Microwave ion source
    1.
    发明授权
    Microwave ion source 失效
    MICROWAVE离子源

    公开(公告)号:US5053678A

    公开(公告)日:1991-10-01

    申请号:US323837

    申请日:1989-03-15

    IPC分类号: H01J27/18

    CPC分类号: H01J27/18

    摘要: A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.

    Variable-frequency type radio-frequency quadrupole accelerator including
quadrupole cooling means
    3.
    发明授权
    Variable-frequency type radio-frequency quadrupole accelerator including quadrupole cooling means 失效
    包括四极冷却装置的可变频率型射频四极加速器

    公开(公告)号:US5506472A

    公开(公告)日:1996-04-09

    申请号:US240319

    申请日:1994-05-10

    CPC分类号: H05H7/02

    摘要: A secondary coil forming a resonant circuit in cooperation with a quadrupole is composed of conductive tubes and cooled by feeding coolant such as pure water into the tubes which serve as coolant passages. This makes it possible to minimize thermal deformation of the secondary coil when a variable-frequency type radio-frequency quadrupole accelerator is driven with a large amount of power. As a result, variation of the resonant frequency of the resonant circuit, resulting from the deformation of the secondary coil, can be minimized. Consequently, a given ion acceleration ability can be provided. When a coolant passage for use in cooling the primary coil is included and coolant such as pure water is fed into the coolant passage, thermal deformation of the primary coil can be minimized. Thus, impedance matching with the resonant circuit can be maintained on a stable basis. When the secondary coil is made by aligning several unit secondary coils in the axial direction of the quadrupole, the resonant frequency can be varied by mounting or dismounting the unit secondary coils independently.

    摘要翻译: 与四极合作形成谐振电路的次级线圈由导电管组成,并通过将诸如纯净水的冷却剂送入用作冷却剂通道的管中来冷却。 这使得当以大量功率驱动可变频率型射频四极加速器时,可以最小化次级线圈的热变形。 结果,由二次线圈的变形引起的谐振电路的谐振频率的变化可以最小化。 因此,可以提供给定的离子加速能力。 当包括用于冷却初级线圈的冷却剂通道时,诸如纯水的冷却剂被供给到冷却剂通道中,可以使初级线圈的热变形最小化。 因此,可以在稳定的基础上保持与谐振电路的阻抗匹配。 当通过在四极杆的轴向对准多个单元次级线圈来制造次级线圈时,可以通过独立地安装或拆卸单元次级线圈来改变谐振频率。

    Ion implanting apparatus
    4.
    发明授权
    Ion implanting apparatus 失效
    离子注入装置

    公开(公告)号:US5349196A

    公开(公告)日:1994-09-20

    申请号:US43794

    申请日:1993-04-07

    CPC分类号: H01J37/3007 H01J37/3171

    摘要: An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.

    摘要翻译: 离子注入装置包括设置在离子源和RFQ加速器之间的磁性四极透镜。 磁性四极杆透镜在离子束收敛时进行从离子源提取的离子束的质谱,并且与静电四极透镜相比,由于空间电荷效应而减小离子束的发散。 使用磁性四极透镜使得可以最大程度地利用从离子源提取的离子束并且在离子束通过期间限制离子束的电流的最小化,从而使其成为可能 以产生具有大约几十毫安量级的大电流的高能离子束。

    Ion source
    5.
    发明授权
    Ion source 失效
    离子源

    公开(公告)号:US4658143A

    公开(公告)日:1987-04-14

    申请号:US711824

    申请日:1985-03-14

    摘要: An ion source equipped with an ion beam exit slit for extracting ions from plasma generated in feed gas introduced into a discharge chamber, and with gas inlet or inlets for introducing the feed gas into the discharge chamber in close proximity of the ion beam exit slit. Ion extraction can be made stably without any deposit on the ion beam exit slit even when a boron halide is used as the feed gas. The effect of the ion source can be further enhanced by adding oxygen, hydrogen or gas of an oxygen-containing compound to the feed gas, and by using a microwave.

    摘要翻译: 离子源配备有用于从引入到放电室的进料气体中产生的等离子体提取离子的离子束出口狭缝,以及用于将进料气体引入离子束出口狭缝附近的放电室的气体入口或入口。 即使使用卤化硼作为原料气体,也可以稳定地进行离子提取,而不会在离子束出口狭缝上沉积。 通过向原料气中加入含氧化合物的氧气,氢气或气体,以及使用微波可以进一步提高离子源的效果。

    Microwave discharge ion source
    6.
    发明授权
    Microwave discharge ion source 失效
    微波放电离子源

    公开(公告)号:US4409520A

    公开(公告)日:1983-10-11

    申请号:US247072

    申请日:1981-03-24

    CPC分类号: H01J23/36 H01J27/18 H01J37/08

    摘要: A microwave discharge ion source according to this invention comprises a microwave generator, a discharge chamber having ridged electrodes, and a waveguide connecting the microwave generator with the discharge chamber. This waveguide consists of a waveguide having no ridged electrode, and a waveguide having ridged electrodes. Further, a vacuum-sealing dielectric plate is disposed at an intermediate position or an end part of the waveguide having no ridged electrode. A space in the waveguide as extends from the vacuum-sealing dielectric plate to the discharge chamber is filled with a dielectric.As a result, the design and fabrication of the vacuum-sealing dielectric plate are facilitated, and a microwave discharge ion source of high performance is provided.

