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公开(公告)号：US20070283998A1
公开(公告)日：2007-12-13
申请号：US11722853
申请日：2005-12-27
CPC分类号： H01L31/0322 , H01L21/02568 , H01L21/02614 , Y02E10/541
摘要： A precursor film having a required gallium component proportion is formed easily at low cost. A precursor film for use in forming the light absorption layer of a CIS type thin-film solar cell, etc., or a method for forming the film are provided. A Cu—Ga layer having a high gallium component proportion (Ga/(Ga+Cu)) of X % by weight Ga is formed as a first layer by sputtering using a precursor film comprising a Cu—Ga alloy layer having the gallium component proportion of X % by weight Ga as a target (deposition step A). Thereafter, a copper layer is formed as a second layer on the first layer by sputtering using a copper layer as a target (deposition step B) to thereby form a precursor film having the required gallium component proportion of Y % (X>Y) by weight Ga as the sum of the first layer and second layer. A method of film formation by simultaneous vapor deposition is also possible.
摘要翻译： 以低成本容易地形成具有所需镓成分比例的前体膜。 提供了用于形成CIS型薄膜太阳能电池等的光吸收层的前体膜或其形成方法。 通过使用包含具有镓成分比例的Cu-Ga合金层的前体膜通过溅射形成具有X重量％Ga的镓成分比例高（Ga /（Ga + Cu））的Cu-Ga层 的X重量％的Ga作为靶（沉积步骤A）。 此后，通过使用铜层作为靶，通过溅射在第一层上形成铜层作为第二层（沉积步骤B），从而通过以下方式形成具有所需镓成分比例为Y％（X> Y）的前体膜 重量Ga作为第一层和第二层的总和。 通过同时气相沉积的成膜方法也是可行的。
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2.发明申请Cis Compound Semiconductor Thin-Film Solar Cell and Method of Forming Light Absorption Layer of the Solar Cell 审中-公开Cis复合半导体薄膜太阳能电池及其形成太阳能电池的光吸收层的方法公开(公告)号：US20070289624A1
公开(公告)日：2007-12-20
申请号：US11659880
申请日：2005-08-09
IPC分类号： H01L31/0272
CPC分类号： H01L31/0322 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： Film formation is conducted at a low temperature to improve conversion efficiency and productivity and to enable a wider choice of substrate materials to be used. The invention relates to the light absorption layer of a CIS compound semiconductor thin-film solar cell and to a method of forming the layer. The light absorption layer comprises a compound represented by Cux(In1-yGay)(Se1-zSz)2 and having a chalcopyrite type structure, the proportions of the components satisfying 0.86≦x≦0.98, 0.05≦y≦0.25, 0≦z≦0.3, x=αT+β, α=0.015y−0.00025, and β=−7.9y+1.105, provided that T (° C.) is anneal temperature and the allowable range for x is ±0.02. The layer is formed by the selenization method at a low temperature (about 500≦T≦550). As the substrate is used a soda-lime glass having a low melting point.
摘要翻译： 在低温下进行成膜以提高转换效率和生产率，并能够使用更广泛的基板材料。 本发明涉及CIS化合物半导体薄膜太阳能电池的光吸收层及其形成方法。 光吸收层包含由Cu x Si（In 1-y Ga y y）（Se 1-z）表示的化合物， 具有黄铜矿型结构，组分的比例满足0.86 <= x <= 0.98,0.05 <= y <= 0.25,0 <= z <= 0.3，x =αT+β，α= 0.015y-0.00025和β= -7.9y + 1.105，条件是T（℃）为退火温度，x的允许范围为±0.02。 该层通过硒化法在低温（约500 <= T <= 550）下形成。 由于使用的基材是低熔点的钠钙玻璃。
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公开(公告)号：US20110067755A1
公开(公告)日：2011-03-24
申请号：US12993232
申请日：2009-05-19
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/0322 , C23C14/185 , C23C14/3414 , C23C14/5866 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02579 , H01L21/02614 , H01L21/02631 , H01L21/02658 , H01L31/0323 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film (30a) at least comprising a first metal layer (31, 32) containing a I group element and a second metal layer (33) containing a III group element; and selenizing and/or sulfurizing the metal precursor film, and the above-mentioned forming the metal precursor film includes forming either one of the first metal layer (31, 32) or the second metal layer (33) of at least two layers including a layer (31) that contains an alkali metal and a layer (32) that substantially does not contain the alkali metal.
