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1.发明申请NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING DEVICE 有权NITRIDE SEMICONDUCTOR ULTRAVIOLET LED发光设备公开(公告)号：US20130146916A1
公开(公告)日：2013-06-13
申请号：US13688335
申请日：2012-11-29
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mgx1Zn1-x1O (0
摘要翻译： 氮化物半导体紫外线发光元件包括：至少一个第一导电型氮化物半导体层，氮化物半导体发光层，至少一个第二导电型氮化物半导体层和结晶的Mg x ZnZi 1-x O 1的透明导电膜（0
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公开(公告)号：US07816162B2
公开(公告)日：2010-10-19
申请号：US12500442
申请日：2009-07-09
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302 , H01L21/311
CPC分类号： H01L25/167 , B82Y20/00 , H01L2924/0002 , H01S5/0425 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/34313 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.
摘要翻译： 在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。 然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。 此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。 然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。 在涂有薄膜的表面上的法线矢量具有向上的分量。
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公开(公告)号：US08212467B2
公开(公告)日：2012-07-03
申请号：US12994583
申请日：2009-05-25
IPC分类号： H01J1/62
CPC分类号： H01L33/505 , H01L33/483 , H01L33/507 , H01L2224/48091 , H01S5/02212 , H01S5/02288 , H01L2924/00014
摘要： A light emitting device includes a light emitting element, a cap sealing the light emitting element, and a light conversion structural section covering an upper surface of the cap. The cap includes a base section having a hole for taking out light emitted from the light emitting element, and a glass section overlaid on the hole. The glass section is provided outside the base section, and the light conversion structural section is provided outside the glass section. According to this light emitting device, manufacturing cost can be reduced by suppressing reduction in yield.
摘要翻译： 发光装置包括发光元件，密封发光元件的盖和覆盖盖的上表面的光转换结构部。 盖包括具有用于取出从发光元件发出的光的孔的基部和覆盖在该孔上的玻璃部。 玻璃部设置在基部的外侧，光转换结构部设置在玻璃部的外侧。 根据该发光装置，通过抑制成品率的降低，可以降低制造成本。
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公开(公告)号：US20090275160A1
公开(公告)日：2009-11-05
申请号：US12500442
申请日：2009-07-09
IPC分类号： H01L21/20
CPC分类号： H01L25/167 , B82Y20/00 , H01L2924/0002 , H01S5/0425 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/34313 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.
摘要翻译： 在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。 然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。 此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。 然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。 在涂有薄膜的表面上的法线矢量具有向上的分量。
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公开(公告)号：US07123641B2
公开(公告)日：2006-10-17
申请号：US10788411
申请日：2004-03-01
IPC分类号： H01S5/323
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/2223 , H01S5/2231 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S5/34373
摘要： In a semiconductor laser device having an oscillation wavelength of larger than 760 nm and smaller than 800 nm, on an n-type GaAs substrate (101), there are stacked in sequence an n-type first and second lower cladding layers (103, 104), a lower guide layer (106), a strained InGaAsP multiquantum well active layer (107), an upper guide layer (109), and a p-type upper cladding layer (110). Since the lower guide layer (106) is formed of InGaP, leakage of carriers from an active region is reduced. Also, since the upper guide layer (109) is formed of AlGaAs, an overflow of carriers (electrons in particular) is suppressed.
摘要翻译： 在具有大于760nm且小于800nm的振荡波长的半导体激光器件中，在n型GaAs衬底（101）上依次堆叠n型第一和第二下覆层（103,104 ），下引导层（106），应变InGaAsP多量阱有源层（107），上引导层（109）和p型上覆层（110）。 由于下引导层（106）由InGaP形成，因此载流子从有源区域泄漏减少。 此外，由于上引导层（109）由AlGaAs形成，因此抑制载流子（特别是电子）的溢出。
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6.发明授权公开(公告)号：US06813299B2
公开(公告)日：2004-11-02
申请号：US10341246
申请日：2003-01-14
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/3403 , H01S5/3434 , H01S5/34373 , H01S5/34386
摘要： There is provided a semiconductor laser device, which has an oscillation wavelength that is greater than 760 nm and smaller than 800 nm, high reliability, long operating life and a high output, and an optical disk reproducing and recording apparatus that employs the semiconductor laser device. At least first and second lower clad layers 103 and 133, a quantum well active layer 105 constructed of well layers and barrier layers, first and second upper clad layers 107 and 109 are laminated on a GaAs substrate 101. The well layer is made of InGaAsP. The well layer has a great layer thickness d of 160 Å, and assuming that an optical confinement coefficient in one layer of the well layer is &Ggr;, then &Ggr;/d is set at a great value of 2.2×10−4 Å−1.
