公开(公告)号：US20070037073A1

公开(公告)日：2007-02-15

申请号：US11585180

申请日：2006-10-24

申请人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

发明人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

IPC分类号： G21G4/00 ,  C23C14/32 ,  C23C14/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  C23C14/0641 ,  G03F1/68

摘要： For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.

摘要翻译： 为了有效地制造具有均匀产品质量的半色调相移掩模坯料，这使得能够防止坯料质量产生时的光学特性变化，提供了一种制造半色调相移掩模坯料的方法，每个具有相移 在透明基板上含有至少一个半色调膜的薄膜，包括提供含有金属和硅的靶并在含有反应性气体的气氛中进行反应性溅射的步骤，以在所述透明基底上形成所述半色调膜 基板，其中通过所述反应性溅射形成半色调膜是使用所选择的目标来选择具有选择的金属/硅组分比以便得到半色调膜的预定光学性质的靶，在 反应气体流量选自放电特性对反应气体的流量变化稳定的区域。

公开(公告)号：US07579287B2

公开(公告)日：2009-08-25

申请号：US11501005

申请日：2006-08-09

申请人： Shigenori Ishihara ,  Nobuo Kawase

发明人： Shigenori Ishihara ,  Nobuo Kawase

IPC分类号： H01L21/00

CPC分类号： H01L21/02068 ,  B41J2/1603 ,  B41J2/1606 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/28202 ,  H01L21/306 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.

摘要翻译： 提供一种处理含有水分的物体的方法以有效地去除水分并防止水分的再吸附。 特别地，该方法具有除去包含被激发的氢，氘，氘代氢或氚的气氛中的物体中含有的水分的步骤。

公开(公告)号：US07141339B2

公开(公告)日：2006-11-28

申请号：US10689527

申请日：2003-10-21

申请人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

发明人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

IPC分类号： G03F1/00 ,  C23C14/00

CPC分类号： G03F1/32 ,  C23C14/0641 ,  G03F1/68

摘要： For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.

公开(公告)号：US20050136576A1

公开(公告)日：2005-06-23

申请号：US11002903

申请日：2004-12-03

申请人： Shigenori Ishihara ,  Hirohisa Oda ,  Yuu Nishimura

发明人： Shigenori Ishihara ,  Hirohisa Oda ,  Yuu Nishimura

IPC分类号： H05H1/46 ,  F21V9/04 ,  F21V9/06 ,  G02B5/08 ,  G02B5/20 ,  H01L21/00 ,  H01L21/30 ,  H01L21/304 ,  H01L21/322 ,  H01L21/84

CPC分类号： H01L21/67069 ,  H01L21/3003

摘要： A substrate to be treated is treated in a vacuum chamber in such a state that a rear surface, opposite to a surface to be treated, of the substrate is disposed toward and upstream direction of a treatment gas containing hydrogen atom, by use of hydrogen plasma of the treatment gas. The plasma treatment is performed in such a state that the substrate to be treated is mounted on a substrate mounting table disposed in the chamber so that a surface of a device structure portion is disposed toward the substrate mounting table side.

摘要翻译： 将待处理的基板在真空室中进行处理，使得通过使用氢等离子体将基板的与待处理的表面相对的后表面朝向包含氢原子的处理气体的上游方向设置 的处理气体。 在待处理基板安装在设置在室内的基板安装台上的状态下进行等离子体处理，使得器件结构部分的表面朝向基板安装台侧设置。

公开(公告)号：US20050090078A1

公开(公告)日：2005-04-28

申请号：US10766865

申请日：2004-01-30

申请人： Shigenori Ishihara

发明人： Shigenori Ishihara

IPC分类号： H01L21/205 ,  H01L21/30 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786 ,  H01L21/26 ,  H01L21/477

CPC分类号： H01J37/32192 ,  H01L21/3003 ,  H01L21/306

摘要： A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material includes the steps of placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature, controlling a pressure in the process chamber to a predetermined pressure, introducing the process gas into the process chamber, and introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 1011 cm−3 or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.

