公开(公告)号：US08951860B2

公开(公告)日：2015-02-10

申请号：US13612630

申请日：2012-09-12

申请人： Yasushi Ishii ,  Hiraku Chakihara ,  Takahiro Maruyama ,  Akihiro Nakae

发明人： Yasushi Ishii ,  Hiraku Chakihara ,  Takahiro Maruyama ,  Akihiro Nakae

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H01L27/115 ,  H01L49/02

CPC分类号： H01L21/28282 ,  H01L27/11573 ,  H01L28/60 ,  H01L29/42344 ,  H01L29/66833 ,  H01L29/792 ,  H01L2223/54426 ,  H01L2223/5446

摘要： The present invention improves the production yield of a semiconductor device having nonvolatile memory cells of a split gate structure. The level difference of a lower layer resist film with which an end of a memory mat is covered is gentled, the uniformity of the thickness of a resist intermediate layer formed over the lower layer resist film is improved, and local thickness reduction or disappearance is prevented by, after forming a silicon oxide film and a silicon nitride film over each of selective gate electrodes formed in a memory cell region of a semiconductor substrate, removing the silicon oxide film and the silicon nitride film over the selective gate electrode located on the outermost side (a dummy cell region) of the memory mat in the gate length direction.

摘要翻译： 本发明提高了具有分裂栅极结构的非易失性存储单元的半导体器件的生产成本。 存储垫的端部被覆盖的下层抗蚀剂膜的电平差为绅士，改善了形成在下层抗蚀剂膜上的抗蚀剂中间层的厚度的均匀性，并且防止了局部厚度减小或消失 通过在形成在半导体衬底的存储单元区域中的每个选择栅极上形成氧化硅膜和氮化硅膜之后，在位于最外侧的选择栅电极上去除氧化硅膜和氮化硅膜 （虚拟单元区域）。

公开(公告)号：US08697446B2

公开(公告)日：2014-04-15

申请号：US13619193

申请日：2012-09-14

申请人： Toru Futami ,  Takahiro Maruyama ,  Atsushi Morimoto

发明人： Toru Futami ,  Takahiro Maruyama ,  Atsushi Morimoto

IPC分类号： C12N15/02 ,  C12N13/00

CPC分类号： C12M35/02 ,  C12M23/34

摘要： The present invention relates to a cell fusion chamber in which two types of cells having different diameters are fused, the cell fusion chamber including: a cell fusion region in which cell fusion is carried out; a pair of electrodes formed by a conductor and disposed opposite to each other in the cell fusion region; and a partition wall having at least one fine pore; near the fine pore, a cell fusion device including a cell fusion container containing a cell fusion region; a pair of electrodes; a spacer; and an insulator disposed between the spacer and one of the electrodes and having at least one fine pore; and an electronic power supply which applies an alternating voltage and a voltage pulsed direct current to the electrodes, and a cell fusion method using the same.

摘要翻译： 本发明涉及一种细胞融合室，其中具有不同直径的两种细胞融合，所述细胞融合室包括：进行细胞融合的细胞融合区域; 由导体形成的一对电极，在电池熔融区域中相对设置; 和具有至少一个细孔的分隔壁; 靠近细孔的细胞融合装置，包括含有细胞融合区域的细胞融合容器; 一对电极; 间隔物 以及设置在所述间隔件和所述电极中的一个之间并且具有至少一个细孔的绝缘体; 以及向电极施加交流电压和电压脉冲直流电的电子电源，以及使用该电子电源的电池组合方法。

公开(公告)号：US08334054B2

公开(公告)日：2012-12-18

申请号：US12918528

申请日：2009-02-20

申请人： Akihiro Endo ,  Masaya Asaine ,  Takahiro Maruyama

发明人： Akihiro Endo ,  Masaya Asaine ,  Takahiro Maruyama

IPC分类号： B32B9/04

CPC分类号： C09D183/04 ,  Y10T428/31663

摘要： A heat conductive cured product which can be handled even in a single layer or thin film form, can be readily attached to a heat-generating component or heat-dissipating member, and exhibits an appropriate tack and heat conductivity in a thin film form is provided as well as a method for preparing the same. A heat conductive cured product is prepared by applying a heat conductive composition as a thin film to a substrate which has been treated to have a silicone pressure-sensitive adhesive releasable surface, and curing the composition, the composition comprising as essential components, (a) an organopolysiloxane having alkenyl radicals, (b) a heat conductive filler, the filler containing at least 30 vol % of aluminum powder based on its total volume, (c) an organohydrogenpolysiloxane, (d) a platinum group metal catalyst, (e) a reaction regulator, and (f) a silicone resin.

