公开(公告)号：US08885368B2

公开(公告)日：2014-11-11

申请号：US13641757

申请日：2011-06-17

申请人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

发明人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

IPC分类号： H02M1/12 ,  H02M7/5387 ,  H02M7/497 ,  H02M1/15 ,  H03K17/16

CPC分类号： H03K17/164 ,  H02M1/15 ,  H02M7/497 ,  H02M7/5387

摘要： A power converter for effectively reducing switching noise is provided. The power converter comprises a capacitor 111; switching devices Q11a and Q11b connected to the capacitor 111 in parallel; and a controller 105 that controls each switching device individually to perform switching operations. Each of the switching devices Q11a and Q11b forms a closed circuit together with the capacitor 111. The controller 105 controls the switching devices Q11a and Q11b to perform switching operations of switching ON or OFF at different timings such that at least two closed circuits including the switching devices Q11a and Q11b mutually cancel ringing voltages occurring therein, each ringing voltage occurring due to the switching operations performed by a corresponding switching device and having a frequency defined by an inductance of a corresponding closed circuit and an output capacity of a switching device included in the corresponding closed circuit.

摘要翻译： 提供了一种有效降低开关噪声的电源转换器。 功率转换器包括电容器111; 并联连接到电容器111的开关器件Q11a和Q11b; 以及控制器105，其分别控制各开关装置进行切换动作。 开关装置Q11a，Q11b与电容器111一起形成闭合电路。控制部105控制切换装置Q11a，Q11b，在不同的定时进行接通或断开的切换动作，使至少包含切换的2个闭合电路 设备Q11a和Q11b相互抵消其中发生的振铃电压，由于由相应的开关装置执行的开关操作而产生的振铃电压，并且具有由相应的闭合电路的电感和包括在其中的开关装置的输出容量定义的频率 相应闭路。

公开(公告)号：US08693226B2

公开(公告)日：2014-04-08

申请号：US13639182

申请日：2011-10-28

申请人： Makoto Kitabatake ,  Shun Kazama

发明人： Makoto Kitabatake ,  Shun Kazama

IPC分类号： H02M3/335

CPC分类号： H02M7/5387 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7806 ,  H01L29/7828 ,  H02M7/003

摘要： An inverter comprising: a circuit including arms connected in parallel, each of the arms including a first switch and a second switch connected in series; and a gate drive circuit configured to control, by pulse-width modulation using synchronous rectification, each of the first switch and the second switch to switch to an on-state or an off-state, wherein each of the first switch and the second switch includes: a channel region that is conductive in both a forward direction and a reverse direction in the on-state, and that is not conductive in the forward direction in the off-state; and a diode region that is combined as one with the channel region, and that is conductive only in the reverse direction, the diode region being unipolar, and the gate drive circuit synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the on-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the off-state, and synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the off-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the on-state.

摘要翻译： 一种逆变器，包括：包括并联连接的臂的电路，每个臂包括串联连接的第一开关和第二开关; 以及栅极驱动电路，被配置为通过使用同步整流的脉冲宽度调制来控制第一开关和第二开关中的每一个以切换到导通状态或截止状态，其中第一开关和第二开关 包括：在导通状态下在正向和反向都是导通的沟道区，并且在截止状态下在正向上不导通; 以及二极管区域，其与沟道区域一体化，并且仅在相反方向上导通，二极管区域是单极的，并且栅极驱动电路同步门驱动电路输出信号的定时， 第一开关切换到导通状态，栅极驱动电路输出用于使第二开关切换到截止状态的信号的定时，并且使门驱动电路输出用于使 第一开关以栅极驱动电路输出用于使第二开关切换到导通状态的信号的定时切换到断开状态。

公开(公告)号：US08680794B2

公开(公告)日：2014-03-25

申请号：US13133775

申请日：2010-11-18

申请人： Shun Kazama ,  Makoto Kitabatake ,  Masaki Tagome

发明人： Shun Kazama ,  Makoto Kitabatake ,  Masaki Tagome

IPC分类号： H02P5/68

CPC分类号： H02M7/53871 ,  B60L1/003 ,  B60L1/02 ,  B60L11/1803 ,  B60L15/08 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2220/16 ,  B60L2220/46 ,  B60L2270/147 ,  H02M2001/008 ,  H02P27/08 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7241 ,  Y10T307/406

摘要： A small-sized load drive system which, even with three three-phase inverters, significantly reduces noise regardless of control duty ratio. The load drive system includes three-phase inverters, and first, second, and third control units. The inverters are connected to loads, respectively. The first control unit generates sawtooth wave voltage and controls the inverter according to the sawtooth wave voltage. The second control unit generates inverse sawtooth wave voltage and controls the inverter according to the inverse sawtooth wave voltage. The third control unit generates triangular wave voltage which has ramps respectively equal to the sawtooth/inverse sawtooth wave voltage and either has a same phase or is out of phase by half a period relative to the sawtooth/inverse sawtooth wave voltage, and also controls the inverter according to the triangular wave voltage.

