公开(公告)号：US20140014950A1

公开(公告)日：2014-01-16

申请号：US13976056

申请日：2011-12-20

申请人： Takeshi Hara ,  Hirohiko Nishiki ,  Hisao Ochi ,  Tetsuya Aita ,  Tohru Okabe ,  Yuya Nakano

发明人： Takeshi Hara ,  Hirohiko Nishiki ,  Hisao Ochi ,  Tetsuya Aita ,  Tohru Okabe ,  Yuya Nakano

IPC分类号： H01L27/12

CPC分类号： H01L27/1248 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L27/124 ,  H01L27/1296 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.

摘要翻译： 有源矩阵基板（20a）包括形成在绝缘基板（10a）上的栅极（25）和形成在栅电极（25）上并由焙烧的SOG材料制成的平坦化膜（26）。 栅电极（25）是包括形成在绝缘基板（10a）上的由铜以外的金属制成的第一导电膜（27）的多层膜，形成在第一导电膜（27）上的第二导电膜（28） 并由铜制成，第三导电膜（29）形成在第二导电膜（28）上，并由除铜以外的金属制成。

公开(公告)号：US20060086937A1

公开(公告)日：2006-04-27

申请号：US10526009

申请日：2003-08-29

申请人： Akiyoshi Fujii ,  Takaya Nakabayashi ,  Hisao Ochi ,  Takaeshi Hara ,  Yuhichi Saitoh

发明人： Akiyoshi Fujii ,  Takaya Nakabayashi ,  Hisao Ochi ,  Takaeshi Hara ,  Yuhichi Saitoh

IPC分类号： H01L29/04

CPC分类号： H01L27/1292 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78633 ,  H01L29/78696

摘要： A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.

摘要翻译： TFT阵列基板包括薄膜晶体管部分，其中栅电极形成在基板上，半导体层经栅极绝缘层形成在栅电极上。 该TFT阵列基板的半导体层具有通过滴下液滴形成的形状。 因此，可以通过滴下液滴直接形成半导体层或用于形成半导体层的抗蚀剂层。 因此，本发明允许使用喷墨方法，从而降低制造工艺的成本和数量。

公开(公告)号：US20050173734A1

公开(公告)日：2005-08-11

申请号：US10515120

申请日：2003-03-26

申请人： Hiroto Yoshioka ,  Tatsuya Fujita ,  Hisao Ochi ,  Toshinori Sugihara ,  Takeshi Hara ,  Masashi Kawasaki ,  Hideo Ohno

发明人： Hiroto Yoshioka ,  Tatsuya Fujita ,  Hisao Ochi ,  Toshinori Sugihara ,  Takeshi Hara ,  Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L27/10

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an inverse-stagger MOSFET (1), a gate insulating layer (4) made of amorphous aluminum oxide is so formed as to face a channel layer (5) which serves as the semiconductor layer, and which is made of zinc oxide. With this arrangement, a defect level at an interface between the channel layer (5) and the gate insulating layer (4) is reduced, thereby obtaining performance equivalent to that of a semiconductor apparatus in which all the layered films are crystalline. This technique is applicable to a staggered MOSFET and the like, and has high versatility.

摘要翻译： 在反交错MOSFET（1）中，由非晶态氧化铝构成的栅极绝缘层（4）形成为面对用作半导体层的沟道层（5），并且由氧化锌制成。 通过这种布置，沟道层（5）和栅极绝缘层（4）之间的界面处的缺陷水平被降低，从而获得与所有层状膜都是结晶的半导体装置的性能相当的性能。 这种技术适用于交错的MOSFET等，具有很高的通用性。

公开(公告)号：US08933452B2

公开(公告)日：2015-01-13

申请号：US13512474

申请日：2010-11-05

申请人： Hisao Ochi

发明人： Hisao Ochi

IPC分类号： H01L29/04 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45 ,  G02F1/1362

CPC分类号： H01L27/1248 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  H01L29/4908

摘要： Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrode (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole portion (H), by anodically oxidizing a three-layered metal film (metal film) (21), an anodic oxidation film (29) is formed on the three-layered metal film (21) so as to fill a contact hole of a protective layer (27), with an end portion of the anodic oxidation film (29) being placed under an insulating layer (28). In the contact hole portion (H), the pixel electrode (19) and the three-layered metal film (21) are connected to each other via the anodic oxidation film (29).