摘要翻译： 提供了具有大于760nm且小于800nm的振荡波长，高可靠性，长使用寿命和高输出的半导体激光装置，以及采用半导体激光装置的光盘再现和记录装置 。 至少第一和第二下包层103和133，由阱层和阻挡层构成的量子阱有源层105，第一和第二上包层107和109层压在GaAs衬底101上。阱层由InGaAsP 。 阱层具有大的层厚度d，并且假设阱层的一层中的光限制系数是伽马，则伽马/ d设定为2.2×10 -4的极大值， 1>。
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7.发明授权Semiconductor laser device and optical disk recording and reproducing apparatus 失效半导体激光装置和光盘记录和再现装置公开(公告)号：US06775311B2
公开(公告)日：2004-08-10
申请号：US10241838
申请日：2002-09-12
申请人： Shuichi Hirukawa
发明人： Shuichi Hirukawa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/2045 , H01S5/2231 , H01S5/3403 , H01S5/34326 , H01S5/3434 , H01S5/34346
摘要： There is provided a semiconductor laser device implementing a single transverse mode oscillation in an oscillation wavelength of 780 nm band and also having high reliability and long life in high-output driving state, and an optical disk recording and reproducing apparatus with use of the semiconductor laser device. A multiple quantum well active layer 105 is composed of InGaAsP, and a first cladding layer 103, a second cladding layer 107, a third cladding layer 109, and a first current blocking layer 112 are structured from III-V group compound semiconductor containing only As as V group element. Inside the first current blocking layer 112, a hollow portion 130 is provided in the vicinity of and approximately parallel to the ridge stripe-shaped third cladding layer 109.
摘要翻译： 提供了在780nm波段的振荡波长中实现单横波振荡并且在高输出驱动状态下具有高可靠性和长寿命的半导体激光器件，以及使用半导体激光器的光盘记录和再现装置 设备。 多量子阱有源层105由InGaAsP构成，第一包层103，第二包层107，第三包层109和第一电流阻挡层112由仅包含As的III-V族化合物半导体构成 作为V组元素。 在第一电流阻挡层112的内部，在脊条状的第三包覆层109的附近并且大致平行地设置有中空部130。
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公开(公告)号：US20110068679A1
公开(公告)日：2011-03-24
申请号：US12994583
申请日：2009-05-25
CPC分类号： H01L33/505 , H01L33/483 , H01L33/507 , H01L2224/48091 , H01S5/02212 , H01S5/02288 , H01L2924/00014
摘要： Provided is a light emitting device of which manufacturing cost can be reduced by suppressing reduction in yield. The present invention relates to a light emitting device including a light emitting element (11), a cap (20) sealing the light emitting element (11), and a light conversion structural section (16) covering an upper surface of the cap (20), wherein the cap (20) includes a base section (14) having a hole for taking out light emitted from the light emitting element (11), and a glass section (15) overlaid on the hole, the glass section (15) is provided outside the base section (14), and the light conversion structural section (16) is provided outside the glass section (15).
摘要翻译： 提供了通过抑制产量降低可以降低制造成本的发光装置。 本发明涉及包括发光元件（11），密封发光元件（11）的盖（20）和覆盖盖（20）的上表面的光转换结构部分（16）的发光器件 ），其中所述盖（20）包括具有用于取出从所述发光元件（11）发射的光的孔的基部（14）和覆盖在所述孔上的玻璃部（15），所述玻璃部（15） 设置在所述基部（14）的外侧，并且所述光转换结构部（16）设置在所述玻璃部（15）的外部。
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9.发明授权Semiconductor device such as semiconductor laser device and manufacturing method therefor, and optical transmission module and optical disk unit employing the semiconductor laser device 有权半导体装置，例如半导体激光装置及其制造方法，以及采用半导体激光装置的光传输模块和光盘装置公开(公告)号：US07760783B2
公开(公告)日：2010-07-20
申请号：US11357941
申请日：2006-02-22
IPC分类号： H01S5/00
CPC分类号： H01L25/167 , B82Y20/00 , H01L2924/0002 , H01S5/0425 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/34313 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.
摘要翻译： 在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。 然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。 此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。 然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。 在涂有薄膜的表面上的法线矢量具有向上的分量。
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10.发明申请公开(公告)号：US20070243644A1
公开(公告)日：2007-10-18
申请号：US11730316
申请日：2007-03-30
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2224/48227 , H01L2224/8592 , H01L2924/181 , H01L2924/1815 , H01S5/0202 , H01S5/02252 , H01S5/02288 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/22 , H01S5/2231 , H01S5/34353 , H01L2924/00012 , H01L2924/00014
摘要： Provided are a semiconductor laser device capable of stable operation at the time of high power output without damage to a resonator end surface and a method of manufacturing the same, as well as an optical transmission module and an optical disk apparatus using the semiconductor laser device. A method of manufacturing a semiconductor laser device includes a laser wafer formation step of forming a laser wafer at least having a semiconductor layer to form a resonator end surface, a cleavage step of cleaving the laser wafer in the atmosphere and forming a semiconductor laser element having the resonator end surface, a contact step of brining the resonator end surface in contact with a nitrogen containing gas containing 90-100 volume % nitrogen for one hour or longer, and a reflectance control film formation step of forming a reflectance control film in contact with the resonator end surface.
摘要翻译： 提供一种在高功率输出时能够稳定工作而不破坏谐振器端面的半导体激光器件及其制造方法，以及使用该半导体激光器件的光传输模块和光盘装置。 一种制造半导体激光器件的方法包括：激光晶片形成步骤，形成至少具有半导体层以形成谐振器端面的激光晶片;切割步骤，在大气中切割激光晶片;形成半导体激光元件， 所述谐振器端面，将所述谐振器端面与包含90-100体积％氮气的含氮气体接触1小时以上的接触步骤，以及反射控制膜形成步骤，形成与 谐振器端面。
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