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34 条记录 (耗时 0.021 秒)

    Method for manufacturing semiconductor device, semiconductor device, and display device
    6.
    发明授权
    Method for manufacturing semiconductor device, semiconductor device, and display device 有权
    半导体器件，半导体器件和显示器件的制造方法

    公开(公告)号：US08823002B2

    公开(公告)日：2014-09-02

    申请号：US13510315

    申请日：2010-08-23

    申请人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    发明人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    IPC分类号： H01L31/036 ,  H01L21/268 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04

    CPC分类号： H01L21/268 ,  H01L27/1229 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

    摘要： An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer (34) with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer (35) on the amorphous silicon layer (34). In the step of irradiating, the amorphous silicon layer (34) is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (34A) including a channel layer for a first TFT (30A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (34B) including a channel layer for a second TFT (30B).

    摘要翻译： 本发明的目的是提供一种半导体器件，其中具有高迁移率的TFT被布置在显示器和外围电路区域中。 根据本发明的半导体器件制造方法包括以下步骤：用能量照射非晶硅层（34），从而获得微晶硅层; 以及在所述非晶硅层（34）上形成掺杂半导体层（35）。 在照射步骤中，用具有第一量的能量照射非晶硅层（34），由此形成包括用于第一TFT（30A）的沟道层的第一微晶硅层（34A），并且还用 具有大于第一量的第二量的能量，由此形成包括用于第二TFT（30B）的沟道层的第二微晶硅层（34B）。

    Thin-film transistor, display device, and manufacturing method for thin-film transistors
    7.
    发明授权
    Thin-film transistor, display device, and manufacturing method for thin-film transistors 有权
    薄膜晶体管，显示装置和薄膜晶体管的制造方法

    公开(公告)号：US08441016B2

    公开(公告)日：2013-05-14

    申请号：US13383077

    申请日：2010-07-08

    申请人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    发明人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    IPC分类号： H01L33/08

    CPC分类号： H01L29/78627 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78624

    摘要： Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (34) that contains a channel region (34C) having a microcrystalline semiconductor; source and drain contact layers (35S and 35D) that contains impurities; a first source metal layer (36S) and a first drain metal layer (36D), and a second source metal layer (37S) and a second drain metal layer (37D). The end portion of the second metal source layer (37S) is located at a position receded from the end portion of the first metal source layer (36S) and the end portion of the second drain metal layer (37D) is located at a position receded from the end portion of the first drain metal layer (36D). The semiconductor layer (34) contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (35S) and drain contact layer (35D).

    摘要翻译： 公开了一种其中泄漏电流最小化的高品质，高效制造的薄膜晶体管。 薄膜晶体管设置有包含具有微晶半导体的沟道区（34C）的半导体层（34） 源极和漏极接触层（35S和35D），其含有杂质; 第一源极金属层（36S）和第一漏极金属层（36D）以及第二源极金属层（37S）和第二漏极金属层（37D）。 第二金属源层（37S）的端部位于从第一金属源层（36S）的端部退出的位置，第二漏极金属层（37D）的端部位于退出的位置 从第一漏极金属层（36D）的端部开始。 半导体层（34）包含在上述源极接触层（35S）和漏极接触层（35D）的端部附近形成的低浓度杂质扩散区域。

    THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME
    8.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20120001190A1

    公开(公告)日：2012-01-05

    申请号：US13259154

    申请日：2010-02-09

    申请人： Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto

    发明人： Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L21/02532 ,  H01L21/02678 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

    摘要： The invention provides a thin film transistor that can improve its operating speed by improving crystallinity near a bottom surface of a channel layer. Of laser light irradiated onto an amorphous silicon layer, light transmitted through the amorphous silicon layer is absorbed by a gate electrode 130 and thereby produces heat. Since the gate electrode 130 is made of a titanium layer 102 with a low thermal conductivity, the produced heat is less likely to be transmitted through a gate wiring line 110 and dissipated and thus increases the temperature of the gate electrode 130. Radiant heat from the gate electrode 130 is provided to a bottom surface of the amorphous silicon layer and thus the amorphous silicon layer is also heated from its bottom surface. As a result, an amorphous silicon layer 106a melts not only from its top surface but also from its bottom surface and is solidified, whereby crystallization proceeds, and thus, the amorphous silicon layer 106a turns into a polycrystalline silicon layer 106b. Hence, the mobility near a bottom surface of the polycrystalline silicon layer 106b also increases, improving the operating speed of a thin film transistor 100.

    摘要翻译： 本发明提供一种薄膜晶体管，其可以通过改善沟道层底表面附近的结晶度来提高其工作速度。 照射到非晶硅层上的激光，透过非晶硅层的光被栅电极130吸收，从而产生热量。 由于栅电极130由具有低热导率的钛层102制成，所产生的热不太可能通过栅极布线110透射并消散，因此增加了栅电极130的温度。来自 栅电极130被提供到非晶硅层的底表面，因此非晶硅层也从其底表面加热。 结果，非晶硅层106a不仅从其顶表面而且从其底表面熔化并且固化，从而进行结晶，因此非晶硅层106a变成多晶硅层106b。 因此，多晶硅层106b的底表面附近的迁移率也增加，提高了薄膜晶体管100的工作速度。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 有权
    用于制造半导体器件，半导体器件和显示器件的方法

    公开(公告)号：US20120228621A1

    公开(公告)日：2012-09-13

    申请号：US13510315

    申请日：2010-08-23

    申请人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    发明人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L21/268 ,  H01L27/1229 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

    摘要： An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer (34) with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer (35) on the amorphous silicon layer (34). In the step of irradiating, the amorphous silicon layer (34) is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (34A) including a channel layer for a first TFT (30A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (34B) including a channel layer for a second TFT (30B).

    摘要翻译： 本发明的目的是提供一种半导体器件，其中具有高迁移率的TFT被布置在显示器和外围电路区域中。 根据本发明的半导体器件制造方法包括以下步骤：用能量照射非晶硅层（34），从而获得微晶硅层; 以及在所述非晶硅层（34）上形成掺杂半导体层（35）。 在照射步骤中，用具有第一量的能量照射非晶硅层（34），由此形成包括用于第一TFT（30A）的沟道层的第一微晶硅层（34A），并且还用 具有大于第一量的第二量的能量，由此形成包括用于第二TFT（30B）的沟道层的第二微晶硅层（34B）。