摘要翻译： 公开了一种有源矩阵基板（5），每个具有薄​​膜晶体管（18）和连接到薄膜晶体管（18）的像素电极（19））的像素布置在矩阵中，并且包括基板 在其上形成矩阵中的像素的材料（5a）。 在接触孔部（H）中，通过阳极氧化三层金属膜（金属膜）（21），在三层金属膜（21）上形成阳极氧化膜（29），以填充 保护层（27）的接触孔与阳极氧化膜（29）的端部配置在绝缘层（28）下方。 在接触孔部分（H）中，像素电极（19）和三层金属膜（21）经由阳极氧化膜（29）彼此连接。

公开(公告)号：US20100065191A1

公开(公告)日：2010-03-18

申请号：US12527932

申请日：2007-11-13

申请人： Akitsugu Hatano ,  Yoshiki Nakatani ,  Hisao Ochi

发明人： Akitsugu Hatano ,  Yoshiki Nakatani ,  Hisao Ochi

IPC分类号： B65H21/00 ,  B32B38/10 ,  B29C65/00 ,  B32B38/00 ,  B65H20/00

CPC分类号： B65H19/1852 ,  B29C65/02 ,  B29C65/48 ,  B29C65/5042 ,  B29C66/1142 ,  B29C66/43 ,  B29C66/71 ,  B29C66/8322 ,  B29C66/853 ,  B29C2035/0827 ,  B29K2079/08 ,  B65H19/28 ,  B65H19/30 ,  B65H20/30 ,  B65H23/048 ,  B65H2301/414227 ,  Y10T156/1712 ,  B29K2081/06 ,  B29K2069/00 ,  B29K2067/003 ,  B29K2067/00 ,  B29K2033/08

摘要： Substrate material processing equipment includes: a substrate material conveying section receiving a substrate material from a first line and conveying it to a second line; a first substrate material dividing section dividing the substrate material; a substrate material recovery section recovering the substrate material from its start edge formed by division; a substrate material supply section supplying a substrate material to an end edge of the substrate material which is formed by division; a first substrate material joining section joining the end edge of the substrate material to a start edge of the substrate material supplied from the substrate material supply section; a second substrate material dividing section provided between the substrate material supply section and the first substrate material joining section; a third substrate material dividing section provided between the first line and the substrate material recovery section; and a second substrate material joining section joining a start edge of the substrate material which is formed by division by the third substrate material dividing section to an end edge of the substrate material which is formed by division by the second substrate material dividing section.

摘要翻译： 基板材料加工设备包括：基板材料输送部分，从第一线路接收基板材料并将其输送到第二线路; 分割所述基板材料的第一基板材料分割部; 基板材料回收部，从通过分割形成的起始边缘回收所述基板材料; 基板材料供给部，其将基板材料供给到通过分割而形成的基板材料的端部边缘; 将基板材料的端缘连接到从基板材料供给部供给的基板材料的起始边缘的第一基板材料接合部; 第二基板材料分割部，设置在所述基板材料供给部与所述第一基板材料接合部之间; 第三基板材料分割部，设置在第一线和基板材料回收部之间; 以及第二基板材料接合部，其将通过由第三基板材料分割部分割形成的基板材料的起始边缘接合到由第二基板材料分割部分分割形成的基板材料的端部边缘。

公开(公告)号：US06788376B2

公开(公告)日：2004-09-07

申请号：US09768725

申请日：2001-01-24

申请人： Yoshihiro Izumi ,  Yoshimasa Chikama ,  Hisao Ochi

发明人： Yoshihiro Izumi ,  Yoshimasa Chikama ,  Hisao Ochi

IPC分类号： G02F11343

CPC分类号： G02F1/13439

摘要： Pixel electrode fabricating processes are remarkably reduced. A pixel electrode 22 is formed without using any vacuum film forming apparatus by employing a sol-gel material and coating an insulating substrate with the sol-gel material by a spin-coating method or a dipping method, and this allows the fabricating processes to be reduced. During this course, by forming the pixel electrode before the formation of a scanning electrode 23, signal wiring lines and a TFT 24, the electrode wiring and the TFT 24 suffer no thermal damage even if they have a heat resistance temperature of about 350° C. Furthermore, by using a sol-gel material having photosensitivity, patterning processes are reduced by the elimination of the photoresist patterning process and the etching process. An investment for the equipment of a fabricating apparatus can thus be reduced to allow the cost reduction of the active matrix substrate itself to be achieved.