摘要翻译： 即使以单层或薄膜形式即可处理的导热固化产品也可以容易地附着在发热部件或散热部件上，并提供薄膜形式的合适的粘性和导热性 以及其制备方法。 通过将导热组合物作为薄膜施加到已经被处理以具有硅氧烷压敏粘合剂可释放表面的基底并且固化该组合物，该组合物包含作为必要成分的组合物，（a） 具有烯基的有机聚硅氧烷，（b）导热填料，所述填料含有至少30体积％的铝粉基于其总体积，（c）有机氢聚硅氧烷，（d）铂族金属催化剂，（e） 反应调节剂，和（f）有机硅树脂。

公开(公告)号：US08277770B2

公开(公告)日：2012-10-02

申请号：US11882379

申请日：2007-08-01

申请人： Yuji Awano ,  Shigeya Naritsuka ,  Akio Kawabata ,  Takahiro Maruyama

发明人： Yuji Awano ,  Shigeya Naritsuka ,  Akio Kawabata ,  Takahiro Maruyama

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162

摘要： Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

摘要翻译： 将碳原子供给到侧壁的圆形（或部分圆形）中具有三角形格子的原子排列的催化金属颗粒10，具有反映三角形格子的原子排列的六元结构的石墨片18是 由金属催化剂连续形成，由此形成碳原子的管状结构。 因此，管状结构的手性可以通过相对于三角形格子的方向的石墨片的生长方向来控制，并且可以通过催化金属颗粒的尺寸来控制管状结构的直径。

公开(公告)号：US20110215423A1

公开(公告)日：2011-09-08

申请号：US13040610

申请日：2011-03-04

申请人： Toshiaki IWAMATSU ,  Kozo ISHIKAWA ,  Masashi KITAZAWA ,  Kiyoshi HAYASHI ,  Takahiro MARUYAMA ,  Masaaki SHINOHARA ,  Kenji KAWAI

发明人： Toshiaki IWAMATSU ,  Kozo ISHIKAWA ,  Masashi KITAZAWA ,  Kiyoshi HAYASHI ,  Takahiro MARUYAMA ,  Masaaki SHINOHARA ,  Kenji KAWAI

IPC分类号： H01L29/772 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L29/66621 ,  H01L21/28 ,  H01L29/66795 ,  H01L29/772 ,  H01L29/7834 ,  Y02E10/50

摘要： There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.

摘要翻译： 提供了可以在不劣化特性的情况下小型化的半导体器件及其制造方法。 半导体器件包括：主表面，源极区域和漏极区域在主表面彼此分离形成的半导体衬底;形成在源区域和漏极区域之间的主表面上的栅电极层;第一 形成为与源极区域的表面接触的导电层，以及形成为与漏极区域的表面接触的第二导电层。 在主表面上形成凹部，以便通过栅极电极层下面的部分从第一导电层和源极区域之间的接触区域延伸到第二导电层和漏极区域之间的接触区域。

公开(公告)号：US20110033910A1

公开(公告)日：2011-02-10

申请号：US12937603

申请日：2009-04-15

申请人： Maho Yamanaka ,  Takahiro Maruyama ,  Toru Futami

发明人： Maho Yamanaka ,  Takahiro Maruyama ,  Toru Futami

IPC分类号： C12N13/00 ,  C12M1/42

CPC分类号： G01N33/5438 ,  G01N33/569

摘要： The cell selection apparatus includes: a cell selection vessel which has a pair of electrodes and a sheet-like insulating material having a plurality of micropores, with a recognition molecule bindable to the specific substance being disposed on a bottom face of the micropore; and a power supply, wherein the power supply includes a cell-immobilization power supply and a cell-taking power supply. The cell selection method uses the cell selection apparatus, including; introducing cells into a cell selection area; immobilizing these cells in the micropores; effecting a binding reaction between the specific substance and the recognition molecule; thereafter, taking out a cell of which the specific substance is not or is weakly bound to the recognition molecule, from the micropore; otherwise alternatively, leaving a cell of which the specific substance on the surface of the cell is strongly bound to the recognition molecule, behind in the micropore.

摘要翻译： 细胞选择装置包括：具有一对电极的细胞选择容器和具有多个微孔的片状绝缘材料，具有与所述特定物质结合的识别分子设置在所述微孔的底面上; 以及电源，其中所述电源包括电池固定电源和单电池电源。 小区选择方法使用小区选择装置，包括： 将细胞引入细胞选择区域; 将这些细胞固定在微孔中; 实现特定物质与识别分子之间的结合反应; 此后从微孔中取出特定物质不与识别分子结合的细胞; 或者，留下细胞表面上的特定物质的细胞与识别分子强烈结合在微孔后面。

