transmitters, and/or a plurality of pumpers. The pulse signal generator may be configured to be enabled in response to a refresh command signal to output a pulse signal. The counter may be configured to count the pulse signal and sequentially output a plurality of selection signals. The plurality of transmitters may be configured to be sequentially enabled in response to individual selection signals of the plurality of selection signals to transmit the pulse signal. The plurality of pumpers may correspond to the plurality of transmitters. Each of the plurality of pumpers may be configured to collectively generate a high voltage based on the transmitted pulse signal from a corresponding transmitter of the plurality of transmitters.
摘要:
In an example embodiment, the semiconductor device includes a clock signal generation circuit. The clock signal generation circuit is configured to generate at least one control clock signal in response to an external clock signal and a read command signal. The clock signal generation circuit includes a plurality of delay circuits, and the clock signal generation circuit is configured to selectively disable at least one of the plurality of delay circuits to reduce power consumption.
摘要:
A latency circuit for use in a semiconductor memory device includes a latency control clock generator generating an m-divided division signal from an external clock and at least one latency control clock from the m-divided division signal, wherein m is a natural number greater than or equal to 2. The latency circuit also includes a latency signal generator generating a latency signal in response to the at least one latency control clock, a latency control signal and an internal read command signal, wherein the latency control signal is generated from a column address strobe (CAS) latency and the internal read command signal is generated in response to a received read command.
摘要:
A test system includes a rotatable turntable, a loading section, a first image pickup section, a second image pickup section, a system control section and an unloading section. The loading section loads a display panel assembly onto the stage. The loading section recognizes a unique number of the display panel assembly. The first image pickup section obtains an active area image data from an active area image. A valid first active area defect is detected using an active area image data obtained from an active area image displayed on the display panel assembly. An inactive area defect is detected based on an inactive area image data and a reference inactive area image data.
摘要:
A latency circuit for use in a semiconductor memory device includes a latency control clock generator generating an m-divided division signal from an external clock and at least one latency control clock from the m-divided division signal, wherein m is a natural number greater than or equal to 2. The latency circuit also includes a latency signal generator generating a latency signal in response to the at least one latency control clock, a latency control signal and an internal read command signal, wherein the latency control signal is generated from a column address strobe (CAS) latency and the internal read command signal is generated in response to a received read command.
摘要:
A high voltage generating circuit may include a pulse signal generator, a counter, a plurality of transmitters, and/or a plurality of pumpers. The pulse signal generator may be configured to be enabled in response to a refresh command signal to output a pulse signal. The counter may be configured to count the pulse signal and sequentially output a plurality of selection signals. The plurality of transmitters may be configured to be sequentially enabled in response to individual selection signals of the plurality of selection signals to transmit the pulse signal. The plurality of pumpers may correspond to the plurality of transmitters. Each of the plurality of pumpers may be configured to collectively generate a high voltage based on the transmitted pulse signal from a corresponding transmitter of the plurality of transmitters.
摘要:
A high voltage generating circuit may include a pulse signal generator, a counter, a plurality of transmitters, and/or a plurality of pumpers. The pulse signal generator may be configured to be enabled in response to a refresh command signal to output a pulse signal. The counter may be configured to count the pulse signal and sequentially output a plurality of selection signals. The plurality of transmitters may be configured to be sequentially enabled in response to individual selection signals of the plurality of selection signals to transmit the pulse signal. The plurality of pumpers may correspond to the plurality of transmitters. Each of the plurality of pumpers may be configured to collectively generate a high voltage based on the transmitted pulse signal from a corresponding transmitter of the plurality of transmitters.