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    Charge-up prevention method and ion implanting apparatus
    1.
    发明授权
    Charge-up prevention method and ion implanting apparatus 失效
    充电预防方法和离子注入装置

    公开(公告)号：US6043499A

    公开(公告)日：2000-03-28

    申请号：US54496

    申请日：1998-04-03

    申请人： Takayoshi Seki ,  Katsumi Tokiguchi

    发明人： Takayoshi Seki ,  Katsumi Tokiguchi

    IPC分类号： H01J37/317 ,  H01J37/02 ,  H01J37/304

    CPC分类号： H01J37/026 ,  H01J2237/0044 ,  H01J2237/31701

    摘要： A charge-up prevention method for use when ion beams are implanted simultaneously with electrons, prevents charge-up on a plurality of objects to be irradiated. A supply quantity of electrons is controlled while directly measuring the potential of the objects that are to be irradiated, and an ion implanting apparatus which irradiates ion beams onto objects which are arranged in a circular shape and moving while rotating, includes an electron source irradiating simultaneously ion beams and electrons for charge prevention, and a controller for controlling a supply quantity of electrons while directly measuring the potential of objects to be irradiated.

    摘要翻译： 当与电子同时注入离子束时使用的防止充电的方法防止对多个被照射物体的充电。 在直接测量被照射物体的电位的同时控制电子的供给量，将离子束照射到圆形状并旋转移动的物体上的离子注入装置包括同时照射的电子源 用于防止电荷的离子束和电子，以及用于在直接测量被照射物体的电位的同时控制电子供给量的控制器。

    Microwave ion source
    2.
    发明授权
    Microwave ion source 失效
    MICROWAVE离子源

    公开(公告)号：US5053678A

    公开(公告)日：1991-10-01

    申请号：US323837

    申请日：1989-03-15

    申请人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya

    发明人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya

    IPC分类号： H01J27/18

    CPC分类号： H01J27/18

    摘要： A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.

    Ion implanter
    4.
    发明授权
    Ion implanter 失效
    离子注入机

    公开(公告)号：US5729027A

    公开(公告)日：1998-03-17

    申请号：US454548

    申请日：1995-05-30

    申请人： Katsumi Tokiguchi ,  Takayoshi Seki ,  Tetsunori Kaji

    发明人： Katsumi Tokiguchi ,  Takayoshi Seki ,  Tetsunori Kaji

    IPC分类号： C23C14/48 ,  H01J37/317 ,  H01L21/265

    CPC分类号： H01J37/317 ,  H01J2237/04756

    摘要： An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.

    摘要翻译： 使用小于10keV的有限能量使用质量分离的离子实现离子注入的离子注入机将离子源和质量分离器之间的减速器定位，并且将设置在离子源和减速器之间的束传送空间保持在 更高的负电压以使离子束组合减速，确保在目标表面上保持超过1mA的大电流离子束。

    Method and apparatus for forming a film
    6.
    发明授权
    Method and apparatus for forming a film 失效
    用于形成膜的方法和装置

    公开(公告)号：US5064520A

    公开(公告)日：1991-11-12

    申请号：US480131

    申请日：1990-02-14

    申请人： Kiyoshi Miyake ,  Yasunori Ohno ,  Masato Isogai ,  Yukio Nakagawa ,  Takayoshi Seki ,  Koukichi Ouhata ,  Kenichi Natsui ,  Terunori Warabisako ,  Keiji Arimatsu

    发明人： Kiyoshi Miyake ,  Yasunori Ohno ,  Masato Isogai ,  Yukio Nakagawa ,  Takayoshi Seki ,  Koukichi Ouhata ,  Kenichi Natsui ,  Terunori Warabisako ,  Keiji Arimatsu

    IPC分类号： C23C14/12 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  C23C14/12 ,  C23C14/3407

    摘要： This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

    Ion implanter
    7.
    发明授权
    Ion implanter 有权

    公开(公告)号：US06614190B2

    公开(公告)日：2003-09-02

    申请号：US09939749

    申请日：2001-08-28

    申请人： Hiroyuki Tomita ,  Kazuo Mera ,  Isao Hashimoto ,  Yasunori Nakano ,  Takayoshi Seki

    发明人： Hiroyuki Tomita ,  Kazuo Mera ,  Isao Hashimoto ,  Yasunori Nakano ,  Takayoshi Seki

    IPC分类号： H05B3126

    CPC分类号： H01J37/3171 ,  H01J2237/20 ,  H01L21/68707

    摘要： A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.