公开(公告)号：US20240300625A1

公开(公告)日：2024-09-12

申请号：US18686303

申请日：2021-05-14

Applicant: Sunit TYAGI

Inventor： Sunit TYAGI

IPC: B63B35/44 ,  B63B1/12 ,  B63B39/00 ,  B63B79/10 ,  B63B79/20 ,  B63B79/40 ,  F03D9/00 ,  F03D9/11 ,  F03D13/25

CPC classification number: B63B35/44 ,  B63B1/125 ,  B63B39/00 ,  B63B79/10 ,  B63B79/20 ,  B63B79/40 ,  F03D9/007 ,  F03D9/11 ,  F03D13/256 ,  B63B2035/4453 ,  B63B2035/446 ,  B63B2035/4466 ,  B63B2241/06 ,  B63B2241/08 ,  F05B2240/93 ,  F05B2240/95

Abstract: Renewable Energy (RE) sources are already one of the cheapest sources of energy available today but are variable and infirm, and the open ocean offers many opportunities to generate energy by using various disparate sources and methods on a floating station. These energy stations converting renewable energy including solar, ocean currents, wind, waves and batteries and hydrogen to store energy and provide sufficient stable power and energy as required and available most of the hours. The invention claimed here is a system to capture energy from a combination of wind, solar and ocean currents, along with batteries for storage and later use and hydrogen creation, storage and use for generation. In addition, apparatus is described that provide mechanical stability and resilience in deep open seas and reliably survive storms and hurricanes. Also described is a method for overcoming intermittency of ensuring continuous and stable energy export from the station, and finally methods to continually operate RE station in the open seas even during storms and hurricanes and survive the high winds and waves.

公开(公告)号：US07888710B2

公开(公告)日：2011-02-15

申请号：US11874129

申请日：2007-10-17

Applicant: Mark Armstrong ,  Gerhard Schrom ,  Sunit Tyagi ,  Paul A. Packan ,  Kelin J. Kuhn ,  Scott Thompson

Inventor： Mark Armstrong ,  Gerhard Schrom ,  Sunit Tyagi ,  Paul A. Packan ,  Kelin J. Kuhn ,  Scott Thompson

IPC: H01L27/148

CPC classification number: H01L27/1446 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/7843 ,  H01L29/7846

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract translation: 互补金属氧化物半导体晶体管形成在硅衬底上。 基板具有{100}晶体取向。 晶体管形成在衬底上，使得电流在晶体管的沟道中流动平行于<100>方向。 此外，纵向拉伸应力施加到通道。

公开(公告)号：US07560780B2

公开(公告)日：2009-07-14

申请号：US11298095

申请日：2005-12-08

Applicant: Giuseppe Curello ,  Ian R. Post ,  Chia-Hong Jan ,  Sunit Tyagi ,  Mark Bohr

Inventor： Giuseppe Curello ,  Ian R. Post ,  Chia-Hong Jan ,  Sunit Tyagi ,  Mark Bohr

IPC: H01L29/76 ,  H01L29/94

CPC classification number: H01L21/823481 ,  H01L21/26506 ,  H01L21/823418 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833 ,  H01L29/7834

Abstract: A semiconductor device and method for its fabrication are described. An active region spacer may be formed on a top surface of an isolation region and adjacent to a sidewall of an active region. In one embodiment, the active region spacer may suppress the formation of metal pipes in the active region.

Abstract translation: 对半导体装置及其制造方法进行说明。 有源区隔离物可以形成在隔离区的顶表面上并且邻近有源区的侧壁。 在一个实施例中，有源区间隔物可以抑制活性区域中的金属管的形成。

公开(公告)号：US07473591B2

公开(公告)日：2009-01-06

申请号：US11292428

申请日：2005-12-01

Applicant: Stephen M. Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

Inventor： Stephen M. Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

IPC: H01L21/00

CPC classification number: H01L29/66636 ,  H01L29/1054 ,  H01L29/7842

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract translation: 用于在器件的沟道区域中形成应变硅层的各种方法以及根据所公开的方法构造的器件。 在一个实施例中，形成应变诱导层，在应变诱导层上形成松弛层，去除应变诱导层的一部分，这使得应变诱导层松弛并使应变放松层。

公开(公告)号：US06249025B1

公开(公告)日：2001-06-19

申请号：US08998257

申请日：1997-12-29

Applicant: Sunit Tyagi

Inventor： Sunit Tyagi

IPC: H01L2976

CPC classification number: H01L21/76237 ,  H01L21/823892

Abstract: The present invention is a semiconductor device having and a method for forming wells by growing an epitaxial silicon layer wherein the epitaxial silicon layer has at least three silicon sublayers. The first sublayer is highly doped, the second sublayer is less doped, and the third sublayer is also highly doped. The use of the epitaxially grown wells allows for the placement of high dopant concentrations in regions of the well where electrical isolation is an issue and the placement of lower doped concentrations in regions of the well where electrical isolation is not as great an issue in order to help reduce the problem of parasitic capacitance.