摘要翻译： 实现高光电转换效率的CIS系薄膜太阳能电池的制造方法包括：在基板上形成背面电极层; 在其上形成p型CIS基光吸收层; 并进一步形成n型透明导电膜。 上述形成p型CIS系的光吸收层包括：形成至少包含含有I族元素的第一金属层（31,32）和第二金属层（33）的金属前体膜（30a） 含有III族元素; 并且对金属前体膜进行硒化和/或硫化，并且上述形成金属前体膜包括形成至少两层的第一金属层（31,32）或第二金属层（33）中的任一个，包括 含有碱金属的层（31）和基本上不含碱金属的层（32）。
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公开(公告)号：US20100210064A1
公开(公告)日：2010-08-19
申请号：US12671068
申请日：2009-05-18
IPC分类号： H01L31/032
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.
摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。
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5.发明申请公开(公告)号：US20080110495A1
公开(公告)日：2008-05-15
申请号：US11722604
申请日：2005-12-26
IPC分类号： H01L31/00
CPC分类号： C23C8/06 , C23C8/00 , C23C8/02 , C23C10/02 , C23C12/00 , C23C14/5866 , H01L31/0322 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： A simple device is used to make the temperature in an apparatus even and improve the state of being in contact with reactant gases, selenium, and sulfur.A fan 3 as a device for atmosphere homogenization is disposed in an apparatus, and the work is disposed in the manner which enables a reactant gas to circulate smoothly. Namely, flat platy works 2 are disposed apart from each other at a certain distance parallel to the direction of the major axis of the apparatus while keeping the plates vertical so that the apparatus has passages within the group of works and has gas passages over and under the works and on both sides thereof. Thus, each work is apt to come into contact with the reactant gases in the apparatus and the temperature in the apparatus is even. The state of being in contact with the reactant gases, selenium, and sulfur is improved.
摘要翻译： 使用简单的装置来使设备中的温度均匀并且改善与反应物气体，硒和硫接触的状态。 作为大气均质化装置的风扇3设置在设备中，并且以能使反应气体顺利循环的方式设置工件。 也就是说，平板状工件2在平行于设备的长轴方向的一定距离处彼此分开地设置，同时保持板垂直，使得设备在工作组内具有通道，并具有上下通道 作品及其两面。 因此，每个工作都容易与装置中的反应气体接触，并且装置中的温度是均匀的。 与反应物气体，硒和硫接触的状态得到改善。
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公开(公告)号：US07989256B2
公开(公告)日：2011-08-02
申请号：US12671068
申请日：2009-05-18
IPC分类号： H01L21/00
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.
摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。
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7.发明申请Process For Producing Zno Transparent Conductive Film By Mocvd (Metal-Organic Chemical Vapor Deposition) Method 审中-公开通过Mocvd（金属有机化学气相沉积）方法生产ZnO透明导电膜的方法公开(公告)号：US20080032044A1
公开(公告)日：2008-02-07
申请号：US11722861
申请日：2005-12-27
申请人： Satoru Kuriyagawa , Yoshiaki Tanaka
发明人： Satoru Kuriyagawa , Yoshiaki Tanaka
IPC分类号： C23C16/06
CPC分类号： H01L31/1884 , C23C16/407 , Y02E10/50
摘要： The triethylaluminum contained as an impurity in low-purity raw-material diethylzinc, which is inexpensive, is utilized as an additive to reduce the cost of film formation. Diethylzinc having a low purity (99.99-98% or 99.99-90%) is used as a raw material to produce a ZnO transparent conductive film by the MOCVD (metal-organic chemical vapor deposition) method. Water vapor (H2O) is used as an oxidizing agent and the triethylaluminum contained as an impurity in the raw material is utilized as an additive (diborane is further added as an additive) to cause the diethylzinc, the water vapor (H2O), and the triethylaluminum (and the diborane) to undergo a vapor-phase reaction to produce a ZnO transparent conductive film.
