-
公开(公告)号：US08933463B2
公开(公告)日：2015-01-13
申请号：US13780876
申请日：2013-02-28
申请人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
发明人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
CPC分类号： H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7805 , H01L29/7827 , H01L29/7828 , H03K17/145
摘要： A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译： 包括MISFET的半导体元件通过外延沟道层在相反方向上表现出二极管特性。 半导体元件包括：第一导电类型的碳化硅半导体衬底，第一导电类型的半导体层，第二导电类型的主体区域，第一导电类型的源极区域，与身体区域接触的外延沟道层， 源电极，栅极绝缘膜，栅电极和漏电极。 如果施加到栅电极的电压小于阈值电压，则半导体元件用作二极管，其中电流从源电极通过外延沟道层流到漏电极。 该二极管的导通电压的绝对值小于由体区和第一碳化硅半导体层形成的体二极管的导通电压。
-
2.发明授权公开(公告)号：US08283973B2
公开(公告)日：2012-10-09
申请号：US13389555
申请日：2010-08-09
申请人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
发明人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
IPC分类号： G05F3/02
CPC分类号： H01L29/7828 , H01L29/1608 , H01L29/66068 , H01L29/78 , H01L29/7838 , H02M7/5387 , Y02B70/1483
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。
-
公开(公告)号：US20120057386A1
公开(公告)日：2012-03-08
申请号：US13266271
申请日：2010-04-28
申请人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
发明人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
CPC分类号： H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7805 , H01L29/7827 , H01L29/7828 , H03K17/145
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。
-
4.发明申请公开(公告)号：US20120139623A1
公开(公告)日：2012-06-07
申请号：US13389555
申请日：2010-08-09
申请人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
发明人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
CPC分类号： H01L29/7828 , H01L29/1608 , H01L29/66068 , H01L29/78 , H01L29/7838 , H02M7/5387 , Y02B70/1483
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。
-
公开(公告)号：US08410489B2
公开(公告)日：2013-04-02
申请号：US13266271
申请日：2010-04-28
申请人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
发明人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
IPC分类号： H01L29/24
CPC分类号： H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7805 , H01L29/7827 , H01L29/7828 , H03K17/145
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。
-
公开(公告)号：US09179504B2
公开(公告)日：2015-11-03
申请号：US13062302
申请日：2010-07-30
申请人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
发明人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
摘要： To aim to reduce ripple current flowing through a capacitor in a power converter apparatus including a converter, the capacitor and an inverter. A current sensor 6 is connected between a capacitor 5 and an inverter circuit 7 for detecting current Iinv flowing from the capacitor 5 to the inverter circuit 7. A frequency detecting subunit 11 performs fast Fourier transform on a waveform of the current Iinv to detect a frequency of a frequency component having the largest amplitude. Also, the frequency detecting subunit 12 detects a zero-cross point of the frequency component having the largest amplitude. Then a carrier signal control subunit 13 performs control such that a frequency and a rise time of a PWM carrier signal for driving the converter circuit 4 match the frequency and the zero-cross point that have been detected by the frequency detecting subunit 11 and the phase detecting subunit 12.
摘要翻译： 旨在减少在包括转换器，电容器和逆变器的功率转换器装置中流过电容器的纹波电流。 电流传感器6连接在电容器5和逆变器电路7之间，用于检测从电容器5流向逆变器电路7的电流Iinv。频率检测子单元11对电流Iinv的波形执行快速傅里叶变换，以检测频率 具有最大振幅的频率分量。 此外，频率检测子单元12检测具有最大振幅的频率分量的零交叉点。 然后，载波信号控制子单元13执行控制，使得用于驱动转换器电路4的PWM载波信号的频率和上升时间与由频率检测子单元11检测到的频率和零交叉点相匹配， 检测子单元12。
-
公开(公告)号：US08508180B2
公开(公告)日：2013-08-13
申请号：US13637136
申请日：2012-02-02
申请人： Masaki Tagome , Shun Kazama
发明人： Masaki Tagome , Shun Kazama
IPC分类号： H02P1/46
CPC分类号： H02M7/797 , H02M2001/0074 , H02M2001/327 , H02P25/22 , H02P27/06
摘要： A motor drive apparatus receiving power from a power source and driving a motor with independent polyphase systems of excitation coils, comprises: a control circuit and power converters each corresponding to one system, each including an inverter circuit, an interrupter circuit, and a temperature detector, the inverter circuits being connected in series to the power source and, while not short-circuited, supplying power to the excitation coil, wherein the control circuit detects an operating state of the motor, short-circuits the inverter circuits and interrupts the interrupter circuits for a subset of power converters defined according to the operating state, such that a source voltage is supplied to non-short-circuited inverter circuits, and, when a power converter exceeds a predetermined temperature, the control circuit short-circuits the inverter circuit and interrupts the interrupter circuit thereof, and, in another power converter not exceeding the predetermined temperature, operates the inverter circuit and connects the interrupter circuit.