    摘要翻译: 根据本发明的微波放电离子源包括微波发生器,具有脊状电极的放电室和将微波发生器与放电室连接的波导。 该波导由不具有脊状电极的波导和具有脊状电极的波导构成。 此外,真空密封电介质板设置在没有脊状电极的波导的中间位置或端部。 从真空密封电介质板延伸到放电室的波导中的空间填充有电介质。 结果,促进了真空密封电介质板的设计和制造,并且提供了高性能的微波放电离子源。

    Plasma ion source
    7.
    发明授权
    Plasma ion source 失效
    等离子体离子源

    公开(公告)号:US4629930A

    公开(公告)日:1986-12-16

    申请号:US517696

    申请日:1983-07-27

    IPC分类号: H01J27/02 H01J27/16 H05H7/08

    CPC分类号: H01J27/16 H01J27/022

    摘要: A plasma ion source includes a discharge chamber in which a plasma is produced by plasma generator, with an acceleration electrode being disposed adjacent to the discharge chamber in order to extract ions from the produced plasma. A deceleration electrode is disposed adjacent to the acceleration electrode to decelerate the extracted ions, and a ground electrode is disposed adjacent to the deceleration electrode. An insulator container is disposed so as to surround the discharge chamber and the respective electrodes, and a shield ring electrode of ground potential is disposed in the vicinity of the deceleration electrode and along an inner wall surface of the insulator container in order to prevent any discharge from arising across the deceleration electrode and the ground electrode.

    摘要翻译: 等离子体离子源包括其中由等离子体发生器产生等离子体的放电室,其中加速电极邻近放电室设置,以从所产生的等离子体中提取离子。 减速电极与加速电极相邻地设置,以使所提取的离子减速,并且接地电极与减速电极相邻配置。 绝缘体容器设置成围绕放电室和各个电极,并且将地电位的屏蔽环电极设置在减速电极附近并且沿着绝缘体容器的内壁表面设置,以防止任何放电 来自减速电极和接地电极。

    Charged particle accelerator using quadrupole electrodes
    9.
    发明授权
    Charged particle accelerator using quadrupole electrodes 失效
    使用四极电极的带电粒子加速器

    公开(公告)号:US4801847A

    公开(公告)日:1989-01-31

    申请号:US763133

    申请日:1985-07-29

    摘要: A charged particle accelerator is provided with quadrupole electrodes with surfaces that are opposed to each other and are undulated, and with an external resonance circuit. The external resonance circuit consists of a capacitor formed by the opposing electrodes, a variable capacitor provided in parallel with said capacitor, and a coil. The resonance frequency is variable. A direct current and an alternating current may be applied in a superposed manner to the quadrupole electrodes. The thus constructed accelerator can be employed for an ion implanter to implant a heavy-current ion beam of several hundred KeV to several MeV.

    摘要翻译: PCT No.PCT / JP84 / 00557 Sec。 371日期:1985年7月29日第 102(e)日期1985年7月29日PCT 1984年11月22日PCT公布。 公开号WO85 / 02489 日期:1985年6月6日。带电粒子加速器具有四极电极,四极电极具有彼此相对的并且起伏的表面,并具有外部谐振电路。 外部谐振电路包括由相对电极形成的电容器,与所述电容器并联设置的可变电容器和线圈。 共振频率是可变的。 直流电流和交流电可以叠加施加到四极电极。 这样构造的加速器可以用于离子注入机,以将几百KeV的大电流离子束注入几MeV。

    Ion implanter
    10.
    发明授权
    Ion implanter 失效
    离子注入机

    公开(公告)号:US4633138A

    公开(公告)日:1986-12-30

    申请号:US766393

    申请日:1985-08-16

    CPC分类号: H01J37/3171 G21K5/10

    摘要: In order to implant ions uniformly in a plurality of wafers, carriers, on which a plurality of wafers are mounted, are moved along a straight line one after another. An ion implanter comprises a beam sweep width controller for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides approximately with the shape of the wafers in which ions are to be implanted and a carrier speed controller for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform. The beam sweep width controller includes a detector for detecting the width of a wafer in which ions are being implanted in the one direction and a controller for varying the beam sweep width, depending on the width of the wafer thus detected. The carrier speed controller varies the carrier speed inversely proportionally to the width of the wafer thus detected.

    摘要翻译: 为了将离子均匀地注入到多个晶片中,其上安装有多个晶片的载体沿着直线一个接一个地移动。 离子注入机包括用于以这样一种方式控制光束扫描宽度的光束扫描宽度控制器,其中通过扫描其被离子束扫描的区域大致与离子将被注入的晶片的形状重合,并且载波速度控制器 用于根据光束扫描宽度控制载体速度,使得植入晶片中的离子的剂量是均匀的。 光束扫描宽度控制器包括检测器,用于检测其中沿一个方向注入离子的晶片的宽度,以及用于根据检测到的晶片的宽度改变光束扫描宽度的控制器。 载波速度控制器将载波速度与所检测的晶片的宽度成反比地变化。