摘要翻译： 作为低成本的原料二乙基锌中的杂质含有的三乙基铝被用作添加剂以降低成膜成本。 使用低纯度的二乙基锌（99.99-98％或99.99-90％）作为原料，通过MOCVD（金属有机化学气相沉积）法制造ZnO透明导电膜。 使用水蒸汽（H 2 O 2）作为氧化剂，将作为原料的杂质含有的三乙基铝用作添加剂（进一步添加乙硼烷作为添加剂），使二乙基锌， 水蒸汽（H 2 O 2）和三乙基铝（和乙硼烷）进行气相反应以制备ZnO透明导电膜。
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公开(公告)号：US20080271781A1
公开(公告)日：2008-11-06
申请号：US11721381
申请日：2005-12-09
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , H01L31/022425 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： This invention provides a CIS-based thin film solar battery and a process for producing the same in which the formation of an alkali barrier layer and a metal backside electrode layer is carried out at a low cost in a short time to prevent such an unfavorable phenomenon that a light absorbing layer is separated from the interface of the light absorbing layer and the metal backside electrode layer. The CIS-based thin film solar battery (1) comprises a glass substrate (2), an alkali-free layer (7) such as silica, a metal backside electrode layer (3) having a laminate structure, a p-type CIS-based light absorbing layer (4), a high-resistance buffer layer (5), and an n-type window layer (6) stacked in that order. The layer (7), either alone or together with a first layer (3a) in the layer (3), can function as an alkali barrier layer (8) that can prevent and control the thermal diffusion of an alkali component into the light absorbing layer during the formation of the layer (4) from the substrate (2). In the layer (3a), crystal grains are fine and has high density. After the formation of the layer (7) on the substrate by RF or DC sputtering, the layer (3) is continuously formed on the layer (7) by DC sputtering.
摘要翻译： 本发明提供了一种基于CIS的薄膜太阳能电池及其制造方法，其中在短时间内以低成本进行碱阻挡层和金属背面电极层的形成以防止这种不利现象 光吸收层与金属背面电极层的界面分离。 基于CIS的薄膜太阳能电池（1）包括玻璃基板（2），无碱层（7）如二氧化硅，具有层压结构的金属背面电极层（3），p型CIS- 基于光的吸收层（4），高电阻缓冲层（5）和n型窗口层（6）。 单独或与层（3）中的第一层（3a）一起的层（7）可以用作可以防止和控制碱成分进入光的热扩散的碱阻挡层（8） 在从衬底（2）形成层（4）期间形成吸收层。 在层（3a）中，晶粒细，密度高。 在通过RF或DC溅射在衬底上形成层（7）之后，通过DC溅射在层（7）上连续形成层（3）。
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公开(公告)号：US09162307B2
公开(公告)日：2015-10-20
申请号：US13387136
申请日：2011-02-15
CPC分类号： B23K9/0673 , B23K9/0738 , B23K9/0956 , B23K9/23 , B23K2103/10
摘要： If arc interruption occurs during AC arc welding, a first AC frequency predetermined for normal welding is switched to a second AC frequency higher than the first AC frequency. This allows the arc to be reignited without applying a high frequency high voltage, thereby preventing the damage of the surface of the weld bead or communication failure due to the high frequency high voltage.
摘要翻译： 如果在交流电弧焊接期间发生电弧中断，则为正常焊接而预先设定的第一交流频率切换为高于第一交流频率的第二交流频率。 这样可以在不施加高频高电压的情况下重新点火，从而防止焊道表面的损坏或由于高频高电压引起的通信故障。
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公开(公告)号：US08818213B2
公开(公告)日：2014-08-26
申请号：US13587556
申请日：2012-08-16
申请人： Yoshiaki Tanaka
发明人： Yoshiaki Tanaka
IPC分类号： G03G15/00
CPC分类号： G03G15/00 , G03G21/1871 , G03G21/1875
摘要： According to one embodiment, a process unit includes a process section present around an image bearing member, attached and detached to and from a body, including a rotating section, and configured to apply an image forming process to the image bearing member, a moving section present on a shaft of the rotating section and configured to slide to a first position close to the rotating section and a second position away from the rotating section, and a positioning section present between the rotating section and the moving section and configured to move following the rotating section and hold the moving section in the first position and the second position.
摘要翻译： 根据一个实施例，处理单元包括存在于图像承载部件周围的处理部件，该部件与包括旋转部分的主体相连和分离，并且构造成对图像承载部件施加图像形成处理;移动部件 存在于所述旋转部的轴上并被配置为滑动到靠近所述旋转部的第一位置和远离所述旋转部的第二位置;以及定位部，其位于所述旋转部与所述移动部之间， 旋转部分并且将移动部分保持在第一位置和第二位置。
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