摘要翻译： 一种电动机驱动装置，其从动力源接收动力并用独立的多相励磁线圈系统驱动电动机，其特征在于，包括：控制电路和功率转换器，分别对应于一个系统，每个系统包括逆变器电路，断续器电路和温度检测器 逆变器电路与电源串联连接，并且在没有短路的情况下向励磁线圈供电，其中控制电路检测到电动机的运行状态，使逆变器电路短路并中断断续电路 对于根据工作状态定义的功率转换器的子集，使得源电压被提供给非短路的逆变器电路，并且当功率转换器超过预定温度时，控制电路使逆变器电路短路， 中断其断续电路，并且在不超过预定温度的另一功率转换器中操作 连接逆变电路并连接断路器电路。
-
公开(公告)号：US08390165B2
公开(公告)日：2013-03-05
申请号：US12995143
申请日：2009-05-28
CPC分类号： H02K21/222 , H02K3/28 , H02K29/03
摘要： Provided is a synchronous motor including a rotor having magnetic poles distributed circumferentially along a rotation direction of the rotor at equal intervals, and a stator having stator teeth arranged circumferentially along the rotation direction of the rotor, each tooth wound with a stator coil by concentrated winding. Every M consecutive stator teeth belong to one of stator teeth groups arranged at equal intervals. The M consecutive stator teeth in each stator teeth group are arranged at intervals different from the intervals of the magnetic poles of the rotor. The stator coils wound around the M consecutive stator teeth are connected to separate terminals. A motor driver supplies currents of different phases to the stator coils via the respective terminals.
摘要翻译： 本发明提供一种同步电动机，其具有转子，该转子具有沿着转子的旋转方向等间隔地周向分布的磁极，定子具有沿着转子的旋转方向周向配置的定子齿，每个齿通过集中绕组卷绕定子线圈 。 每个M个连续的定子齿属于以等间隔布置的定子齿组之一。 每个定子齿组中的M个连续的定子齿以与转子的磁极间隔不同的间隔排列。 缠绕在M个连续的定子齿上的定子线圈连接到分离的端子。 电机驱动器通过各个端子向定子线圈提供不同相的电流。
-
公开(公告)号：US08363440B2
公开(公告)日：2013-01-29
申请号：US12864856
申请日：2009-12-16
申请人： Masaki Tagome , Makoto Kitabatake , Shun Kazama
发明人： Masaki Tagome , Makoto Kitabatake , Shun Kazama
CPC分类号： H02M1/28
摘要： In a power conversion circuit operating with high frequency, an off-voltage control circuit 101u of a lower-arm gate drive circuit 24u controls the output voltage of a gate drive power supply 103u to change the output voltage to a voltage lower than a predetermined off voltage during a time period from termination of turn-off operation of a lower arm 22u until start of turn-on operation of an upper arm 21u, and thereafter return the output voltage to the predetermined off voltage immediately after termination of the turn-on operation of the upper arm 21u. With this control, short-circuiting through the upper and lower arms occurring due to a high voltage change dv/dt can be avoided, and the life of a switching element constituting the power conversion circuit improves, increasing the reliability of the power conversion circuit.
摘要翻译： 在以高频工作的电力转换电路中，下臂栅极驱动电路24u的截止电压控制电路101u控制栅极驱动电源103u的输出电压，将输出电压变更为低于预定的电压 在从下臂22u的关断动作结束到上臂21u的接通动作开始的期间的电压，然后在接通动作结束后立即将输出电压返回到规定的关闭电压 的上臂21u。 通过该控制，可以避免由于高电压变化dv / dt而产生的上臂和下臂的短路，并且构成功率转换电路的开关元件的寿命提高，从而提高了电力转换电路的可靠性。
-
公开(公告)号：US20110260656A1
公开(公告)日：2011-10-27
申请号：US13133775
申请日：2010-11-18
申请人： Shun Kazama , Makoto Kitabatake , Masaki Tagome
发明人： Shun Kazama , Makoto Kitabatake , Masaki Tagome
CPC分类号： H02M7/53871 , B60L1/003 , B60L1/02 , B60L11/1803 , B60L15/08 , B60L2210/40 , B60L2220/14 , B60L2220/16 , B60L2220/46 , B60L2270/147 , H02M2001/008 , H02P27/08 , Y02T10/644 , Y02T10/645 , Y02T10/7005 , Y02T10/7241 , Y10T307/406
摘要： Provided is a small-sized load drive system which, even with three three-phase inverters, significantly reduces noise regardless of control duty ratio. The load drive system includes three-phase inverters 301 to 303, and first, second, and third control units 401 to 403. The inverters 301 to 303 are connected to loads 211 to 213, respectively. The first control unit 401 generates sawtooth wave voltage and controls the inverter 301 according to the sawtooth wave voltage. The second control unit 402 generates inverse sawtooth wave voltage and controls the inverter 302 according to the inverse sawtooth wave voltage. The third control unit 403 generates triangular wave voltage which has ramps respectively equal to the sawtooth/inverse sawtooth wave voltage and either has a same phase or is out of phase by half a period relative to the sawtooth/inverse sawtooth wave voltage, and also controls the inverter 303 according to the triangular wave voltage.
摘要翻译： 提供了一种小型负载驱动系统，即使使用三个三相逆变器，无论控制占空比如何，都能显着降低噪声。 负载驱动系统包括三相逆变器301至303以及第一，第二和第三控制单元401至403。反相器301至303分别连接到负载211至213。 第一控制单元401产生锯齿波电压，并根据锯齿波电压控制反相器301。 第二控制单元402产生反锯齿波电压，并根据反锯齿波电压控制逆变器302。 第三控制单元403产生三角波电压，该三角波电压具有分别等于锯齿波/反锯齿波电压的斜坡，并且相对于锯齿波/反锯齿波电压具有相同相位或相位相差一半的周期，并且还控制 逆变器303根据三角波电压。
-
-
-
-
-
-
-
-
-
搜索结果
26 条记录 (耗时 0.034 秒)