公开(公告)号：US20100006557A1

公开(公告)日：2010-01-14

申请号：US11996583

申请日：2006-07-26

申请人： Takahiro Maruyama

发明人： Takahiro Maruyama

IPC分类号： F23Q7/22 ,  B23K1/00 ,  H05B3/10 ,  B32B1/08

CPC分类号： B32B15/043 ,  F23Q7/001 ,  H05B3/141 ,  H05B3/48 ,  H05B2203/027 ,  Y10T428/12535 ,  Y10T428/131

摘要： A ceramic heater comprising a rod-like ceramic member in which a metallized layer is formed on at least a part of an outer surface of the ceramic member, and a tubular metal fitting in which at least a part of the ceramic member is inserted, the inner surface of the tubular metal fitting and the metallized layer being brazed through a brazing member. The ceramic member has a small diameter portion in a region which is located closer to a first end of the ceramic member than the metallized layer and which is inside the tubular metal fitting. A part of the space between the small diameter portion and the inner surface of the tubular metal fitting is filled with the brazing member, the inner surface facing to the part of the small diameter. Consequently, even under severe conditions, such as a high temperature and/or a high pressure, a highly durable brazing structure, such as the ceramic heater, including a brazed portion which has high welding reliability can be obtained.

摘要翻译： 一种陶瓷加热器，包括棒状陶瓷构件，其中在陶瓷构件的外表面的至少一部分上形成有金属化层，以及管状金属配件，其中陶瓷构件的至少一部分被插入其中， 管状金属配件的内表面和金属化层通过钎焊构件钎焊。 陶瓷构件在位于比金属化层更靠近陶瓷构件的第一端并且位于管状金属配件内部的区域中具有小直径部分。 小直径部分和管状金属配件的内表面之间的空间的一部分填充有钎焊构件，内表面面向小直径部分。 因此，即使在诸如高温和/或高压的苛刻条件下，也可以获得包括具有高焊接可靠性的钎焊部分的诸如陶瓷加热器的高度耐用的钎焊结构。

公开(公告)号：US20090136412A1

公开(公告)日：2009-05-28

申请号：US11882379

申请日：2007-08-01

申请人： Yuji Awano ,  Shigeya Naritsuka ,  Akio Kawabata ,  Takahiro Maruyama

发明人： Yuji Awano ,  Shigeya Naritsuka ,  Akio Kawabata ,  Takahiro Maruyama

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162

摘要： Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

摘要翻译： 将碳原子供给到侧壁的圆形（或部分圆形）中具有三角形格子的原子排列的催化金属颗粒10，具有反映三角形格子的原子排列的六元结构的石墨片18是 由金属催化剂连续形成，由此形成碳原子的管状结构。 因此，管状结构的手性可以通过相对于三角形格子的方向的石墨片的生长方向来控制，并且可以通过催化金属颗粒的尺寸来控制管状结构的直径。

公开(公告)号：US20080308869A1

公开(公告)日：2008-12-18

申请号：US12194631

申请日：2008-08-20

申请人： Hidekazu ODA ,  Takahisa Eimori ,  Jiro Yugami ,  Takahiro Maruyama ,  Tomohiro Yamashita ,  Yukio Nishida ,  Shinichi Yamanari ,  Takashi Hayashi ,  Kenichi Mori

发明人： Hidekazu ODA ,  Takahisa Eimori ,  Jiro Yugami ,  Takahiro Maruyama ,  Tomohiro Yamashita ,  Yukio Nishida ,  Shinichi Yamanari ,  Takashi Hayashi ,  Kenichi Mori

IPC分类号： H01L29/00

CPC分类号： H01L21/823842

摘要： The technology which can control a threshold value appropriately, adopting the material which fitted each gate electrode of the MOS structure from which a threshold value differs without making the manufacturing process complicated, and does not make remarkable diffusion to the channel region from the gate electrode is offered.The PMOS transistor has a gate electrode GP, and an N type well which confronts each other via a gate insulating film with this, and the NMOS transistor has a gate electrode GN, and an P type well which confronts each other via a gate insulating film with this. While gate electrode GN includes a polycrystalline silicon layer, gate electrode GP is provided with the laminated structure of a metal layer/polycrystalline silicon layer.

摘要翻译： 可以适当地控制阈值的技术，采用在不使制造过程复杂的情况下使阈值相差不同的MOS结构的每个栅电极的装配材料，并且不会从栅电极向沟道区域显着扩散的技术是 提供。 PMOS晶体管具有栅电极GP和通过栅绝缘膜相互面对的N型阱，并且NMOS晶体管具有栅电极GN和通过栅极绝缘膜相互面对的P型阱 有了这个。 当栅电极GN包括多晶硅层时，栅电极GP具有金属层/多晶硅层的叠层结构。

公开(公告)号：US20070099406A1

公开(公告)日：2007-05-03

申请号：US11551861

申请日：2006-10-23

申请人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

发明人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/336

CPC分类号： H01L21/32134 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/4958

摘要： In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.

摘要翻译： 在本发明的半导体器件制造方法中，在栅极绝缘膜上形成用于形成栅电极的金属膜。 随后，当处理金属膜时，通过使用给定的化学液体的湿蚀刻工艺去除部分金属膜。