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    SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的工艺

    公开(公告)号：US20130337608A1

    公开(公告)日：2013-12-19

    申请号：US14003404

    申请日：2012-03-09

    申请人： Takahiro Kotani ,  Masakatsu Maeda

    发明人： Takahiro Kotani ,  Masakatsu Maeda

    IPC分类号： H01L21/56

    CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/29 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/96 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00

    摘要： According to the present invention, a structure of a semiconductor device in which adhesive deposits are reduced and yield is excellent; and a process for manufacturing the same can be provided. A process for manufacturing a semiconductor device according to the present invention includes: a step of arranging plural semiconductor elements (106) on a main surface of a thermal release adhesive layer (mount film); a step of forming an encapsulant layer (108), which encapsulates the plural semiconductor elements (106) on the main surface of the mount film, using a semiconductor-encapsulating resin composition; and a step of peeling off the mount film to expose a lower surface (30) of the encapsulant layer (108) and lower surfaces (20) of the semiconductor elements (106). A contact angle of the lower surface (30) of the encapsulant layer (108) is less than or equal to 70° when measured using formamide after the step of peeling off the mount film.

    摘要翻译： 根据本发明，其中粘合剂沉积物减少并且产率优异的半导体器件的结构; 并且可以提供其制造方法。 根据本发明的半导体器件的制造方法包括：将多个半导体元件（106）布置在热剥离粘合剂层（安装膜）的主表面上的步骤; 使用半导体封装树脂组合物形成将所述多个半导体元件（106）封装在所述安装膜的主表面上的密封剂层（108）的工序; 以及剥离所述安装膜以暴露所述密封剂层（108）的下表面（30）和所述半导体元件（106）的下表面（20）的步骤。 在剥离安装膜的步骤之后，使用甲酰胺测量时，密封剂层（108）的下表面（30）的接触角小于或等于70°。