摘要翻译： 一种处理方法，其使用包含至少氢的处理气体等离子体以终止至少部分地包含硅系材料的物体中的悬挂键，包括以下步骤：将物体放置在包括电介质窗口的处理室中的基座上，并且 并且将所述基座的温度控制在预定温度，将所述处理室中的压力控制到预定压力，将所述处理气体引入所述处理室中，并且经由所述电介质窗口将用于等离子体处理的微波引入所述处理室 物体进入处理室，使得处理气体的等离子体具有10〜11 -3 -3以上的等离子体密度，其中维持电介质窗和物体之间的距离 在20毫米和200毫米之间。

公开(公告)号：US08298627B2

公开(公告)日：2012-10-30

申请号：US13017875

申请日：2011-01-31

申请人： Takashi Minami ,  Shigenori Ishihara

发明人： Takashi Minami ,  Shigenori Ishihara

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： H01L21/3145 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32743 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

摘要： The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder (2) between a reaction chamber (8) and a transfer chamber (9) lying on the under side thereof. Moreover, it has such structure that the exhaust conductance of the reaction chamber (8) becomes large when the substrate holder (2) lies in the transfer chamber. Upon the conditioning, the substrate holder (2) is moved to the transfer chamber (9) to allow diffusing species to spread widely, thereby effectively performing the conditioning for both reaction chamber (8) and transfer chamber (9) in the vacuum chamber (1).

摘要翻译： 本发明提供能够对整个真空室进行调节的等离子体处理装置和调节方法。 根据本发明的实施例的等离子体处理装置设置有移动装置，用于在位于其下侧的反应室（8）和转印室（9）之间移动衬底保持器（2）。 此外，当衬底保持器（2）位于传送室中时，反应室（8）的排气电导变大的结构。 在调理时，将基板保持架（2）移动到传送室（9），以使扩散物质广泛扩散，从而有效地对真空室（8）和反应室（9）两者进行调节 1）。

公开(公告)号：US20120031748A1

公开(公告)日：2012-02-09

申请号：US13197843

申请日：2011-08-04

申请人： Shigenori Ishihara

发明人： Shigenori Ishihara

IPC分类号： C23C14/35

CPC分类号： C23C14/0042 ,  C23C14/0063 ,  C23C14/0068 ,  C23C14/0641 ,  C23C14/35

摘要： The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.

摘要翻译： 本发明提供一种不易受到由恢复过程引起的屏蔽板的尺寸和形状的影响的成膜设备和成膜方法。 一种成膜设备包括一屏蔽板，该屏蔽板包围一台台上的工艺目标基板与一真空室中彼此面对的靶之间的溅射空间，并通过使至少一种反应性 气体和成膜材料彼此反应。 成膜装置被配置为控制将被引入溅射空间的气体的流量与被引入到真空室的内壁和屏蔽板之间的空间的流量的比率， 基于由压力检测装置测量的溅射空间的压力值。

公开(公告)号：US09175377B2

公开(公告)日：2015-11-03

申请号：US13197843

申请日：2011-08-04

申请人： Shigenori Ishihara

发明人： Shigenori Ishihara

IPC分类号： C23C14/35 ,  C23C14/00 ,  C23C14/06

CPC分类号： C23C14/0042 ,  C23C14/0063 ,  C23C14/0068 ,  C23C14/0641 ,  C23C14/35

摘要： The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.

摘要翻译： 本发明提供一种不易受到由恢复过程引起的屏蔽板的尺寸和形状的影响的成膜设备和成膜方法。 一种成膜设备包括一屏蔽板，该屏蔽板包围一台台上的工艺目标基板与一真空室中彼此面对的靶之间的溅射空间，并通过使至少一种反应性 气体和成膜材料彼此反应。 成膜装置被配置为控制将被引入溅射空间的气体的流量与被引入到真空室的内壁和屏蔽板之间的空间的流量的比率， 基于由压力检测装置测量的溅射空间的压力值。

公开(公告)号：US20070037413A1

公开(公告)日：2007-02-15

申请号：US11501005

申请日：2006-08-09

申请人： Shigenori Ishihara ,  Nobuo Kawase

发明人： Shigenori Ishihara ,  Nobuo Kawase

IPC分类号： H01L21/31 ,  H01L29/76

CPC分类号： H01L21/02068 ,  B41J2/1603 ,  B41J2/1606 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/28202 ,  H01L21/306 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.

摘要翻译： 提供一种处理含有水分的物体的方法以有效地去除水分并防止水分的再吸附。 特别地，该方法具有除去包含被激发的氢，氘，氘代氢或氚的气氛中的物体中含有的水分的步骤。

公开(公告)号：US07026077B2

公开(公告)日：2006-04-11

申请号：US10420005

申请日：2003-04-22

申请人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

发明人： Masaru Mitsui ,  Toshiyuki Suzuki ,  Shigenori Ishihara

IPC分类号： G03F1/00

CPC分类号： C23C14/5806 ,  C23C14/185 ,  C23C14/541 ,  G03F1/32 ,  G03F1/68

摘要： A method of manufacturing a photomask blank having at least a film for forming a mask pattern on a transparent substrate comprises the steps of causing a sputtering atmosphere to contain at least a helium gas to form a film for forming the mask pattern by sputtering, and heating the transparent substrate during or after the film forming step.