METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING)
    3.
    发明申请
    METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 有权
    用于在BARC(底部防反射涂层)上进行化学收缩过程的方法

    公开(公告)号:US20080020198A1

    公开(公告)日:2008-01-24

    申请号:US11831137

    申请日:2007-07-31

    IPC分类号: B32B3/26 B05D5/12 C23F1/00

    摘要: A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.

    摘要翻译: 一种结构及其形成方法。 该方法包括提供一种结构,其包括(a)空穴层,(b)在空穴层顶部的BARC(底部抗反射涂层)层,和(c)在BARC层的顶部上的图案化光致抗蚀剂层, 光致抗蚀剂孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层,以在孔层中形成孔。

    Stray light feedback for dose control in semiconductor lithography systems

    公开(公告)号:US20060110666A1

    公开(公告)日:2006-05-25

    申请号:US10995714

    申请日:2004-11-23

    IPC分类号: G03C5/00 G03B27/42

    摘要: A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.

    SYSTEM AND METHOD FOR ELECTRONIC COLLABORATION
    6.
    发明申请
    SYSTEM AND METHOD FOR ELECTRONIC COLLABORATION 审中-公开
    电子协作系统与方法

    公开(公告)号:US20080072334A1

    公开(公告)日:2008-03-20

    申请号:US11856995

    申请日:2007-09-18

    IPC分类号: G06F21/22

    CPC分类号: G06Q10/10

    摘要: A system for providing users with electronic access to multiple electronic collaboration services via a single electronic work center with a single user home page is disclosed that provides routing of users amongst multiple electronic work centers, each with access to a centralized electronic signature service. User information remains accessible from the user's home page while the user accessed functionality in other work centers can be controlled according to the access and authority credentials and rules specified by each third party work center administrator. In addition, electronic signatures can be applied in the work center environment, including via integrated audio and web conferencing with document management. The work center environment can be used to manage an electronic document to be electronically signed by any number of individuals in remote locations, with any of these signings being performed on a single computer in a single location hosted by an independent third.

    摘要翻译: 公开了一种用于通过具有单个用户主页的单个电子工作中心向用户提供对多个电子协作服务的电子访问的系统,其提供多个电子工作中心之间的用户的路由,每个电子工作中心具有对集中式电子签名服务的访问。 用户信息仍然可以从用户主页访问,而用户访问其他工作中心的功能可以根据每个第三方工作中心管理员指定的访问权限凭证和规则进行控制。 此外,电子签名可以在工作中心环境中应用,包括通过集成音频和Web会议与文档管理。 工作中心环境可用于管理由远程位置的任何数量的个人进行电子签名的电子文档,这些签名中的任何一个在由独立第三方托管的单个位置的单个计算机上执行。

    METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING)
    7.
    发明申请
    METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 失效
    用于在BARC(底部防反射涂层)上进行化学收缩过程的方法

    公开(公告)号:US20070010091A1

    公开(公告)日:2007-01-11

    申请号:US11160670

    申请日:2005-07-05

    IPC分类号: H01L21/4763

    摘要: A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.

    摘要翻译: 一种结构及其形成方法。 该方法包括提供一种结构,其包括(a)空穴层,(b)在空穴层顶部的BARC(底部抗反射涂层)层,和(c)在BARC层的顶部上的图案化光致抗蚀剂层, 光致抗蚀剂孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层,以在孔层中形成孔。

    Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
    8.
    发明申请
    Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks 审中-公开
    释放层包括类金刚石碳(DLC)或具有可调组合物的掺杂DLC,用于压印光刻模板和接触掩模

    公开(公告)号:US20060145398A1

    公开(公告)日:2006-07-06

    申请号:US11027473

    申请日:2004-12-30

    IPC分类号: B29C33/60

    摘要: The present invention pertains to disposing a diamond-like composition on a template, wherein the diamond-like composition acts as a release layer. The diamond-like composition is substantially transparent to actinic radiation, e.g., ultraviolet (UV) light, and will also have a desired surface energy, wherein the desired surface energy minimizes adhesion between the template and an underlying material disposed on a substrate. The diamond-like composition is characterized with a low surface energy that exhibits desirable release characteristics.

    摘要翻译: 本发明涉及在模板上设置类金刚石组合物,其中类金刚石组合物用作剥离层。 类金刚石组合物对于光化辐射(例如紫外线(UV))光是基本上透明的,并且还将具有所需的表面能,其中期望的表面能使最小化模板和布置在基底上的下层材料之间的粘合性。 金刚石组合物的特征在于表现出所需释放特性的低表面能。