B-SIALON AND METHOD OF MANUFACTURING THEREOF, AND LIGHT-EMITTING DEVICE
    2.
    发明申请
    B-SIALON AND METHOD OF MANUFACTURING THEREOF, AND LIGHT-EMITTING DEVICE 有权
    B-SIALON及其制造方法和发光装置

    公开(公告)号:US20130093314A1

    公开(公告)日:2013-04-18

    申请号:US13704772

    申请日:2011-07-28

    IPC分类号: C09K11/77 H05B33/12

    摘要: β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.

    摘要翻译: 由其中溶解有Eu的通式为Si6-zAlzOzN8-z的通式Si-SiAlON表示,其通过电子自旋共振法获得的在25℃下对应于吸收g = 2.00±0.02的自旋密度等于或低于6.0×1016 旋转/ g。 制备β-SiAlON的方法包括:混合β-SiAlON材料的混合步​​骤; 焙烧步骤,烘焙经过混合步骤的β-SiAlON; 将经过混合步骤的材料的环境温度从1500℃提高至烘烤步骤的烘烤温度的加热步骤以等于或低于2℃/分的速率; 对经历了烘烤步骤的β-SiAlON退火的退火步骤; 以及酸处理已经经历退火步骤的β-SiAlON的酸处理步骤。 本发明的目的是提供能够实现高发光效率的β-SiAlON,制造β-SiAlON的方法和使用β-S​​iAlON的发光器件。

    α-SiAlON, light-emitting device and use thereof
    3.
    发明授权
    α-SiAlON, light-emitting device and use thereof 有权
    α-SiAlON,发光装置及其用途

    公开(公告)号:US09024519B2

    公开(公告)日:2015-05-05

    申请号:US13981286

    申请日:2011-11-30

    摘要: Provided are an α-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The α-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12-(m+n)(Al)m+n(O)n(N)16-n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an α-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the α-SiAlON is 5 μm or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the α-SiAlON is preferably 0.56 or more. A light-emitting device 10 includes a light-emitting light source 12 and a wavelength conversion member 15, wherein the wavelength conversion member 15 includes a α-SiAlON 18 for absorbing near-ultraviolet to blue light generated by the light-emitting light source 12 to generate yellow to orange light.

    摘要翻译: 提供了由Eu激活的α-SiAlON,其可以在诸如白色LED的发光装置以及发光装置中实现更高的亮度。 α-SiAlON由以下通式表示:(M)x(Eu)y(Si)12-(m + n)(Al)m + n(O)n(N)16-n 或更多含有选自Li,Mg,Ca,Y和镧系元素(La和Ce除外)中的至少Ca的元素),并且由具有固溶体形式的Eu的α-SiAlON构成 。 α-SiAlON的一次粒子的50%平均面积直径为5μm以上,一次粒子的50%平均面积直径与α-SiAlON二次粒子的平均面积直径的比值优选为 0.56以上。 发光装置10包括发光光源12和波长转换部件15,其中波长转换部件15包括用于吸收由发光光源12产生的近紫外至蓝光的α-SiAlON 18 产生黄色到橙色的光。

    alpha-SIALON, LIGHT-EMITTING DEVICE AND USE THEREOF
    4.
    发明申请
    alpha-SIALON, LIGHT-EMITTING DEVICE AND USE THEREOF 有权
    阿赛隆,发光装置及其用途

    公开(公告)号:US20130293093A1

    公开(公告)日:2013-11-07

    申请号:US13981286

    申请日:2011-11-30

    IPC分类号: H05B33/14 H05B33/12

    摘要: Provided are an α-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The α-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12−(m+n)(Al)m+n(O)n(N)16−n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an α-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the α-SiAlON is 5 μm or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the α-SiAlON is preferably 0.56 or more. A light-emitting device 10 includes a light-emitting light source 12 and a wavelength conversion member 15, wherein the wavelength conversion member 15 includes a α-SiAlON 18 for absorbing near-ultraviolet to blue light generated by the light-emitting light source 12 to generate yellow to orange light.