摘要翻译： 即使使用三个三相逆变器，小型负载驱动系统也可以显着降低噪声，而不管控制占空比如何。 负载驱动系统包括三相逆变器以及第一，第二和第三控制单元。 逆变器分别连接到负载。 第一控制单元产生锯齿波电压，并根据锯齿波电压控制逆变器。 第二控制单元产生反锯齿波电压，并根据逆锯齿波电压控制逆变器。 第三控制单元产生三角波电压，其三角波电压分别等于锯齿波/反锯齿波电压，并且相对于锯齿波/反锯齿波电压具有相同相位或相位相差一半的周期，并且还控制 变频器根据三角波电压。

公开(公告)号：US08410489B2

公开(公告)日：2013-04-02

申请号：US13266271

申请日：2010-04-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H01L29/24

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。

公开(公告)号：US20130039100A1

公开(公告)日：2013-02-14

申请号：US13641757

申请日：2011-06-17

申请人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

发明人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

IPC分类号： H02M1/12

CPC分类号： H03K17/164 ,  H02M1/15 ,  H02M7/497 ,  H02M7/5387

摘要： A power converter for effectively reducing switching noise is provided. The power converter comprises a capacitor 111; switching devices Q11a and Q11b connected to the capacitor 111 in parallel; and a controller 105 that controls each switching device individually to perform switching operations. Each of the switching devices Q11a and Q11b forms a closed circuit together with the capacitor 111. The controller 105 controls the switching devices Q11a and Q11b to perform switching operations of switching ON or OFF at different timings such that at least two closed circuits including the switching devices Q11a and Q11b mutually cancel ringing voltages occurring therein, each ringing voltage occurring due to the switching operations performed by a corresponding switching device and having a frequency defined by an inductance of a corresponding closed circuit and an output capacity of a switching device included in the corresponding closed circuit.

摘要翻译： 提供了一种有效降低开关噪声的电源转换器。 功率转换器包括电容器111; 并联连接到电容器111的开关器件Q11a和Q11b; 以及控制器105，其分别控制各开关装置进行切换动作。 开关装置Q11a，Q11b与电容器111一起形成闭合电路。控制部105控制切换装置Q11a，Q11b，在不同的定时进行接通或断开的切换动作，使至少包含切换的2个闭合电路 设备Q11a和Q11b相互抵消其中发生的振铃电压，由于由相应的开关装置执行的开关操作而产生的振铃电压，并且具有由相应的闭合电路的电感和包括在其中的开关装置的输出容量定义的频率 相应闭路。

公开(公告)号：US20110210713A1

公开(公告)日：2011-09-01

申请号：US12808867

申请日：2008-12-19

申请人： Shun Kazama

发明人： Shun Kazama

IPC分类号： G05F3/02

CPC分类号： H02M7/53875 ,  H02M3/1588 ,  Y02B70/1466

摘要： A power conversion apparatus includes: a MOSFET (12) which includes a channel (12b) and a body diode (12a) connected in parallel, the channel (12b) becoming conductive according to a control signal (C1), so that a flow path of a regenerative current of an inductor (16) is formed, and the body diode (12a) having the regenerative current of the inductor (16) flow in a forward direction; a shunt resistor (2) and a voltage measuring unit (9) which measure an amount of a current (Imeas) flowing into the MOSFET (12); a threshold designating unit (7) which designates a threshold current amount (Ithresh); and a synchronous rectification prohibiting circuit (4) which prohibits supplying the control signal (C1) in the case where the amount of the current (Imeas) measured by the shunt resistor (2) and the voltage measuring unit (9) is greater than the threshold current amount (Ithresh) designated by the threshold designating unit (7).

摘要翻译： 电力转换装置包括：MOSFET（12），其包括并联连接的通道（12b）和体二极管（12a），所述通道（12b）根据控制信号（C1）变为导通，使得流路 形成电感器（16）的再生电流，并且具有电感器（16）的再生电流的体二极管（12a）向前方流动， 分流电阻器（2）和测量流入MOSFET（12）的电流量（Imeas）的电压测量单元（9）; 阈值指定单元（7），其指定阈值电流量（Ithresh）; 以及在由分流电阻器（2）和电压测量单元（9）测量的电流（Imeas）的量大于其的情况下禁止提供控制信号（C1）的同步整流禁止电路（4） 由阈值指定单元（7）指定的阈值电流量（Ithresh）。

公开(公告)号：US08767424B2

公开(公告)日：2014-07-01

申请号：US12808867

申请日：2008-12-19

申请人： Shun Kazama

发明人： Shun Kazama

IPC分类号： H02M7/537

CPC分类号： H02M7/53875 ,  H02M3/1588 ,  Y02B70/1466

摘要： A power conversion apparatus includes a MOSFET having a channel and a body diode connected in parallel. The channel of the MOSFET becomes conductive according to a control signal, so that a flow path of a regenerative current of an inductor is formed, and the body diode of the MOSFET causes the regenerative current of the inductor to flow in a forward direction. The power conversion apparatus also includes a shunt resistor and a voltage measuring unit which measure an amount of a current flowing into the MOSFET. In addition, the power conversion apparatus includes a threshold designating unit which designates a threshold current amount, and a synchronous rectification prohibiting circuit which prohibits supplying the control signal when the amount of the current measured by the shunt resistor and the voltage measuring unit is greater than the threshold current amount designated by the threshold designating unit.

