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    Process and apparatus for integrating sheet resistance measurements and reflectance measurements of a thin film in a common apparatus
    2.
    发明授权
    Process and apparatus for integrating sheet resistance measurements and reflectance measurements of a thin film in a common apparatus 有权
    用于在普通设备中集成薄膜电阻测量和薄膜反射测量的方法和装置

    公开(公告)号：US07050160B1

    公开(公告)日：2006-05-23

    申请号：US10407669

    申请日：2003-04-03

    申请人： Walter H. Johnson ,  Jagadish Kalyanam ,  Shankar Krishnan ,  Murali K. Narasimhan

    发明人： Walter H. Johnson ,  Jagadish Kalyanam ,  Shankar Krishnan ,  Murali K. Narasimhan

    IPC分类号： G01N21/00

    CPC分类号： G01N21/8422 ,  G01B7/06 ,  G01B11/0625 ,  G01N21/55

    摘要： A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially. By deriving the resistivity of the thin film from the measured reflectance at any particular region of the thin film surface, the thickness of the thin film, at that region of the film, may be obtained by dividing the derived resistivity by the measured sheet resistance for that same region.

    摘要翻译： 用于在公共装置中测量诸如金属膜或掺杂半导体的薄膜的反射率和薄层电阻的方法包括：将来自辐射源的辐射束引导到公共装置上的表面的一部分上 感测从薄膜表面反射的辐射量，并且在薄膜表面的与或相邻的薄膜的表面的一部分处的薄膜电阻测量装置接触薄膜表面 到由辐射束接触的薄膜的部分以测量薄膜的薄层电阻。 作为示例，薄层电阻测量装置可以包括4点探针或涡流测量装置。 相应的测量可以同时或顺序地进行。 通过从薄膜表面的任何特定区域处的测量的反射率导出薄膜的电阻率，可以通过将导电电阻率除以测得的薄层电阻值来获得薄膜的该薄膜的该区域的厚度 同一地区。

    Programmable autopilot system for autonomous flight of unmanned aerial vehicles
    5.
    发明授权
    Programmable autopilot system for autonomous flight of unmanned aerial vehicles 有权
    可编程自动驾驶仪系统，用于自主驾驶无人机

    公开(公告)号：US07302316B2

    公开(公告)日：2007-11-27

    申请号：US10940411

    申请日：2004-09-14

    申请人： Randal W. Beard ,  Walter H. Johnson ,  Reed Christiansen ,  Joshua M. Hintze ,  Timothy W. McLain

    发明人： Randal W. Beard ,  Walter H. Johnson ,  Reed Christiansen ,  Joshua M. Hintze ,  Timothy W. McLain

    IPC分类号： B64C1/00

    CPC分类号： G01C23/005 ,  B64C2201/141 ,  G05D1/101

    摘要： A system and method for providing autonomous control of unmanned aerial vehicles (UAVs) is disclosed. The system includes a ground station in communication with an unmanned aerial vehicle. The method for providing autonomous control of a UAV includes methods for processing communications between the ground station and UAV. The method also includes procedures for processing commands from the ground station. Also included in the method is a process for estimating the attitude of the UAV and autonomously maintaining its altitude within a desired threshold. The method also includes a process for autonomously orbiting about a specified point in space. Combined with these processes, the method also includes a process for an autonomous takeoff and landing of the UAV.

    摘要翻译： 公开了一种提供无人机（UAV）自主控制的系统和方法。 该系统包括与无人驾驶飞行器通信的地面站。 提供无人机的自主控制的方法包括处理地面站和无人机之间的通信的方法。 该方法还包括用于处理来自地面站的命令的程序。 还包括在该方法中的是用于估计UAV的姿态并且将其高度自主地保持在期望阈值内的过程。 该方法还包括围绕空间中的特定点自主绕轨的过程。 结合这些过程，该方法还包括用于UAV的自主起飞和着陆的过程。

    Systems and methods for measuring properties of conductive layers
    6.
    发明授权
    Systems and methods for measuring properties of conductive layers 有权
    用于测量导电层性质的系统和方法

    公开(公告)号：US06815959B2

    公开(公告)日：2004-11-09

    申请号：US10119377

    申请日：2002-04-09

    申请人： Walter H. Johnson ,  Torsten Borchers ,  Daniel Griffing ,  Andrei Danet ,  George Erskine

    发明人： Walter H. Johnson ,  Torsten Borchers ,  Daniel Griffing ,  Andrei Danet ,  George Erskine

    IPC分类号： G01R2708

    CPC分类号： G01R1/06733 ,  G01R1/06711 ,  G01R27/14 ,  G01R31/2831

    摘要： A pin configured to be disposed within a probe is provided. The probe may be configured to measure a property of a conductive layer. The pin may include a contact surface which may be substantially planar. The pin may also include a first portion extending from the contact surface. A cross-sectional area of the first portion, in a direction substantially parallel to the contact surface, may be substantially equal to a surface area of the contact surface across a length of the first portion. A system configured to measure a property of a conductive layer is also provided. The system may include a mounting device and at least two probes coupled to the mounting device. The probes may be configured to measure the property of a conductive layer. In addition, the mounting device may be configured such that one of the probes may contact the conductive layer during measurement.

    摘要翻译： 提供了构造成设置在探针内的引脚。 探针可以被配置为测量导电层的性质。 销可以包括可以是基本上平面的接触表面。 销还可以包括从接触表面延伸的第一部分。 在基本上平行于接触表面的方向上的第一部分的横截面积可以基本上等于穿过第一部分的长度的接触表面的表面积。 还提供了一种被配置为测量导电层性质的系统。 该系统可以包括安装装置和耦合到安装装置的至少两个探针。 探针可以被配置成测量导电层的性质。 此外，安装装置可以被配置成使得在测量期间探针中的一个可以接触导电层。

    Semiconductor surface resistivity probe with semiconductor temperature control
    7.
    发明授权
    Semiconductor surface resistivity probe with semiconductor temperature control 失效
    半导体表面电阻率探头具有半导体温度控制

    公开(公告)号：US5260668A

    公开(公告)日：1993-11-09

    申请号：US897459

    申请日：1992-06-11

    申请人： Chester L. Mallory ,  Walter H. Johnson ,  Wayne K. Borglum

    发明人： Chester L. Mallory ,  Walter H. Johnson ,  Wayne K. Borglum

    IPC分类号： G01N27/04 ,  G01R27/00 ,  G01R27/08 ,  G01N27/14

    CPC分类号： G01N27/041 ,  G01R27/00

    摘要： The resistivity of the surface of a semiconductor wafer is measured at different temperatures to determine the resistivity as a function of temperature. The temperature of the semiconductor wafer is varied by a heater in thermal contact with the semiconductor wafer, and the temperature is measured by a temperature sensor in thermal contact with the semiconductor. The heater is controlled by a control unit which adjusts the amount of heat provided by the heater, thereby controlling the temperature at which a measurement from a four-point resistivity probe is taken.

    摘要翻译： 在不同的温度下测量半导体晶片表面的电阻率，以确定作为温度的函数的电阻率。 通过与半导体晶片热接触的加热器来改变半导体晶片的温度，并且通过与半导体热接触的温度传感器来测量温度。 加热器由调节由加热器提供的热量的控制单元控制，从而控制从四点电阻率探头测量的温度。