摘要翻译： 像素电极制造工艺显着降低。 通过使用溶胶 - 凝胶材料并且通过旋涂法或浸渍法将溶胶凝胶材料涂覆绝缘基板，而不使用任何真空成膜装置形成像素电极22，这使制造工艺成为 减少 在该过程中，通过在形成扫描电极23，信号布线和TFT24之前形成像素电极，即使电极布线和TFT24具有约350℃的耐热温度也不会发生热损伤 此外，通过使用具有光敏性的溶胶 - 凝胶材料，通过消除光致抗蚀剂图案化工艺和蚀刻工艺来减少图案化工艺。 因此，可以减少对制造装置的设备的投资，以实现有源矩阵基板本身的成本降低。

公开(公告)号：US06720211B2

公开(公告)日：2004-04-13

申请号：US10137217

申请日：2002-05-02

申请人： Yoshihiro Izumi ,  Yoshimasa Chikama ,  Hisao Ochi

发明人： Yoshihiro Izumi ,  Yoshimasa Chikama ,  Hisao Ochi

IPC分类号： H01L2900

CPC分类号： H01L21/288 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/14609 ,  H01L27/14676 ,  H01L27/3244 ,  H01L29/4908

摘要： An oxide film is formed on an insulating substrate by means of a wet type film forming technique such as a sol-gel method, a chemical deposition method or a liquid phase deposition method. Next, the oxide film is patterned according to the shape of interconnections. Then, a metal film made of Ni is formed on an oxide film pattern by such a wet type film forming technique as a wet type plating method. Further, a metal film made of Au that has a low resistance is laminated on the metal film made of Ni by electroless plating, and a metal film made of Cu that has a low resistance and is low cost is laminated on the Au film by electroplating. Thus, by the above method for manufacturing electric interconnections, a large-area interconnection substrate for a display device and an image detector is able to be fabricated at low cost without using a vacuum film forming apparatus.

摘要翻译： 通过溶胶 - 凝胶法，化学沉积法或液相沉积法等湿式成膜技术，在绝缘基板上形成氧化膜。 接下来，根据互连的形状对氧化膜进行图案化。 然后，通过湿式电镀法的湿式成膜技术，在氧化膜图案上形成由Ni制成的金属膜。 此外，通过无电解电镀将由Ni制成的金属膜层压在由Ni制成的金属膜上，并且通过电镀在Au膜上层压由Cu制成的具有低电阻和低成本的金属膜 。 因此，通过上述制造电互连的方法，可以以低成本制造用于显示装置的大面积互连基板和图像检测器，而不使用真空成膜装置。

公开(公告)号：US09087749B2

公开(公告)日：2015-07-21

申请号：US13976056

申请日：2011-12-20

申请人： Takeshi Hara ,  Hirohiko Nishiki ,  Hisao Ochi ,  Tetsuya Aita ,  Tohru Okabe ,  Yuya Nakano

发明人： Takeshi Hara ,  Hirohiko Nishiki ,  Hisao Ochi ,  Tetsuya Aita ,  Tohru Okabe ,  Yuya Nakano

IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/45

CPC分类号： H01L27/1248 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L27/124 ,  H01L27/1296 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.

