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公开(公告)号：US09110461B2
公开(公告)日：2015-08-18
申请号：US13612937
申请日：2012-09-13
IPC分类号： G05B19/18 , G05B19/418
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。
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公开(公告)号：US20130173042A1
公开(公告)日：2013-07-04
申请号：US13612937
申请日：2012-09-13
IPC分类号： G05B19/18
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。
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3.发明申请ETCHING APPARATUS, CONTROL SIMULATOR,AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权蚀刻设备，控制模拟器和半导体器件制造方法公开(公告)号：US20120310403A1
公开(公告)日：2012-12-06
申请号：US13514708
申请日：2010-12-03
IPC分类号： G05B19/18
CPC分类号： H01J37/32972 , H01J37/32935
摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
摘要翻译： 基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照 基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。 在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1） 在此期间Y被监控。 基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.
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公开(公告)号：US08992721B2
公开(公告)日：2015-03-31
申请号：US12696571
申请日：2010-01-29
申请人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
发明人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
CPC分类号： H01J37/32926 , G05B13/048 , G05B2219/31357 , H01J37/32935
摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.
摘要翻译： 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制回路中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。
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5.发明授权Etching apparatus, control simulator, and semiconductor device manufacturing method 有权蚀刻装置，控制模拟器和半导体器件制造方法公开(公告)号：US08924001B2
公开(公告)日：2014-12-30
申请号：US13514708
申请日：2010-12-03
CPC分类号： H01J37/32972 , H01J37/32935
摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
摘要翻译： 基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照 基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。 在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1） 在此期间Y被监控。 基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.
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公开(公告)号：US08282849B2
公开(公告)日：2012-10-09
申请号：US12385273
申请日：2009-04-03
IPC分类号： G01L21/30
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20090253222A1
公开(公告)日：2009-10-08
申请号：US12385273
申请日：2009-04-03
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US08784677B2
公开(公告)日：2014-07-22
申请号：US12856725
申请日：2010-08-16
IPC分类号： H01L21/66 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.
摘要翻译： 一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有 硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能， 基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤 。
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公开(公告)号：US20120018094A1
公开(公告)日：2012-01-26
申请号：US12856725
申请日：2010-08-16
IPC分类号： H01L21/66 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.
摘要翻译： 一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有 硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能， 基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤 。
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10.发明授权Particle control device and particle control method for vacuum processing apparatus 失效真空处理设备的粒子控制装置和粒子控制方法公开(公告)号：US07166480B2
公开(公告)日：2007-01-23
申请号：US10376274
申请日：2003-03-03
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01J37/32431 , H01J2237/0225
摘要： A particle control device and a particle control method are capable of controlling the occurrences of particles in a vacuum reactor. The particle control device is used in a vacuum processing apparatus having a vacuum reactor, a gas delivery unit for supplying processing gases to the vacuum reactor, and a sample table for supporting a sample in the vacuum reactor, wherein the apparatus subjects the sample to vacuum processing. The particle control device detects particles floating inside the vacuum reactor; generates apparatus condition data indicating a condition of the vacuum processing apparatus; and determines a component which is high in a particle occurrence probability based on detected particle data and apparatus condition data, thereby enabling display of the component selected as the particle source.
摘要翻译： 粒子控制装置和粒子控制方法能够控制真空反应器中颗粒的发生。 粒子控制装置用于具有真空反应器，用于向真空反应器供应处理气体的气体输送单元的真空处理装置和用于在真空反应器中支撑样品的样品台，其中该装置使样品真空 处理。 颗粒控制装置检测浮在真空反应器内的颗粒; 生成表示真空处理装置的状态的装置条件数据; 并且基于检测到的粒子数据和装置条件数据确定粒子发生概率高的分量，从而能够显示选择为粒子源的分量。
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