摘要:
A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要:
β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.
摘要:
Provided are an α-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The α-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12-(m+n)(Al)m+n(O)n(N)16-n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an α-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the α-SiAlON is 5 μm or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the α-SiAlON is preferably 0.56 or more. A light-emitting device 10 includes a light-emitting light source 12 and a wavelength conversion member 15, wherein the wavelength conversion member 15 includes a α-SiAlON 18 for absorbing near-ultraviolet to blue light generated by the light-emitting light source 12 to generate yellow to orange light.
摘要:
Provided are an α-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The α-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12−(m+n)(Al)m+n(O)n(N)16−n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an α-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the α-SiAlON is 5 μm or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the α-SiAlON is preferably 0.56 or more. A light-emitting device 10 includes a light-emitting light source 12 and a wavelength conversion member 15, wherein the wavelength conversion member 15 includes a α-SiAlON 18 for absorbing near-ultraviolet to blue light generated by the light-emitting light source 12 to generate yellow to orange light.
摘要:
Provided is a production method of a β-sialon phosphor that europium ions are solid-solved in β-sialon, including a mixing process for mixing raw materials of the β-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the β-sialon phosphor; a HIP treatment process in which the β-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the β-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the β-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a β-sialon phosphor, a β-sialon phosphor excellent in luminescence intensity is obtained.
摘要:
A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要:
A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要:
A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.
摘要:
A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.
摘要:
β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.
摘要翻译:由通式Si 6-z Al z O z N 8-z表示的-SiAlON,其中Eu被溶解,其通过电子自旋共振法获得的在25℃下对应于吸收g = 2.00±0.02的自旋密度等于或低于6.0× 1016旋/克。 一种制造-SiAlON的方法包括:混合-SiAlON材料的混合步骤; 焙烧步骤,烘焙已经经历混合步骤的&bgr; -SiAlON; 将经过混合步骤的材料的环境温度从1500℃提高至烘烤步骤的烘烤温度的加热步骤,其速度等于或低于2℃/分钟; 退火步骤,退火已经经过烘烤步骤的SiAlON; 以及酸处理已经经过退火步骤的SiAlON的酸处理步骤。 本发明的目的是提供能够实现高发光效率的SiAlON,制造-SiAlON的方法和使用该-SiAlON的发光器件。