摘要翻译： 有源矩阵基板（20a）包括形成在绝缘基板（10a）上的栅极（25）和形成在栅电极（25）上并由焙烧的SOG材料制成的平坦化膜（26）。 栅电极（25）是包括形成在绝缘基板（10a）上的由铜以外的金属制成的第一导电膜（27）的多层膜，形成在第一导电膜（27）上的第二导电膜（28） 并由铜制成，第三导电膜（29）形成在第二导电膜（28）上，并由除铜以外的金属制成。

公开(公告)号：US08316907B2

公开(公告)日：2012-11-27

申请号：US12527932

申请日：2007-11-13

申请人： Akitsugu Hatano ,  Yoshiki Nakatani ,  Hisao Ochi

发明人： Akitsugu Hatano ,  Yoshiki Nakatani ,  Hisao Ochi

IPC分类号： B65H69/00

CPC分类号： B65H19/1852 ,  B29C65/02 ,  B29C65/48 ,  B29C65/5042 ,  B29C66/1142 ,  B29C66/43 ,  B29C66/71 ,  B29C66/8322 ,  B29C66/853 ,  B29C2035/0827 ,  B29K2079/08 ,  B65H19/28 ,  B65H19/30 ,  B65H20/30 ,  B65H23/048 ,  B65H2301/414227 ,  Y10T156/1712 ,  B29K2081/06 ,  B29K2069/00 ,  B29K2067/003 ,  B29K2067/00 ,  B29K2033/08

摘要： Substrate material processing equipment includes: a substrate material conveying section receiving a substrate material from a first line and conveying it to a second line; a first substrate material dividing section dividing the substrate material; a substrate material recovery section recovering the substrate material from its start edge formed by division; a substrate material supply section supplying a substrate material to an end edge of the substrate material which is formed by division; a first substrate material joining section joining the end edge of the substrate material to a start edge of the substrate material supplied from the substrate material supply section; a second substrate material dividing section provided between the substrate material supply section and the first substrate material joining section; a third substrate material dividing section provided between the first line and the substrate material recovery section; and a second substrate material joining section joining a start edge of the substrate material which is formed by division by the third substrate material dividing section to an end edge of the substrate material which is formed by division by the second substrate material dividing section.

摘要翻译： 基板材料加工设备包括：基板材料输送部分，从第一线路接收基板材料并将其输送到第二线路; 分割所述基板材料的第一基板材料分割部; 基板材料回收部，从通过分割形成的起始边缘回收所述基板材料; 基板材料供给部，其将基板材料供给到通过分割而形成的基板材料的端部边缘; 将基板材料的端缘连接到从基板材料供给部供给的基板材料的起始边缘的第一基板材料接合部; 第二基板材料分割部，设置在所述基板材料供给部与所述第一基板材料接合部之间; 第三基板材料分割部，设置在第一线和基板材料回收部之间; 以及第二基板材料接合部，其将通过由第三基板材料分割部分割形成的基板材料的起始边缘接合到由第二基板材料分割部分分割形成的基板材料的端部边缘。

公开(公告)号：US20120235149A1

公开(公告)日：2012-09-20

申请号：US13512474

申请日：2010-11-05

申请人： Hisao Ochi

发明人： Hisao Ochi

IPC分类号： H01L27/15 ,  H01L33/08

CPC分类号： H01L27/1248 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  H01L29/4908

摘要： Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrode (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole portion (H), by anodically oxidizing a three-layered metal film (metal film) (21), an anodic oxidation film (29) is formed on the three-layered metal film (21) so as to fill a contact hole of a protective layer (27), with an end portion of the anodic oxidation film (29) being placed under an insulating layer (28). In the contact hole portion (H), the pixel electrode (19) and the three-layered metal film (21) are connected to each other via the anodic oxidation film (29).

摘要翻译： 公开了一种有源矩阵基板（5），每个具有薄​​膜晶体管（18）和连接到薄膜晶体管（18）的像素电极（19））的像素布置在矩阵中，并且包括基板 在其上形成矩阵中的像素的材料（5a）。 在接触孔部（H）中，通过阳极氧化三层金属膜（金属膜）（21），在三层金属膜（21）上形成阳极氧化膜（29），以填充 保护层（27）的接触孔与阳极氧化膜（29）的端部配置在绝缘层（28）下方。 在接触孔部分（H）中，像素电极（19）和三层金属膜（21）经由阳极氧化膜（29）彼此连接。