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    Method of manufacturing solid-state image sensor
    3.
    发明授权
    Method of manufacturing solid-state image sensor 失效
    制造固态图像传感器的方法

    公开(公告)号：US4772565A

    公开(公告)日：1988-09-20

    申请号：US51590

    申请日：1987-05-20

    申请人： Takaaki Kamimura ,  Hidetoshi Nozaki ,  Masahiko Hirose

    发明人： Takaaki Kamimura ,  Hidetoshi Nozaki ,  Masahiko Hirose

    IPC分类号： H01L21/205 ,  H01L27/146 ,  H01L31/20 ,  H01L27/14 ,  H01L31/02

    CPC分类号： H01L31/202 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/14665 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.

    摘要翻译： 一种制造固态图像传感器的方法包括以下步骤：制备其中形成信号电荷存储二极管和信号电荷读出部分的固态图像传感器基板，并形成具有光电转换部分的光电导膜， 衬底上的非晶硅膜。 通过在衬底上引入含有硅化合物的源气体并在源气体上照射紫外光来分解原料气而形成非晶硅膜，同时将固态图像传感器基板保持在100℃至350℃的温度 。

    Image sensor with backside passivation and metal layer
    5.
    发明授权
    Image sensor with backside passivation and metal layer 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US08232133B2

    公开(公告)日：2012-07-31

    申请号：US13191042

    申请日：2011-07-26

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

    摘要翻译： 图像传感器包括对不同波长的光进行滤光的半导体层。 例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的正面附近。 在半导体层的背面附近的光电二极管附近形成掺杂剂层。 主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER
    7.
    发明申请
    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US20110278436A1

    公开(公告)日：2011-11-17

    申请号：US13191042

    申请日：2011-07-26

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146 ,  B82Y20/00

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

    摘要翻译： 图像传感器包括对不同波长的光进行滤光的半导体层。 例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的正面附近。 在半导体层的背面附近的光电二极管附近形成掺杂剂层。 主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

    CMOS PIXEL WITH DUAL-ELEMENT TRANSFER GATE
    8.
    发明申请
    CMOS PIXEL WITH DUAL-ELEMENT TRANSFER GATE 审中-公开
    具有双元件转移门的CMOS像素

    公开(公告)号：US20100314667A1

    公开(公告)日：2010-12-16

    申请号：US12781638

    申请日：2010-05-17

    申请人： Hidetoshi Nozaki ,  Tiejun Dai

    发明人： Hidetoshi Nozaki ,  Tiejun Dai

    IPC分类号： H01L31/112 ,  H01L31/18

    CPC分类号： H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

    摘要： Embodiments of a pixel that includes a photosensitive region, a floating diffusion region, and a transistor transfer gate disposed between the photosensitive region and the floating diffusion region. The transfer gate includes first and second transfer gate elements, the first transfer gate element having a different doping than the second transfer gate element. By controlling the doping of the first and second transfer gate elements a transfer gate can be provided with a greater threshold voltage near the photosensitive region and a lesser threshold voltage near the floating diffusion region. Other embodiments, including process embodiments, are disclosed and claimed.

    摘要翻译： 包括光敏区域，浮动扩散区域和设置在感光区域和浮动扩散区域之间的晶体管传输栅极的像素的实施例。 传输门包括第一和第二传输门元件，第一传输门元件具有与第二传输门元件不同的掺杂。 通过控制第一和第二传输栅极元件的掺杂，传输栅极可以在光敏区域附近提供更大的阈值电压，并且在浮动扩散区域附近提供较小的阈值电压。 包括流程实施例的其它实施例被公开和要求保护。

    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER
    9.
    发明申请
    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US20090294811A1

    公开(公告)日：2009-12-03

    申请号：US12129599

    申请日：2008-05-29

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L31/112

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer. A P+ layer is formed between the N− region of the photodiode and a back surface of the semiconductor layer. A mirror that primarily reflects photons of red and/or infra-red wavelengths is formed on the back surface of the semiconductor layer.

    摘要翻译： 图像传感器包括低通滤波不同波长的光的半导体层。 例如，半导体层成比例地吸收较短波长的光子并且成比例地传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的前表面上，其中光电二极管是形成在半导体层的P型区域内的N-区域。 在光电二极管的N区和半导体层的背面之间形成P +层。 在半导体层的后表面上形成主要反射红色和/或红外波长的光子的反射镜。

    IMAGE SENSOR REFLECTOR
    10.
    发明申请
    IMAGE SENSOR REFLECTOR 有权
    图像传感器反射器

    公开(公告)号：US20090194671A1

    公开(公告)日：2009-08-06

    申请号：US12023797

    申请日：2008-01-31

    申请人： Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H01L31/0232 ,  H01L21/02

    CPC分类号： H01L27/14625 ,  H01L27/14685

    摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region.

    摘要翻译： 使用基板形成像素阵列，其中每个像素具有用于接收入射光的入射侧的基板，形成在基板中的感光区域和具有复杂形状表面的反射器。 反射器形成在与入射侧相对的基板的一部分中，使得入射在反射器的复合形状表面上的光被反射到感光区域。