公开(公告)号：US06891202B2

公开(公告)日：2005-05-10

申请号：US10319962

申请日：2002-12-16

Applicant: Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

Inventor： Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

IPC: H01L29/165 ,  H01L29/22 ,  H01L29/40 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/153 ,  H01L33/14 ,  H01S5/00 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343 ,  H01L33/00

CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

Abstract: An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

Abstract translation: 诸如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件的有源半导体器件包括形成在衬底上的多个半导体层，其中一层是有源区 。 通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。 阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。 此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。 在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。 用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。 因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

公开(公告)号：US07087449B2

公开(公告)日：2006-08-08

申请号：US10875418

申请日：2004-06-24

Applicant: Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

Inventor： Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

IPC: H01L21/20

CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

Abstract: An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

公开(公告)号：US07092425B1

公开(公告)日：2006-08-15

申请号：US09680726

申请日：2000-10-05

Applicant: Richard P. Schneider ,  Frank H. Peters ,  An-Nien Cheng ,  Laura Giovane ,  Hao-chung Kuo ,  Sheila K. Mathis

Inventor： Richard P. Schneider ,  Frank H. Peters ,  An-Nien Cheng ,  Laura Giovane ,  Hao-chung Kuo ,  Sheila K. Mathis

IPC: H01S5/183

CPC classification number: H01S5/18391 ,  H01S5/0207 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/3203 ,  H01S2301/18

Abstract: Using lateral physical modulation, the optical properties of VCSELs can be stabilized and controlled by spatially varying the characteristics of the device material. This results in stabilization of the linewidth, the numerical aperture, the near and far field, as a function of bias and temperature. A VCSEL includes a substrate, an active region sandwiched between an upper and lower distributed Bragg reflector (DBRs), and electrical contacts. A light emission property e.g. the index of refraction, may be varied by patterning or texturing the surface of the substrate prior to growth of the epitaxial DBR layers or at least one layer of either the upper or lower DBRs, or by inserting a non-planar layer.

Abstract translation: 通过使用横向物理调制，可以通过空间变化器件材料的特性来稳定和控制VCSEL的光学性质。 这导致线宽，数值孔径，近场和远场的稳定，作为偏置和温度的函数。 VCSEL包括衬底，夹在上和下分布布拉格反射器（DBR）之间的有源区和电触点。 发光特性例如 折射率可以通过在外延DBR层或至少一层上DBR或下DBR的生长之前图案化或纹理化衬底的表面而改变，或者通过插入非平面层来改变。

公开(公告)号：US06921925B2

公开(公告)日：2005-07-26

申请号：US10944334

申请日：2004-09-17

Applicant: Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

Inventor： Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

IPC: H01L29/165 ,  H01L29/22 ,  H01L29/40 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/153 ,  H01L33/14 ,  H01S5/00 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343 ,  H01L33/00

CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

Abstract translation: 在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层 其中一层是活性区的基底。 通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。 阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。 此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。 在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。 用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。 因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。