公开(公告)号：US06281098B1

公开(公告)日：2001-08-28

申请号：US09334166

申请日：1999-06-15

Applicant: Tihu Wang ,  Theodore F. Ciszek

Inventor： Tihu Wang ,  Theodore F. Ciszek

IPC: H01L2120

CPC classification number: C30B29/06 ,  C01B33/039 ,  C23C16/24 ,  C23C16/4402 ,  C23C16/4418 ,  C23C16/4488 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/54 ,  C30B25/02 ,  H01L21/28525

Abstract: A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Abstract translation: 在大气压的室中发生包括异质衬底的衬底上沉积多晶硅的方法，其中形成温度梯度，并且在整个过程中保持大气压力和温度梯度。 在室内形成阻止组分化学品（包括硅，碘，二碘化二硅和四碘化硅）排出的蒸气阻挡层。 沉积发生在蒸汽屏障下方。 该方法的一个实施方案还包括使用阻止氧气或其他杂质进入的覆盖气体的用途。 该过程能够重复，而不需要重置沉积区条件。

公开(公告)号：US4299648A

公开(公告)日：1981-11-10

申请号：US179919

申请日：1980-08-20

Applicant: Theodore F. Ciszek ,  Guenter H. Schwuttke

Inventor： Theodore F. Ciszek ,  Guenter H. Schwuttke

IPC: C30B15/24 ,  C30B15/34 ,  C30B29/06 ,  C30B29/64

CPC classification number: C30B15/34 ,  C30B15/24 ,  Y10T117/1044

Abstract: A method and apparatus for drawing a monocrystalline ribbon or web from a melt comprising utilizing a shaping die including at least two elements spaced one from the other each having a portion thereof located below the level of the melt and another portion located above the level of the melt a distance sufficient to form a raised meniscus of melt about the corresponding element.

Abstract translation: 一种用于从熔体中拉制单晶带或网的方法和装置，包括利用包括至少两个间隔开的元件的成形模具，每个元件具有位于熔体高度以下的部分， 熔化足以在相应元件周围形成升高的熔融液面的距离。

公开(公告)号：US5401331A

公开(公告)日：1995-03-28

申请号：US116849

申请日：1993-09-07

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: H01L31/0288 ,  H01L31/068 ,  H01L31/18 ,  H01L31/04 ,  H01L31/028

CPC classification number: H01L31/1804 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Abstract translation: 用于将太阳能转换成电信号的光伏器件包括衬底，在所述衬底上生长的光电导半导体材料层，其中所述衬底包括硼和硅的合金，所述硼的存在范围为0.1至1.3原子％ ，所述合金的晶格常数基本上与光电导半导体材料的晶格常数匹配，电阻率小于1×10-3欧姆 - 厘米。

公开(公告)号：US5047112A

公开(公告)日：1991-09-10

申请号：US566930

申请日：1990-08-14

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: C30B15/00 ,  C30B15/12

CPC classification number: C30B29/40 ,  C30B15/12 ,  Y10S117/90

Abstract: A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

Abstract translation: 一种使用浮动坩埚系统制造具有高结晶完全性的均匀的单晶III-V三元合金的方法，其中外坩埚保持期望在晶体中生产的组成的三元合金和具有狭窄的内部浮动坩埚 ，其底壁中的熔融通道保持少量熔融的拟二元液相组合物，其将冷冻成所需的晶体组成。 浮动坩埚的合金保持在比外坩埚的合金低的预定温度下，并且将期望的均质合金的单晶从浮坩坩埚熔化出来，当外坩埚的熔体流入底槽 的浮动坩埚以与晶体生长速率相对应的速率。

公开(公告)号：US4217165A

公开(公告)日：1980-08-12

申请号：US901055

申请日：1978-04-28

Applicant: Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch ,  Theodore F. Ciszek

Inventor： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch ,  Theodore F. Ciszek

IPC: C30B15/00 ,  C30B15/26 ,  C30B29/64 ,  B01D9/00 ,  B01J17/18

CPC classification number: C30B15/26 ,  C30B15/00 ,  C30B29/60 ,  Y10S117/90

Abstract: A method of growing a ribbon crystal wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes, characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the width thereof for detecting changes in the intensity of the brightness of said selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.

