公开(公告)号：US07050160B1

公开(公告)日：2006-05-23

申请号：US10407669

申请日：2003-04-03

申请人： Walter H. Johnson ,  Jagadish Kalyanam ,  Shankar Krishnan ,  Murali K. Narasimhan

发明人： Walter H. Johnson ,  Jagadish Kalyanam ,  Shankar Krishnan ,  Murali K. Narasimhan

IPC分类号： G01N21/00

CPC分类号： G01N21/8422 ,  G01B7/06 ,  G01B11/0625 ,  G01N21/55

摘要： A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially. By deriving the resistivity of the thin film from the measured reflectance at any particular region of the thin film surface, the thickness of the thin film, at that region of the film, may be obtained by dividing the derived resistivity by the measured sheet resistance for that same region.

摘要翻译： 用于在公共装置中测量诸如金属膜或掺杂半导体的薄膜的反射率和薄层电阻的方法包括：将来自辐射源的辐射束引导到公共装置上的表面的一部分上 感测从薄膜表面反射的辐射量，并且在薄膜表面的与或相邻的薄膜的表面的一部分处的薄膜电阻测量装置接触薄膜表面 到由辐射束接触的薄膜的部分以测量薄膜的薄层电阻。 作为示例，薄层电阻测量装置可以包括4点探针或涡流测量装置。 相应的测量可以同时或顺序地进行。 通过从薄膜表面的任何特定区域处的测量的反射率导出薄膜的电阻率，可以通过将导电电阻率除以测得的薄层电阻值来获得薄膜的该薄膜的该区域的厚度 同一地区。

公开(公告)号：US06475902B1

公开(公告)日：2002-11-05

申请号：US09522635

申请日：2000-03-10

申请人： Gilbert Hausmann ,  Vijay Parkhe ,  Jagadish Kalyanam

发明人： Gilbert Hausmann ,  Vijay Parkhe ,  Jagadish Kalyanam

IPC分类号： H01L214763

CPC分类号： H01L21/76856 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874

摘要： A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR′)5, the formula (NRR′)3Nb═NR″, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.

摘要翻译： 通过分解有机金属前体而形成的金属氮化物材料的方法，该有机金属前体可用作用于使用导电金属的集成电路的阻挡层。 更具体地，本发明提供了一种在用于铜金属化的基板上沉积氮化铌层的方法。 在本发明的一个方面，将具有式Nb（NRR'）5，式（NRR'）3 Nb = NR“的有机金属前体或其组合在处理气体的存在下引入处理室， 作为氨，并且金属氮化物膜通过在基底上的前体的热或等离子体增强的分解而沉积。 然后将沉积的氮化铌层暴露于等离子体以除去污染物，降低膜的电阻率并使膜致密化。

公开(公告)号：US06743473B1

公开(公告)日：2004-06-01

申请号：US09505638

申请日：2000-02-16

申请人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

发明人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

IPC分类号： C23C1606

CPC分类号： H01L21/76843 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45561 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76862

摘要： The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R)n)xMHy−x, where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited. The deposited metal or metal nitride film may then be exposed to a plasma to remove contaminants, densify the film, and reduce film resistivity.

摘要翻译： 本发明提供了通过化学气相沉积在基板上形成金属和/或金属氮化物层的方法和前体。 有机金属前体具有式（Cp（R）n）xMHy-x，其中Cp是环戊二烯基官能团，R是包含具有至少一个碳 - 硅键的有机基团的环戊二烯基官能团上的取代基，n是 0至5的整数，x是1至4的整数，M是金属，y是金属M的化合价。金属，金属氮化物，金属氮化物或金属氮化硅膜沉积在 在低于约20托的压力下，在加工气体例如氢气，氮气，氨，硅烷及其组合的存在下，通过热或等离子体增强分解有机金属前体来加热衬底。 通过控制反应性气体组成，可以沉积金属或金属氮化物膜。 然后将沉积的金属或金属氮化物膜暴露于等离子体以除去污染物，使膜致密化并降低膜电阻率。

公开(公告)号：US06491978B1

公开(公告)日：2002-12-10

申请号：US09612854

申请日：2000-07-10

申请人： Jagadish Kalyanam

发明人： Jagadish Kalyanam

IPC分类号： C23C1616

CPC分类号： H01L21/76843 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/67069 ,  H01L21/76856 ,  H01L21/76862

摘要： A method and apparatus for depositing a metal and/or metal nitride layer on a substrate by the thermal or plasma enhanced disassociation of an organometallic precursor having the formula of (Cp(R)n)xM(CO)y−x, in the presence of a processing gas, such as argon, hydrogen, or ammonia. In one embodiment the metal or metal nitride film is deposited at a pressure of less than about 20 Torr. The deposited metal or metal nitride layer may then be exposed to a plasma to remove contaminants, densify the layer, and reduce layer resistivity. The layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

摘要翻译： 一种通过在具有式（Cp（R）n）xM（CO）yx的有机金属前体的热或等离子体增强的分离作用下在金属和/或金属氮化物层上沉积金属和/或金属氮化物层的方法和装置， 处理气体，如氩气，氢气或氨气。 在一个实施例中，在小于约20托的压力下沉积金属或金属氮化物膜。 然后可以将沉积的金属或金属氮化物层暴露于等离子体以除去污染物，使层致密，并降低层电阻率。 该层可用作在集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。