公开(公告)号：US5844300A

公开(公告)日：1998-12-01

申请号：US716843

申请日：1996-09-19

Applicant: Mohsen Alavi ,  Payman Aminzadeh ,  Robert A. Gasser ,  Sunit Tyagi ,  Gilroy J. Vandentop

Inventor： Mohsen Alavi ,  Payman Aminzadeh ,  Robert A. Gasser ,  Sunit Tyagi ,  Gilroy J. Vandentop

IPC: H01L27/115 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC classification number: H01L27/115

Abstract: A monitoring device to monitor process induced charge employing a single layer of polysilicon forming a floating gate. The device comprises two capacitors, one for charging and the other for discharging a floating gate of an n-channel transistor. Embodiments which permit the monitoring of positive charge, negative charge and both positive and negative charge are described. The device is reusable and lends itself to in-line monitoring as opposed to some prior art devices used for end-of-line monitoring.

Abstract translation: 一种使用形成浮栅的单层多晶硅监测过程感应电荷的监测装置。 该器件包括两个电容器，一个用于充电，另一个用于放电n沟道晶体管的浮置栅极。 描述允许监测正电荷，负电荷以及正电荷和负电荷两者的实施例。 与用于线路末端监测的一些现有技术设备相反，该设备可重复使用并且适合于在线监测。

公开(公告)号：US08552587B2

公开(公告)日：2013-10-08

申请号：US12840130

申请日：2010-07-20

Applicant: Sunit Tyagi ,  Hemanshu Bhatt

Inventor： Sunit Tyagi ,  Hemanshu Bhatt

IPC: H02J1/10

CPC classification number: H02M7/537 ,  H02J3/383 ,  H02M7/493 ,  H02M2007/4815 ,  Y02B70/1441 ,  Y02E10/563 ,  Y10T307/50 ,  Y10T307/658 ,  Y10T307/713

Abstract: Embodiments related to the conversion of DC power to AC power are disclosed. For example, one disclosed embodiment provides a power conversion system, comprising a plurality of direct current (DC) power sources, a plurality of power output circuits connected to one another in a parallel arrangement, each power output circuit being connected to a corresponding DC power source to receive power from the corresponding DC power source and to selectively discharge power received from the corresponding DC power source, a power combiner configured to combine power received from the plurality of power output circuits to form a combined power signal, an output stage configured to convert the combined power signal into an AC signal or a DC signal, and a controller in electrical communication with each power outlet circuit and the power combiner to control the output of power by the power converter.

Abstract translation: 公开了将直流电转换为交流电力的实施例。 例如，一个公开的实施例提供了一种功率转换系统，其包括多个直流（DC）电源，多个以并联装置彼此连接的功率输出电路，每个功率输出电路连接到相应的直流电力 源极，用于从相应的直流电源接收电力并选择性地放电从相应的直流电源接收的功率;功率组合器，被配置为组合从多个功率输出电路接收的功率以形成组合的功率信号;输出级，被配置为 将组合的功率信号转换为AC信号或DC信号，以及与每个电源插座电路和功率组合器电连接的控制器，以通过功率转换器来控制功率的输出。

公开(公告)号：US20070132034A1

公开(公告)日：2007-06-14

申请号：US11304016

申请日：2005-12-14

Applicant: Giuseppe Curello ,  Mark Bohr ,  Hemant Deshpande ,  Sunit Tyagi

Inventor： Giuseppe Curello ,  Mark Bohr ,  Hemant Deshpande ,  Sunit Tyagi

IPC: H01L29/76

CPC classification number: H01L21/823481 ,  H01L21/76232 ,  H01L29/6659 ,  H01L29/7833

Abstract: A semiconductor device and method for its fabrication are described. An isolation body may be formed prior to formation of an active region. In one embodiment, the isolation body is void-free.

Abstract translation: 对半导体装置及其制造方法进行说明。 可以在形成活性区域之前形成隔离体。 在一个实施例中，隔离体是无空隙的。

公开(公告)号：US20070022360A1

公开(公告)日：2007-01-25

申请号：US11174003

申请日：2005-06-30

Applicant: Nivruti Rai ,  Anshumali Kumar ,  Edward Burton ,  Sunit Tyagi ,  Jeffrey Miller

Inventor： Nivruti Rai ,  Anshumali Kumar ,  Edward Burton ,  Sunit Tyagi ,  Jeffrey Miller

IPC: G11C29/00

CPC classification number: G11C11/417

Abstract: A method comprising running an error correction code on data and storing the data and the result of the error correction code in memory, running an error correction code on the data when it is read from the memory, comparing the results of the error correction codes on the data from before and after the memory, correcting errors when the comparator determines a difference in the results of the error correction codes and lowering the operating voltage of the memory array while using the error correction.

Abstract translation: 一种方法，包括在数据上运行纠错码并将数据和纠错码的结果存储在存储器中，当从存储器读取数据时对数据进行纠错码，将纠错码的结果与 来自存储器之前和之后的数据，当比较器确定误差校正码的结果的差异并且在使用纠错时降低存储器阵列的工作电压时校正错误。

公开(公告)号：US20060084216A1

公开(公告)日：2006-04-20

申请号：US11292428

申请日：2005-12-01

Applicant: Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

Inventor： Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

IPC: H01L21/8234

CPC classification number: H01L29/66636 ,  H01L29/1054 ,  H01L29/7842

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.