    摘要翻译: 提供了由Eu激活的α-SiAlON,其可以在诸如白色LED的发光装置以及发光装置中实现更高的亮度。 α-SiAlON由以下通式表示:(M)x(Eu)y(Si)12-(m + n)(Al)m + n(O)n(N)16-n(其中M表示一 或更多的元素,其至少包括选自Li,Mg,Ca,Y和镧系元素(La和Ce除外)的Ca)),并且由具有固溶体形式的Eu的α-SiAlON构成 。 α-SiAlON的一次颗粒的平均面积直径的50%为5umum以上,一次粒子的50%平均面积直径与α-SiAlON二次粒子的平均面积直径的比值优选为 0.56以上。 发光装置10包括发光光源12和波长转换构件15,其中波长转换构件15包括用于吸收由发光光源12产生的近紫外至蓝光的α-SiAlON 18 产生黄色到橙色的光。

    Phosphor and light-emitting device
    8.
    发明授权
    Phosphor and light-emitting device 有权
    荧光体和发光装置

    公开(公告)号:US09401459B2

    公开(公告)日:2016-07-26

    申请号:US14377487

    申请日:2012-08-09

    摘要: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.

    摘要翻译: 提供具有高温特性和长期可靠性的高亮度荧光体和使用该荧光体的白色发光装置。 荧光体含有峰值波长为至少525nm但不高于535nm,荧光强度为至少250%但不高于270%的硅酸盐荧光体(A) 具有至少540nm但不高于545nm的峰值波长和至少260%但不高于280%的荧光强度的氧氮化物荧光体(B); 和具有至少615nm但不高于625nm的峰值波长的氮化物荧光体(C),其中硅酸盐荧光体(A)的量为至少20质量%但不高于35质量%, 氮氧化物荧光体(B)的含量为50质量%以上且70质量%以下,氮化物荧光体(C)的含量为10质量%以上且20质量%以下。

    Phosphor for light-emitting device
    9.
    发明授权
    Phosphor for light-emitting device 有权
    荧光粉用于发光装置

    公开(公告)号:US09309459B2

    公开(公告)日:2016-04-12

    申请号:US14377071

    申请日:2012-08-09

    摘要: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.

    摘要翻译: 提供具有高温特性和长期可靠性的高亮度荧光体和使用该荧光体的白色发光装置。 荧光体含有峰值波长为至少525nm但不高于535nm,荧光强度为至少250%但不高于270%的硅酸盐荧光体(A) 具有至少540nm但不高于545nm的峰值波长和至少260%但不高于280%的荧光强度的氧氮化物荧光体(B); 和具有至少645nm但不高于655nm的峰值波长的氧氮化物荧光体(C),其中硅酸盐荧光体(A)的量为至少20质量%但不高于35质量% 氧氮化物荧光体(B)为至少50质量%以上且70质量%以下,氧氮化物荧光体(C)的含量为10质量%以上且20质量%以下。

    β-sialon and method of manufacturing thereof, and light-emitting device
    10.
    发明授权
    β-sialon and method of manufacturing thereof, and light-emitting device 有权
    和其制造方法以及发光装置

    公开(公告)号:US09163175B2

    公开(公告)日:2015-10-20

    申请号:US13704772

    申请日:2011-07-28

    摘要: β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.

    摘要翻译: 由通式Si 6-z Al z O z N 8-z表示的-SiAlON,其中Eu被溶解,其通过电子自旋共振法获得的在25℃下对应于吸收g = 2.00±0.02的自旋密度等于或低于6.0× 1016旋/克。 一种制造-SiAlON的方法包括:混合-SiAlON材料的混合步​​骤; 焙烧步骤,烘焙已经经历混合步骤的&bgr; -SiAlON; 将经过混合步骤的材料的环境温度从1500℃提高至烘烤步骤的烘烤温度的加热步骤,其速度等于或低于2℃/分钟; 退火步骤,退火已经经过烘烤步骤的SiAlON; 以及酸处理已经经过退火步骤的SiAlON的酸处理步骤。 本发明的目的是提供能够实现高发光效率的SiAlON,制造-SiAlON的方法和使用该-SiAlON的发光器件。