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公开(公告)号:US08431291B2
公开(公告)日:2013-04-30
申请号:US13281198
申请日:2011-10-25
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
CPC分类号: G06F17/5068 , G03F1/00 , G03F1/68
摘要: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译: 还提供强度选择性曝光光掩模,还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。
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公开(公告)号:US20100261118A1
公开(公告)日:2010-10-14
申请号:US12421378
申请日:2009-04-09
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
摘要: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.
摘要翻译: 提供了分级光掩模。 光掩模包括包括第一多个子分辨率特征的第一区域和包括第二多个子分辨率特征的第二区域。 第一个区域阻止了第一个入射辐射的百分比。 第二个区域阻挡了入射辐射的第二个百分比。 第一和第二个百分比是不同的。 还提供强度选择性曝光方法。
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公开(公告)号:US08673520B2
公开(公告)日:2014-03-18
申请号:US13046265
申请日:2011-03-11
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号: G03F1/00
CPC分类号: G06F17/5068 , G03F1/00 , G03F1/68
摘要: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译: 还提供强度选择性曝光光掩模,还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。 第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。
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公开(公告)号:US20120040278A1
公开(公告)日:2012-02-16
申请号:US13281198
申请日:2011-10-25
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号: G03F1/38
CPC分类号: G06F17/5068 , G03F1/00 , G03F1/68
摘要: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译: 还提供强度选择性曝光光掩模,还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。
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公开(公告)号:US20110217630A1
公开(公告)日:2011-09-08
申请号:US13046265
申请日:2011-03-11
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号: G03F1/00
CPC分类号: G06F17/5068 , G03F1/00 , G03F1/68
摘要: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译: 还提供强度选择性曝光光掩模,还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。 第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。
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公开(公告)号:US08003303B2
公开(公告)日:2011-08-23
申请号:US12421378
申请日:2009-04-09
申请人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
发明人: George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
摘要: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.
摘要翻译: 提供了分级光掩模。 光掩模包括包括第一多个子分辨率特征的第一区域和包括第二多个子分辨率特征的第二区域。 第一个区域阻止了第一个入射辐射的百分比。 第二个区域阻挡了入射辐射的第二个百分比。 第一和第二个百分比是不同的。 还提供强度选择性曝光方法。
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公开(公告)号:US08623231B2
公开(公告)日:2014-01-07
申请号:US12137186
申请日:2008-06-11
申请人: George Liu , Kuei Shun Chen , Vencent Chang , Chih-Yang Yeh
发明人: George Liu , Kuei Shun Chen , Vencent Chang , Chih-Yang Yeh
IPC分类号: H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , C25F3/00
CPC分类号: H01L21/30604 , C09K13/00 , C09K13/02 , C09K13/06 , H01L21/308 , H01L21/31111 , H01L21/31144 , H01L21/32134
摘要: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.
摘要翻译: 提供了一种用于蚀刻超薄膜的方法,其包括提供其上形成有超薄膜的基板,对形成在超薄膜上的感光层进行图案化,使用图案化感光层蚀刻超薄膜,以及去除图案化感光层 层。 蚀刻工艺包括利用具有抗扩散性载体的蚀刻材料,使得防止蚀刻材料扩散到感光层下方的区域并去除感光层下面的超薄膜的部分。
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公开(公告)号:US20090311628A1
公开(公告)日:2009-12-17
申请号:US12137186
申请日:2008-06-11
申请人: George Liu , Kuei Shun Chen , Vencent Chang , Chih-Yang Yeh
发明人: George Liu , Kuei Shun Chen , Vencent Chang , Chih-Yang Yeh
CPC分类号: H01L21/30604 , C09K13/00 , C09K13/02 , C09K13/06 , H01L21/308 , H01L21/31111 , H01L21/31144 , H01L21/32134
摘要: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.