Abstract translation: 一种生长带状晶体的方法，其中附着到垂直可移动种子的熔融半导体材料的弯液面以基本上等于弯液面冻结速率的速率提升，其特征在于以下步骤：连续感测生长区域的亮度 色带在其宽度上的选定区域中，用于检测所述选择区域的亮度强度的变化，以及响应于用于控制色带几何形状的强度检测到的变化来修改弯月面的温度和拉拔速度。

公开(公告)号：US06984263B2

公开(公告)日：2006-01-10

申请号：US10494482

申请日：2001-11-01

Applicant: Tihu Wang ,  Theodore F. Ciszek

Inventor： Tihu Wang ,  Theodore F. Ciszek

IPC: C30B35/00

CPC classification number: C30B29/06 ,  C30B15/02 ,  C30B15/12 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088

Abstract: In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Abstract translation: 在用于提供切克劳斯基晶体生长工艺的单晶拉制装置中，改进浅熔体坩埚（20），以消除必须提供大量必须预先装入深坩埚中的原料来生长大锭 ，包括具有加深的周边（25）的坩埚的气密容器，以防止浅熔体的咬合并减少湍流的熔融对流; 用于将源材料添加到半导体熔体的源供给装置; 双壁障（23），以最小化加深的周边（25）和生长室中的浅熔体之间的热传递; 在双重屏障（23）中的偏移孔（24），以增加加深的周边（25）和浅生长室之间的熔体移动长度; 和界面加热器/散热器（22），以控制界面形状和晶体生长速率。

公开(公告)号：US5314571A

公开(公告)日：1994-05-24

申请号：US881416

申请日：1992-05-13

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: C30B19/02 ,  H01L21/208 ,  C30B9/04

CPC classification number: H01L21/02532 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02625 ,  H01L21/02628

Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

Abstract translation: 一种用于形成具有小于5×10 16 Cu原子/ cc杂质的器件质量硅的薄晶层的液相外延方法，包括：在约16％至约90％wt的Cu中制备Si的饱和液体溶液熔体。 Si在惰性气体中在约800℃至约1400℃的温度范围内; 将基材浸渍在饱和溶液中; 通过降低饱和溶液熔融物的温度并将浸入溶液熔融物中的基材保持足以使生长的Si沉淀出溶液以在基材上形成Si的结晶层来使该溶液过饱和; 并从溶液中取出底物。

公开(公告)号：US4652332A

公开(公告)日：1987-03-24

申请号：US676343

申请日：1984-11-29

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: C30B15/00 ,  C30B15/10 ,  C30B27/02

CPC classification number: C30B27/02 ,  C30B15/00 ,  C30B15/10 ,  C30B29/46 ,  Y10S117/90

Abstract: A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

Abstract translation: 制备CuInSe 2晶体的方法包括在惰性气体的高压气氛中在坩埚中将化学计量量的Cu，In和Se熔化足量的B2O3，以封装CuInSe 2熔体并将Se限制在坩埚中。 优于化学计量量的1.8至2.2％范围内的附加Se，以弥补该过程中少量的Se损失。 通过将晶种通过B 2 O 3封装物插入与CuInSe 2熔体接触并向上提取种子以使晶体在熔融物上生长，使晶体生长。

公开(公告)号：US4572812A

公开(公告)日：1986-02-25

申请号：US640286

申请日：1984-08-13

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: B22D11/01 ,  B22D11/04 ,  B22D11/041 ,  B22D23/00 ,  B22D23/06 ,  B22D27/02

CPC classification number: B22D27/02 ,  B22D11/001 ,  B22D11/141

Abstract: A method and apparatus is disclosed for casting conductive and semiconduce materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semiconductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

Abstract translation: 公开了用于铸造导电和半导体材料的方法和装置。 该装置包括多个导电构件，其布置成限定具有期望横截面形状的容器状区域。 待铸造的导电或半导体材料的一部分或全部被引入容器状区域。 提供了一种用于诱导每个导电构件中的电流流动的装置，该电流共同作用以引起材料中的电流流动。 通过导电构件的感应电流在与材料中的感应电流基本相反的方向上，使得材料在铸造过程期间被从导电构件排斥。

公开(公告)号：US4304623A

公开(公告)日：1981-12-08

申请号：US171517

申请日：1980-07-23

Applicant: Theodore F. Ciszek

Inventor： Theodore F. Ciszek

IPC: C30B15/34

CPC classification number: C30B15/34 ,  Y10S117/90

Abstract: Method for forming an elongated silicon crystalline body using a specially designed capillary die. The method uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.

Abstract translation: 使用专门设计的毛细管模具形成细长硅晶体的方法。 该方法在生长前沿的中心区域中使用比在前部边缘更高的熔体弯月面。 模具顶表面的边缘与带状横截面不同心。