摘要翻译： 电力转换装置包括具有并联连接的通道和体二极管的MOSFET。 MOSFET的通道根据控制信号变为导通，从而形成电感器的再生电流的流路，并且MOSFET的体二极管使得电感器的再生电流沿正向流动。 功率转换装置还包括分流电阻器和测量流入MOSFET的电流量的电压测量单元。 此外，电力转换装置包括指定阈值电流量的阈值指定单元和当由分流电阻器和电压测量单元测量的电流量大于等于或小于等于0的同步整流禁止电路时，该同步整流禁止电路禁止提供控制信号 由阈值指定单元指定的阈值电流量。

公开(公告)号：US20130021831A1

公开(公告)日：2013-01-24

申请号：US13639182

申请日：2011-10-28

申请人： Makoto Kitabatake ,  Shun Kazama

发明人： Makoto Kitabatake ,  Shun Kazama

IPC分类号： H02M7/538

CPC分类号： H02M7/5387 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7806 ,  H01L29/7828 ,  H02M7/003

摘要： An inverter comprising: a circuit including arms connected in parallel, each of the arms including a first switch and a second switch connected in series; and a gate drive circuit configured to control, by pulse-width modulation using synchronous rectification, each of the first switch and the second switch to switch to an on-state or an off-state, wherein each of the first switch and the second switch includes: a channel region that is conductive in both a forward direction and a reverse direction in the on-state, and that is not conductive in the forward direction in the off-state; and a diode region that is combined as one with the channel region, and that is conductive only in the reverse direction, the diode region being unipolar, and the gate drive circuit synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the on-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the off-state, and synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the off-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the on-state.

摘要翻译： 一种逆变器，包括：包括并联连接的臂的电路，每个臂包括串联连接的第一开关和第二开关; 以及栅极驱动电路，被配置为通过使用同步整流的脉冲宽度调制来控制第一开关和第二开关中的每一个以切换到导通状态或截止状态，其中第一开关和第二开关 包括：在导通状态下在正向和反向都是导通的沟道区，并且在截止状态下在正向上不导通; 以及二极管区域，其与沟道区域一体化，并且仅在相反方向上导通，二极管区域是单极的，并且栅极驱动电路同步门驱动电路输出信号的定时， 第一开关切换到导通状态，栅极驱动电路输出用于使第二开关切换到截止状态的信号的定时，并且使门驱动电路输出用于使 第一开关以栅极驱动电路输出用于使第二开关切换到导通状态的信号的定时切换到断开状态。

公开(公告)号：US20120139623A1

公开(公告)日：2012-06-07

申请号：US13389555

申请日：2010-08-09

申请人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

发明人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

IPC分类号： G05F3/02 ,  H01L29/78

CPC分类号： H01L29/7828 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7838 ,  H02M7/5387 ,  Y02B70/1483

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。

公开(公告)号：US20110168697A1

公开(公告)日：2011-07-14

申请号：US13062302

申请日：2010-07-30

申请人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

发明人： Shun Kazama ,  Masaki Tagome ,  Makoto Kitabatake

IPC分类号： H05B6/04 ,  H02M7/44

CPC分类号： H05B6/062 ,  H02M1/14 ,  H05B6/04

摘要： To aim to reduce ripple current flowing through a capacitor in a power converter apparatus including a converter, the capacitor and an inverter. A current sensor 6 is connected between a capacitor 5 and an inverter circuit 7 for detecting current Iinv flowing from the capacitor 5 to the inverter circuit 7. A frequency detecting subunit 11 performs fast Fourier transform on a waveform of the current Iinv to detect a frequency of a frequency component having the largest amplitude. Also, the frequency detecting subunit 12 detects a zero-cross point of the frequency component having the largest amplitude. Then a carrier signal control subunit 13 performs control such that a frequency and a rise time of a PWM carrier signal for driving the converter circuit 4 match the frequency and the zero-cross point that have been detected by the frequency detecting subunit 11 and the phase detecting subunit 12.

摘要翻译： 旨在减少在包括转换器，电容器和逆变器的功率转换器装置中流过电容器的纹波电流。 电流传感器6连接在电容器5和逆变器电路7之间，用于检测从电容器5流向逆变器电路7的电流Iinv。频率检测子单元11对电流Iinv的波形执行快速傅里叶变换，以检测频率 具有最大振幅的频率分量。 此外，频率检测子单元12检测具有最大振幅的频率分量的零交叉点。 然后，载波信号控制子单元13执行控制，使得用于驱动转换器电路4的PWM载波信号的频率和上升时间与由频率检测子单元11检测到的频率和零交叉点相匹配， 检测子单元12。