摘要翻译: 提供了一种用于蚀刻超薄膜的方法,其包括提供其上形成有超薄膜的基板,对形成在超薄膜上的感光层进行图案化,使用图案化感光层蚀刻超薄膜,以及去除图案化感光层 层。 蚀刻工艺包括利用具有抗扩散性载体的蚀刻材料,使得防止蚀刻材料扩散到感光层下方的区域并去除感光层下面的超薄膜的部分。
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公开(公告)号:US07317052B2
公开(公告)日:2008-01-08
申请号:US10997850
申请日:2004-11-29
申请人: Jen-Luan Chen , Jhi-Hsien Huang , Wen-Liang Liu , Chih-Yang Yeh , Tsung-Lung Yang , Lon-Cheng Cheng
发明人: Jen-Luan Chen , Jhi-Hsien Huang , Wen-Liang Liu , Chih-Yang Yeh , Tsung-Lung Yang , Lon-Cheng Cheng
IPC分类号: C08L51/00
CPC分类号: C08F214/225 , C08F8/36 , C08F259/06 , C08F2810/20 , C08J3/28 , C08J7/12 , C08L51/003 , C08F259/08 , C08F212/08 , C08L2666/04
摘要: A fluoropolymer blend with high ionic conductivity that can be applied in electroactive polymer composite includes following components: PVDF-g-SPS (styrene-grafted and sulfonated PVDF); PVDF; and hydrocarbon- or fluoro-elastomer. PVDF-g-PS(styrene-grafted PVDF) □ PVDF and hydrocarbon- or fluoro-elastomer are mixed with specific proportion and being dissolved in an aprotic solvent □ the solution is then cast film on a substrate followed by sulfonation to give the aforementioned compound membrane. The obtained compound membrane has excellent properties, such as thermal stability, acid-alkali resistance, good mechanical performance, excellent flexibility, and capability for processing appropriate cross-link for further enhancing the mechanical performance of this membrane.
摘要翻译: 可以应用于电活性聚合物复合材料中的具有高离子电导率的含氟聚合物共混物包括以下组分:PVDF-g-SPS(苯乙烯接枝和磺化PVDF); PVDF; 和烃 - 或氟 - 弹性体。 PVDF-g-PS(苯乙烯接枝PVDF)□PVDF和烃 - 氟弹性体以特定比例混合并溶解在非质子溶剂中□然后将溶液流延到基材上,接着磺化,得到上述化合物 膜。 所获得的复合膜具有优异的性能,如热稳定性,耐酸碱性,良好的机械性能,优异的柔韧性,以及加工适当交联的能力,以进一步提高该膜的机械性能。
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公开(公告)号:US20130056837A1
公开(公告)日:2013-03-07
申请号:US13244365
申请日:2011-09-24
申请人: Jin-Aun Ng , Maxi Chang , Jen-Sheng Yang , Ta-Wei Lin , Shih-Hao Lo , Chih-Yang Yeh , Hui-Wen Lin , Jung-Hui Kao , Yuan-Tien Tu , Huan-Just Lin , Chih-Tang Peng , Pei-Ren Jeng , Bao-Ru Young , Hak-Lay Chuang
发明人: Jin-Aun Ng , Maxi Chang , Jen-Sheng Yang , Ta-Wei Lin , Shih-Hao Lo , Chih-Yang Yeh , Hui-Wen Lin , Jung-Hui Kao , Yuan-Tien Tu , Huan-Just Lin , Chih-Tang Peng , Pei-Ren Jeng , Bao-Ru Young , Hak-Lay Chuang
IPC分类号: H01L29/772 , H01L21/336 , H01L21/28
CPC分类号: H01L21/28229 , H01L21/28079 , H01L21/28088 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L21/823864 , H01L29/42364 , H01L29/4958 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6659
摘要: A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin dielectric film includes oxynitride combined with metal from the metal gate. The method further includes providing an interlayer dielectric (ILD) on either side of the metal gate structure.
摘要翻译: 制造集成电路的方法包括提供半导体衬底并在诸如高k电介质的衬底上形成栅极电介质。 在半导体衬底上形成金属栅极结构,并在其上形成一个薄的电介质膜。 薄介电膜包括从金属栅极与金属组合的氮氧化合物。 该方法还包括在金属栅极结构的两侧提供层间电介质(ILD)。
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